A. Koizumi, Y. Fujiwara, K. Inoue, A. Urakami, T. Yoshikane and Y. Takeda:
"Room-temperature 1.54 µm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy"
Japanese Journal of Applied Physics 42(4B) (2003) pp. 2223-2225.
I. Yamakawa, T. Yamauchi, R. Oga, Y. Fujiwara, Y. Takeda and A. Nakamura:
"Cross-sectional scanning tunneling microscopy study of interfacial roughness in an InGaAs/InP multiple quantum well structure grown by metalorganic vapor phase epitaxy"
Japanese Journal of Applied Physics 42(4A) (2003) pp. 1548-1551.
T. Akane, S. Jinno, Y. Yang, T. Hirata, T. Kuno, Y. Isogai, N. Watanabe, Y. Fujiwara, A. Nakamura and Y. Takeda:
"AFM observation of OMVPE-grown ErP on InP substrates using a new organometal Er(EtCp)3"
Applied Surface Science 216 (2003) pp. 537-541.
A. Koizumi, Y. Fujiwara, K. Inoue, T. Yoshikane, A. Urakami and Y. Takeda:
"Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy"
Applied Surface Science 216 (2003) pp. 560-563.
Y. Fujiwara, Y. Nonogaki, R. Oga, A. Koizumi and Y. Takeda:
"Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy"
Applied Surface Science 216 (2003) pp. 564-568.
R. Oga, W.-S. Lee, Y. Yoshida, Y. Fujiwara and Y. Takeda:
"White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heter-epitaxy"
Applied Physics Letters 82(25) (2003) pp. 4546-4548.
A. Koizumi, Y. Fujiwara, A. Urakami, K. Inoue, T. Yoshikane and Y. Takeda:
"Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light emitting diodes grown by organometallic vapor phase epitaxy"
Applied Physics Letters 83(22) (2003) pp. 4521-4523.
Y. Fujiwara, A. Koizumi, A. Urakami, T. Yoshikane, K. Inoue and Y. Takeda:
"Room-temperature 1.5 µm electroluminescence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy"
Materials Science and Engineering B 105(1-3) (2003) pp. 57-60.
Y. Fujiwara, A. Koizumi, K. Inoue, A. Urakami, T. Yoshikane and Y. Takeda:
"Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy"
Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications, Vol. 744, edited by B.D. Weaver, M.O. Manasreh, C.C. Jagadish and S. Zollner (Materials Research Society, Pittsburgh, 2003) pp. 149-154.
A. Koizumi, Y. Fujiwara, A. Urakami, K. Inoue, T. Yoshikane and Y. Takeda:
"Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O /GaInP DH structure light-emitting diodes"
Physica B 340-342 (2003) pp. 309-314.
T. Kuno, T. Akane, S. Jinno, T. Hirata, Y. Yang, Y. Isogai, N. Watanabe, Y. Fujiwara, A. Nakamura and Y. Takeda:
"AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates"
Materials Science in Semiconductor Processing 6 (2003) pp. 461-464.
H. Ofuchi, T. Akane, S. Jinno, Y. Yang, N. Kuno, T. Hirata, M. Tabuchi, Y. Fujiwara, and Y. Takeda:
"Fluorescence EXAFS analysis for ErP grown on by organometallic vapor phase epitaxy using a new organometal Er(EtCp)3"
Materials Science in Semiconductor Processing 6 (2003) pp. 469-472.
T. Hirata, T. Akane, S. Jinno, T. Kuno, Y. Yang, Y. Fujiwara, A. Nakamura and Y. Takeda:
"SEM observation of overgrown InP on ErP/InP (001), InP (111)A, and InP (111)B"
Materials Science in Semiconductor Processing 6 (2003) pp. 473-476.
R. Oga, W.-S. Lee, Y. Yoshida, Y. Fujiwara and Y. Takeda:
"Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy"
Materials Science in Semiconductor Processing 6 (2003) pp. 477-480.
Y. Fujiwara, A. Koizumi and Y. Takeda:
"Room temperature 1.5 mm electroluminescence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy",
2003 European Materials Research Society Spring Meeting, J-III.5, Strasbourg, France, June 10-13 (2003).
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A. Koizumi, Y. Fujiwara, A. Urakami, K. Inoue, T. Yoshikane and Y. Takeda:
"Effects of GaAs:Er,O active layer thickness on luminescence properties of GaInP/Er,O-codoped GaAs/GaInP injection-type double heterostructure light-emitting diodes"
22nd International Conference on Defects in Semiconductors (ICDS-22), Aarhus, Denmark, C1, July 28-August 1 (2003).
R. Oga, W.-S. Lee, Y. Fujiwara and Y. Takeda:
"Extremely broad infrared light source from InAs quantum dots grown on InP (001) substrates by droplet heteroepitaxy"
28th International Conference on Infrared and Milimeter Waves (ICIMW28), Otsu, Japan, PD-4, September 29-October 3 (2003).
W.-S. Lee, R. Oga, Y. Yoshida, Y. Fujiwara and Y. Takeda:
"Formation of InAs quantum dots by droplet hetero-epitaxy on GaInAsP and AlInAs lattice-matched with InP substrates"
7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, 17P012Y, November 16-20 (2003).
Y. Yoshida, R. Oga, W.-S. Lee, Y. Fujiwara and Y. Takeda:
"Fabrication of InAs quantum dots by droplet hetero-epitaxy on periodic arrays of InP nanopyramids"
7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, 17P013Y, November 16-20 (2003).
T. Yoshikane, A. Koizumi, S. Hisadome, M. Tabuchi, Y. Fujiwara, A. Urakami, K. Inoue and Y. Takeda:
"Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE"
7th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, 17P029Y, November 16-20 (2003).