M. Yoshida, K. Hiraka, H. Ohta, Y. Fujiwara, A. Koizumi and Y. Takeda:
"Electron spin resonance study of Zn-codoping effect on local structure of the Er-related centers in GaAs:Er,O"
Journal of Applied Physics 97(2) (2005) pp. 023909-1-4.
Z. Zhou, N. Sato, T. Komaki, A. Koizumi, T. Komori, M. Morinaga, Y. Fujiwara and Y. Takeda:
"Effects of S-doping and subsequent annealing on photoluminescence around 1.54 µm from Er-containing ZnO"
Materials Science Forum 475-479 (2005) pp. 1125-1128.
M. Yoshida, K. Hiraka, H. Ohta, A. Koizumi, Y. Fujiwara and Y. Takeda:
"ESR study of Zn codoping effect on the luminescence efficiency of the Er-2O center in GaAs:Er,O"
Physics of Semiconductors, AIP Conference Proceedings, Vol. 772, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005) pp.121-122.
M. Suzuki, M. Tonouchi, A. Koizumi, Y. Takeda, K. Nakamura and Y. Fujiwara:
"Terahertz radiation from Er,O-codoped GaAs surface"
Physics of Semiconductors, AIP Conference Proceedings, Vol. 772, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005) pp. 131-132.
Y. Fujiwara, K. Nakamura, A. Koizumi, Y. Takeda, M. Suzuki and M. Tonouchi:
"Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs"
Physics of Semiconductors, AIP Conference Proceedings, Vol. 772, edited by J. Menendez and C. G. Van de Walle (AIP, New York, 2005) pp. 139-140.
Y. Fujiwara, K. Nakamura, S. Takemoto, Y. Terai, M. Suzuki, A. Koizumi, Y. Takeda and M. Tonouchi:
"Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique"
Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications, edited by T. Gregorkiewicz, Y. Fujiwara, M. Lipson and J. M. Zavada (Materials Research Society, Pittsburgh, 2005) pp. 79-83.
Y. Fujiwara:
"Room-temperature operation of injection-type 1.5 µm light-emitting diodes with Er,O-codoped GaAs"
Materials Transactions 46(9) (2005) pp. 1969-1974.
Y. Fujiwara, A. Koizumi, K. Nakamura, M. Suzuki, Y. Takeda and M. Tonouchi:
"Behaviors of nonequilibrium carriers in Er,O-codoped GaAs for 1.5 µm light-emitting devices with extremely stable wavelength"
Materials Science Forum 512 (2005) pp. 159-164.
Y. Terai, Y. Maeda, K. Akiyama and Y. Fujiwara:
"Investigation of β-FeSi2/Si heterostructures by photoluminescence with different optical configurations"
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (SSDM2005, Kobe, Japan, September 13-15, 2005) pp. 330-331.
Y. Fujiwara, K. Nakamura, S. Takemoto, A. Koizumi, M. Suzuki, Y. Takeda and M. Tonouchi:
"Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique"
2005 Materials Research Society Spring Meeting, San Francisco, USA, V3.7, March 28-April 1 (2005).
Y. Fujiwara, T. Tokuno, H. Ichida, A. Koizumi, Y. Takeda and Y. Kanematsu:
"Excitation cross section of Er-2O luminescent center in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy"
2005 European Materials Research Society Spring Meeting, C-I.02, Strasbourg, France, May 31-June 3 (2005).
A. Mishina, T. Akahori, I. Yamauchi and Y. Fujiwara:
"Growth of bulk b-FeSi2 crystals by annealing of well aligned solidification structures"
23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, TuP.43, July 25-29 (2005).
Y. Terai, Y. Maeda and Y. Fujiwara:
"Photoluminescence enhancement of beta-FeSi2 crystals by optimizing Al doping concentration"
23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, TuP.70, July 25-29 (2005).
K. Nakamura, S. Takemoto, Y. Terai, M. Suzuki, A. Koizumi, Y. Takeda, M. Tonouchi and Y. Fujiwara:
"Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs"
23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, WeM2.2C, July 25-29 (2005).
K. Yamaoka, Y. Yoshizako, H. Kato, D. Tsukiyama, Y. Terai and Y. Fujiwara:
"Room-temperature plasma-enhanced chemical vapor deposition of stable SiOCH films using tetraethoxysilane"
23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, ThP.5, July 25-29 (2005).
Y. Fujiwara, M. Yoshida, T. Terao, A. Koizumi, H. Ohta, Y. Takeda and N. Fujimura:
"Anomalous magnetic behaviors of Er ions in Er,O-codoped GaAs"
Third International School and Conference on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan, P12, August 1-5 (2005).
Y. Terai, Y. Maeda, K. Akiyama and Y. Fujiwara:
"Investigation of b-FeSi2/Si heterostructures by photoluminescence with different optical configurations"
2005 International Conference on Solid State Devices and Materials (SSDM2005), E-4-3, Kobe, Japan, September 13-15 (2005).
S. Takemoto, K. Nakamura, Y. Terai, M. Suzuki, A. Koizumi, Y. Takeda, M. Tonouchi and Y. Fujiwara:
"Ultrafast trapping processes of photoexcited carriers in Er,O-codoped GaAs"
24th Electronic Materials Symposium, I4, pp. 191-192¡¢¥á¥ë¥Ñ¥ë¥¯¾¾»³¡¢¾¾»³»Ô¡¢7·î4-6Æü (2005).
K. Yamaoka, Y. Yoshizako, H. Kato, D. Tsukiyama, Y. Terai and Y. Fujiwara:
"Plasma-enhanced chemical vapor deposition of SiOCH films at room temperature using TEOS"
24th Electronic Materials Symposium, G12, pp. 157-158¡¢¥á¥ë¥Ñ¥ë¥¯¾¾»³¡¢¾¾»³»Ô¡¢7·î4-6Æü (2005).
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"PECVD¤Ë¤è¤ëSi·Ï»À²½Ëì¤Î¼¼²¹À®Ëì¤È¥×¥é¥º¥Þ¿ÇÃÇ/Plasma diagnosis of PECVD for the SiOCH deposition at room temperature"
Âè16²óÆüËÜMRS³Ø½Ñ¥·¥ó¥Ý¥¸¥¦¥à, H1-P02-D¡¢ÆüËÜÂç³Ø¡¢ÅìµþÅÔÀéÂåÅĶ衢12·î10Æü (2005).
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"TEOS¤òÍѤ¤¤¿¥×¥é¥º¥ÞCVDË¡¤Ë¤è¤ê¼¼²¹ºîÀ½¤·¤¿SiOCHËì¤Î¹½Â¤¤ª¤è¤ÓÅŵ¤ÅªÉ¾²Á/Structural and electrical properties of SiOCH films deposited by room-temperature PECVD using TEOS"
Âè16²óÆüËÜMRS³Ø½Ñ¥·¥ó¥Ý¥¸¥¦¥à, H1-O02-M¡¢ÆüËÜÂç³Ø¡¢ÅìµþÅÔÀéÂåÅĶ衢12·î10Æü (2005).
T. Gregorkiewicz, Y. Fujiwara, M. Lipson and J. M. Zavada:
Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications, Vol. 866 (Materials Research Society, Pittsburgh, 2005).