S. Fuchi, Y. Nonogaki, H. Moriya, A. Koizumi, Y. Fujiwara and Y. Takeda:
"Composition dependence of energy structure and lattice structure in InGaAs/GaP"
Physica E 21 (2004) pp.36-44.
I. Yamakawa, R. Oga, Y. Fujiwara, Y. Takeda and A. Nakamura:
"Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum well"
Applied Physics Letters 84(22) (2004) pp. 4436-4438.
Y. Yoshida, R. Oga, W.-S. Lee, Y. Fujiwara and Y. Takeda:
"Fabrication of InAs quantum dots by droplet hetero-epitaxy on periodic arrays of InP nanopyramids"
Thin Solid Films 464-465 (2004) pp. 240-243.
T. Yoshikane, A. Koizumi, S. Hisadome, M. Tabuchi, Y. Fujiwara, A. Urakami, K. Inoue and Y. Takeda:
"Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE"
Applied Surface Science 237 (2004) pp. 246-250.
M. Yoshida, K. Hiraka, H. Ohta, Y. Fujiwara, A. Koizumi and Y. Takeda:
"Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy"
Journal of Applied Physics 96(8) (2004) pp. 4189-4196.
Z. Zhou, T. Komaki, A. Koizumi, T. Komori, M. Yoshino, M. Morinaga, Y. Fujiwara and Y. Takeda:
"Photoluminescence around 1.54 µm from Er-containing ZnO at room temperature"
Materials Transactions 45(7) (2004) pp. 2003-2007.
M. Yoshida, K. Hiraka, H. Ohta, A. Koizumi, Y, Fujiwara and Y. Takeda:
"ESR study of Zn codoping effect on the luminescence efficiency of the Er-2O center in GaAs:Er,O"
27th International Conference on Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, USA, 76, July 26-30 (2004).
M. Suzuki, M. Tonouchi, A. Koizumi, Y. Takeda, K. Nakamura and Y. Fujiwara:
"Terahertz radiation from Er,O-codoped GaAs surface"
27th International Conference on Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, USA, 211, July 26-30 (2004).
Y. Fujiwara, K. Nakamura, A. Koizumi, Y. Takeda, M. Suzuki and M. Tonouchi:
"Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs"
27th International Conference on Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, USA, 222, July 26-30 (2004).
Y. Fujiwara, A. Koizumi, K. Nakamura, M. Suzuki, Y. Takeda and M. Tonouchi:
"Behaviors of nonequilibrium carriers in Er,O-codoped GaAs for 1.5mm light-emitting devices with extremely stable wavelength"
International Symposium on Advanced Structural and Functional Materials Design (ISASFMD), Osaka, Japan, A105,¡¡November 10-12 (2004).
K. Nakamura, M. Suzuki, A. Koizumi, Y. Takeda, M. Tonouchi and Y. Fujiwara:
"Pump and probe reflectance study on photoexcited carrier dynamics in Er,O-codoped GaAs"
23rd Electronic Materials Symposium, H14, pp. 233-234¡¢¥Û¥Æ¥ëÉٻθ«¥Ï¥¤¥Ä¡¢°ËƦĹ²¬¡¢7·î7-9Æü (2004).