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ºàÎÁ 55(2) (2006) pp. 148-152.
K. Yamaoka, Y. Yoshizako, H. Kato, D. Tsukiyama, Y. Terai and Y. Fujiwara:
"Room-temperature plasma-enhanced chemical vapor deposition of stable SiOCH films using tetraethoxysilane"
Physica B 376-377 (2006) pp. 399-402.
K. Nakamura, S. Takemoto, Y. Terai, M. Suzuki, A. Koizumi, Y. Takeda, M. Tonouchi and Y. Fujiwara:
"Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs"
Physica B 376-377 (2006) pp. 556-559.
A. Mishina, T. Akahori, Y. Terai, I. Yamauchi and Y. Fujiwara:
"Growth of bulk β-FeSi2 crystals by annealing of well aligned solidification structures"
Physica B 376-377 (2006) pp. 795-798.
Y. Terai, Y. Maeda and Y. Fujiwara:
"Photoluminescence enhancement of β-FeSi2 crystals by optimizing Al doping concentration"
Physica B 376-377 (2006) pp. 799-802.
K. Yamaoka, Y. Yoshizako, H. Kato, D. Tsukiyama, Y. Terai and Y. Fujiwara:
"Thermal stability of SiOCH films deposited by room-temperature plasma-enhanced Chemical vapor deposition using tetraethoxysilane"
Transactions of the Materials Research Society of Japan 31(2) (2006) pp. 495-498.
Y. Yoshizako, D. Tsukiyama, D. Nakamura, K. Yamaoka, Y. Terai and Y. Fujiwara:
"Plasma diagnosis of remote PECVD for SiOCH deposition at low temperature"
Transactions of the Materials Research Society of Japan 31(2) (2006) pp. 499-502.
S. Takemoto, T. Terao, Y. Terai, M. Yoshida, A. Koizumi, H. Ohta, Y. Takeda, N. Fujimura and Y. Fujiwara:
"Magnetic properties of Er,O-codoped GaAs at low temperature"
Physica Status Solidi (c) 3(12) (2006) pp. 4082-4085.
Y. Terai, Y. Maeda and Y. Fujiwara:
"Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface"
Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42.
K. Yamaoka, D. Tsukiyama, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Room-temperature growth of silicon oxide films by plasma-enhanced chemical vapor deposition"
Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-83-3-86.
K. Yamaoka, H. Kato, D. Tsukiyama, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Thermally stable carbon-doped silicon oxide films deposited at room temperature"
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials (Yokohama, Japan, September 12-15, 2006).
N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake:
"Characterization of epitaxial silicon films grown by atmosheric pressure plasma chemical vapor deposition at low temperatures (450-600oC)"
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials (Yokohama, Japan, September 12-15, 2006) pp. 1094-1095.
N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake:
"Characterization of epitaxial Si films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition"
Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology (Osaka, Japan, October 19-20, 2006) pp. 69-70.
Y. Fujiwara, K. Nakamura, S. Takemoto, J. Sugino, Y. Terai, M. Suzuki and M. Tonouchi:
"Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique"
28th International Conference on Physics of Semiconductors (ICPS-28), FrM2g.33, Vienna, Austria, July 24-28 (2006).
Y. Terai, Y. Maeda and Y. Fujiwara:
"Nondestructive investigation of b-FeSi2/Si interface by photoluminescence measurements"
Asia-Pacific Conference on Semiconducting Silicides: Science and Technology towards Sustainable Optoelectronics (APAC-SILICIDE 2006), B-2, Kyoto, Japan, July 29-31 (2006).
Y. Terai, A. Mishina, I. Yamauchi and Y. Fujiwara:
"Growth of bulk b-FeSi2 by peritectoid reaction of faceted e-FeSi and a-Fe2Si5 single crystals"
Asia-Pacific Conference on Semiconducting Silicides: Science and Technology towards Sustainable Optoelectronics (APAC-SILICIDE 2006), D-4, Kyoto, Japan, July 29-31 (2006).
T. Tokuno, H. Ichida, Y. Terai, Y. Kanematsu and Y. Fujiwara:
"Oxygen concentration dependence of photoluminescence properties in Er, O-codoped GaAs"
International Symposium on Design of Advanced Materials Using Nano Space (ISDAM-2006), P-34, Osaka, Japan, August 4 (2006).
K. Yamaoka, H. Kato, D. Tsukiyama, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Electrical properties of carbon-doped silicon oxide films deposited using TEOS at room temperature"
International Symposium on Design of Advanced Materials Using Nano Space (ISDAM-2006), P-71, Osaka, Japan, August 4 (2006).
S. Takemoto, T. Terao, Y.Terai, M. Yoshida, A. Koizumi, H. Ohta, Y. Takeda, N. Fujimura and Y. Fujiwara:
"Magnetic properties of Er,O-codoped GaAs at low temperature"
4th International Conference on Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-IV), PB-43, Sendai, Japan, August 15-18 (2006).
Y. Terai, Y. Maeda and Y. Fujiwara:
"Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface"
International Workshop on Sustainable Energy and Materials (IWSEM2006), 3-3-3, Tokyo, Japan, September 5 (2006).
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K. Yamaoka, D. Tsukiyama, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Room-temperature growth of silicon oxide films by plasma-enhanced chemical vapor deposition"
International Workshop on Sustainable Energy and Materials (IWSEM2006), 3-p-7, Tokyo, Japan, September 5 (2006).
K. Yamaoka, H. Kato, D. Tsukiyama, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Thermally stable carbon-doped silicon oxide films deposited at room temperature"
2006 International Conference on Solid State Devices and Materials (SSDM 2006), P-2-3, Yokohama, Japan, September 12-15 (2006).
N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake:
"Characterization of epitaxial silicon films grown by atmosheric pressure plasma chemical vapor deposition at low temperatures (450-600°C)"
2006 International Conference on Solid State Devices and Materials (SSDM 2006), I-8-4, Yokohama, Japan, September 12-15 (2006).
N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake:
"Characterization of epitaxial Si films grown at low temperatures by atmospheric pressure plasma chemical vapor deposition"
International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, October 19-20 (2006).
Y. Fujiwara, S. Takemoto, T. Tokuno, K. Hidaka, H. Ichida, M. Suzuki, Y. Terai, Y. Kanematsu and M. Tonouchi:
"Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5mm light-emitting devices with extremely stable wavelength"
2nd Workshop on Impurity Based Electroluminescence Devices and Materials (IBEDM 2006), F-17, Wakayama, Japan, October 17-20 (2006).
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K. Hidaka, T. Hiramatsu, Y. Terai and Y. Fujiwara:
"Photoluminescence properties of Er,O-codoped GaAs grown by organometallic vapor phase epitaxy using Er(DPM)3"
25th Electronic Materials Symposium, A4, pp. 10-11¡¢¥Û¥Æ¥ë¥µ¥ó¥Ð¥ì¡¼Éٻθ«¡¢°ËƦ¤Î¹ñ»Ô¡¢7·î5Æü (2006).
S. Takemoto, K. Nakamura, K. Hidaka, Y. Terai, M. Suzuki, M. Tonouchi and Y. Fujiwara:
"Ultrafast relaxation process of photoexcited carriers in Er-doped GaAs"
25th Electronic Materials Symposium, A5, pp. 12-13¡¢¥Û¥Æ¥ë¥µ¥ó¥Ð¥ì¡¼Éٻθ«¡¢°ËƦ¤Î¹ñ»Ô¡¢7·î5Æü (2006).
T. Tokuno, S. Kawamura, H. Ichida, Y. Terai, A. Koizumi, Y. Takeda, Y. Kanematsu and Y. Fujiwara:
"Oxygen concentration dependence of Er optical excitation cross section in Er,O-codoped GaAs"
25th Electronic Materials Symposium, A6, pp. 14-15¡¢¥Û¥Æ¥ë¥µ¥ó¥Ð¥ì¡¼Éٻθ«¡¢°ËƦ¤Î¹ñ»Ô¡¢7·î5Æü (2006).
D. Tsukiyama, K. Yamaoka, D. Nakamura, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Investigation of low-temperature deposition of SiOCH film by remote plasma-enhanced chemical vapor deposition using TEOS"
25th Electronic Materials Symposium, J4, pp. 258-259¡¢¥Û¥Æ¥ë¥µ¥ó¥Ð¥ì¡¼Éٻθ«¡¢°ËƦ¤Î¹ñ»Ô¡¢7·î7Æü (2006).
K. Yamaoka, H. Kato, D. Tsukiyama, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Thermal stability and electrical properties of SiOCH films deposited PECVD at low temperature"
25th Electronic Materials Symposium, J6, pp. 262-263¡¢¥Û¥Æ¥ë¥µ¥ó¥Ð¥ì¡¼Éٻθ«¡¢°ËƦ¤Î¹ñ»Ô¡¢7·î7Æü (2006).
Y. Fujiwara, A. J. Kenyon, B. Moine and P. Ruterana:
Optical Materials 28(6-7) (2006) pp. 575-896. [Rare earth doped photonic materials. Proceedings of the European Materials Research Society 2005 Spring Meeting - Symposium C].