Y. Fujiwara, S. Takemoto, T. Tokuno, K. Hidaka, H. Ichida, M. Suzuki, Y. Terai, Y. Kanematsu and M. Tonouchi:
"Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5mm light-emitting devices with extremely stable wavelength"
Physica Status Solidi (a) 205(1) (2008) pp. 64-67.
K. Shimada, Y. Terai, S. Takemoto, K. Hidaka, Y. Fujiwara, M. Suzuki and M. Tonouchi:
"Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy"
Applied Physics Letters 92(11) (2008) pp. 111115/1-3.
Y. Terai, K. Hidaka, T. Hiramatsu and Y. Fujiwara:
"Organometallic vapor phase epitaxy of Er,O-codoped GaAs using trisdipivaloylmethanatoerbium",
Journal of Physics: Conference Series 106 (2008) pp. 012007/1-4.
K. Yamaoka, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane"
Thin Solid Films 517(2) (2008) pp. 479-482.
K. Fujii, K. Hidaka, D. Yamamoto, Y. Terai and Y. Fujiwara:
"GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy"
Physica Status Solidi (c) 5(9) (2008) pp. 2716-2718.
K. Shimada, S. Takemoto, K. Hidaka, Y. Terai, M. Tonouchi and Y. Fujiwara:
"Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy"
Physica Status Solidi (c) 5(9) (2008) pp. 2861-2863.
A. Fujita, T. Tokuno, K. Hidaka, K. Fujii, K. Tachibana, H. Ichida, Y. Terai, Y. Kanematsu and Y. Fujiwara:
"Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy"
Physica Status Solidi (c) 5(9) (2008) pp. 2864-2866.
K. Yamaoka, Y. Terai, T. Yamaguchi and Y. Fujiwara:
"Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering"
Physica Status Solidi (c) 5(9) (2008) pp. 3125-3127.
S. Hashimoto, Y. Terai and Y. Fujiwara:
"Improved initial epitaxial growth of b-FeSi2 on Si(111) substrate by Al-doping"
Physica Status Solidi (c) 5(9) (2008) pp. 3159-3161.
K. Ono, M. Takemi and Y. Fujiwara:
"MOVPE growth parameter dependence of phase separation in miscility gap of InGaAsP"
Japanease Journal of Applied Physics 47(2) (2008) pp. 896-898.
Y. Terai, T. Tokuno and Y. Fujiwara:
"Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature"
Optical Materials 31(9) (2009) pp. 1323-1326.
Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi and Y. Fujiwara:
"Ultrafast carrier-capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy"
Applied Physics Letters 93(23) (2008) 231117/1-3.
Y. Fujiwara:
"Quantum properties revealed by precise control of atomic configuration in rare-earth doped semiconductors"
MRS International Materials Research Conference, D8.4, Chongqing, China, June 9-12 (2008).
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Y. Fujiwara:
"Injection-type 1.5mm light-emitting diodes with Er,O-codoped GaAs exhibiting extremely temperature-stable emission wavelength".
3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Edmonton, Canada, July 20-25 (2008).
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Y. Terai, S. Hashimoto, K. Noda, and Y. Fujiwara:
"Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reaction deposition epitaxy"
35th International Symposium on Compound Semiconductors (ISCS), We2.5, Europa-Park, Rust, Germany, September 21-24 (2008).
K. Yamaoka, Y. Terai, T. Yamaguchi, K. Yoshida and Y. Fujiwara:
"Structural and Luminescent Properties of Er-Doped ZnO Films Grown by MOCVD"
5th International Workshop on ZnO and Related Materials, AP40, Ann Arbor Marriott Ypsilanti at Eagle Crest, Michigan, USA, September 22-24 (2008).
M. Fujisawa, A. Asakura, E. Fatma, S. Okubo, H. Ohta and Y. Fujiwara:
"Electron Spin Resonance Study of Photoluminescent Semiconductor GaAs: Er,O -Er Concentration Effect-"
4th Handai Nanoscience and Nanotechnology International Symposium: Nano-advanced Materials and Devices -from Nano-fabrication to Nano-application-, P1-27, Icho-kaikan, Osaka University, Suita, Osaka, September 29-October 1 (2008).
Y. Konaka, K. Ono, E. Taguchi, H. Mori, Y. Terai and Y. Fujiwara:
"TEM observation of phase separation in InGaAsP grown by OMVPE"
4th Handai Nanoscience and Nanotechnology International Symposium: Nano-advanced Materials and Devices -from Nano-fabrication to Nano-application-, P1-28, Icho-kaikan, Osaka University, Suita, Osaka, September 29-October 1 (2008).
Y. Fujiwara, Y. Terai and A. Nishikawa:
"Development of new-type 1.5 µm light-emitting devices based on Er, O-codoped GaAs"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), OR212, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
Y. Terai, K. Noda, S. Hashimoto, and Y. Fujiwara:
"Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), PO51, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
K. Yamaoka, Y. Terai, T. Yamaguchi, H. N. Ngo, T. Gregorkiewicz, and Y. Fujiwara:
"Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 µm photoluminescence"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), PO49, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
H. Kasai, A. Nishikawa, Y. Terai and Y. Fujiwara:
"Luminescence Properties of Eu-implanted GaN-based Semiconductors"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), PO28, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
H. Ohta, M. Fujisawa, M. Yoshida, and Y. Fujiwara:
"Electron spin resonance study on Er,O-codoped GaAs"
2008 Materials Research Society Fall Meeting, Boston, USA, D1.1, December 1-5 (2008).
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Y. Fujiwara, K. Fujii, A. Fujita, Y. Ota, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji and Y. Terai:
"Luminescence properties in Er,O-codoped GaAs light-emitting devices with double excitation mechanism"
2008 Materials Research Society Fall Meeting, Boston, USA, D1.2, December 1-5 (2008).
M. Fujisawa, A. Asakura, E. Fatma, S. Okubo, H. Ohta, and Y. Fujiwara:
"ESR study of Er-concentration effect in photoluminescent semiconductor GaAs:Er,O"
2008 Materials Research Society Fall Meeting, Boston, USA, D4.6, December 1-5 (2008).
K. Shimada, Y. Terai, Y. Ota, I. Kawayama, M. Tonouchi, and Y. Fujiwara:
"Teraherz radiation from Er,O-codoped GaAs surface excited by optical pulse"
IUMRS International Conference in Asia 2008 (IUMRS-ICA2008), Nagoya Congress Center, Nagoya, December 9-13 (2008).
K. Yamaoka, Y. Terai, T. Yamaguchi, and Y. Fujiwara:
"Annealing effects on luminescent properties of Er-doped ZnO films grown by metalorganic chamical vapor deposition"
IUMRS International Conference in Asia 2008 (IUMRS-ICA2008), Nagoya Congress Center, Nagoya, December 9-13 (2008).
Y. Ota, K. Fujii, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, Y. Terai, and Y. Fujiwara:
"Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy"
IUMRS International Conference in Asia 2008 (IUMRS-ICA2008), Nagoya Congress Center, Nagoya, December 9-13 (2008).
Y. Fujiwara:
"Er,O-codoped GaAs-based 1.5 mm light-emitting diodes with extremely stable emission wavelength"
The 13th Academic Exchange Seminar between Osaka University and Shanghai Jiao Tong University, Icho-kaikan, Osaka University, Suita, October 8 (2008).