Y. Ota, K. Fujii, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, Y. Terai, and Y. Fujiwara:
"Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy"
IOP Conference Series: Materials Science and Engineering 1 (2009) 012022/1-4.
Y. Terai, K. Noda, S. Hashimoto, and Y. Fujiwara:
"Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy"
Journal of Physics: Conference Series 165 (2009) pp. 012023/1-4.
H. Sakaguchi, T. Mishima, T. Meguro, Y. Otoki and Y. Fujiwara:
"Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy"
Journal of Physics: Conference Series 165 (2009) pp. 012024/1-4.
Y. Fujiwara, Y. Terai and A. Nishikawa:
"Development of new-type 1.5 mm light-emitting devices based on Er, O-codoped GaAs"
Journal of Physics: Conference Series 165 (2009) pp. 012025/1-6.
H. Kasai, A. Nishikawa, Y. Terai and Y. Fujiwara:
"Luminescence Properties of Eu-implanted GaN-based Semiconductors"
Journal of Physics: Conference Series 165 (2009) pp. 012026/1-4.
K. Yamaoka, Y. Terai, T. Yamaguchi, H. N. Ngo, T. Gregorkiewicz, and Y. Fujiwara:
"Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 µm photoluminescence"
Journal of Physics: Conference Series 165 (2009) pp. 012027/1-4.
Y. Terai, S. Hashimoto, K. Noda, and Y. Fujiwara:
"Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy"
Physica Status Solidi (c) 6(6) (2009) pp. 1488-1491.
Y. Terai, T. Tokuno, H. Ichida, Y. Kanematsu and Y. Fujiwara:
"Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature"
Optical Materials 31(9) (2009) pp. 1323-1326.
K. Noda, Y. Terai, S. Hashimoto, K. Yoneda, Y. Fujiwara:
"Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy"
Applied Physics Letters 94(24) (2009) pp. 241907/1-3.
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, Y. Fujiwara:
"Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection"
Appl. Phys. Exp. 2 (2009) pp. 071004/1-3.
Y. Terai, K. Yamaoka, T. Yamaguchi and Y. Fujiwara:
"Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition"
Journal of Vacuum Science and Technology 27(5) (2009) pp. 2248-2251.
Y. Fujiwara, K. Fujii, A. Fujita, Y. Ota, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, A. Nishikawa, and Y. Terai:
"Luminescence properties in Er,O-codoped GaAs light-emitting devices with double excitation mechanism"
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1111, edited by V. Dierolf, Y. Fujiwara, U. Hommerich, P. Ruterana, and J. M. Zavada (Materials Research Society, Pennsylvania, 2009) pp. 143-148.
A. Nishikawa, H. Kasai, T. Kawasaki, Y. Terai, Y. Fujiwara:
"Optical properties of Eu-implanted GaN and related-alloy semiconductors"
Journal of Physics: Conference Series 191 (2009) pp. 012028/1-4.
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai and Y. Fujiwara¡§
"Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE"
physica status solidi A, in press.
T. Kawasaki, A. Nishikawa, N. Furukawa, Y. Terai and Y. Fujiwara¡§
"Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy"
physica status solidi, in press.
Y. Terai, K. Yamaoka, K. Yoshida, T. Tsuji and Y. Fujiwara:
"Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica E, (in press).
Y. Terai, T. Tsuji, K. Noda, and Y. Fujiwara:
"Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation"
Physica E, (in press).
Y. Konaka, K. Ono, Y. Terai and Y. Fujiwara:
"Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy"
J. Cryst. Growth, (in press).
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A. Nishikawa, H. Kasai, Y. Terai and Y. Fujiwara¡§
"Optical properties of Eu-implanted GaN and related-alloy semiconductors"
3rd International Symposium on Atomic Technology (ISAT-3) and 3rd Polyscale Technology Workshop (PTW-3), PP-4-93, Tokyo International Exchange Center, Tokyo, Japan, March 5-6 (2009).
Y. Fujiwara, Y. Ota, Y. Ito, K. Noguchi, T. Tsuji, T. Kawasaki, A. Nishikawa and Y. Terai¡§
"Electroluminescence properties of 1.5 µm light-emitting devices with Er,O-codoped GaAs"
25th International Conference on Defects in Semiconductors (ICDS25), Mon-2.3po, St. Petersburg, Russia, July 20-24 (2009).
Y. Terai, T. Tsuji, K. Noda, and Y. Fujiwara¡§
"Photoluminescence properties of Er-doped β-FeSi2 grown by ion beam synthesis methods"
14th International Conference on Modulated Semiconductor structures (MSS-14) , Mo-mP18, Kobe, Japan, July 19-24 (2009). ¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡
Y. Terai, K. Yamaoka, K. Yoshida, A. Yoshida and Y. Fujiwara¡§
"Luminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition"
14th International Conference on Modulated Semiconductor structures (MSS-14) , Mo-mP19, Kobe, Japan, July 19-24 (2009). ¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡
T. Tsuji, T. Mahara, H. Ichida, A. Nishikawa, Y. Terai, Y. Kanematsu and Y. Fujiwara¡§
"Optical Gain in Er,O-codoped GaAs"
5th Handai Nanoscience and Nanotechnology International Symposium¡¢P1-35¡¢Icho-Kaikan, Osaka University, Japan¡¢September 1 2009.
T. Kawasaki, A. Nishikawa, N. Furukawa, Y. Terai and Y. Fujiwara¡§
"Growth Temperature Dependence on Luminescence Properties of Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy"
5th Handai Nanoscience and Nanotechnology International Symposium¡¢P1-50¡¢Icho-Kaikan, Osaka University, Japan¡¢September 1 2009.
K. Noda, K. Yoneda, Y. Terai and Y. Fujiwara¡§
"Direct Bandgap Modifications in β-FeSi2 Epitaxial Films Revealed by Photoreflectance Measurement"
5th Handai Nanoscience and Nanotechnology International Symposium¡¢P1-51¡¢Icho-Kaikan, Osaka University, Japan¡¢September 1 2009.
A.Nishikawa, K. Noguchi, T. Tsuji, R. Wakamatsu, Y. Ota, Y. Terai and Y. Fujiwara¡§
"Electroluminescence Properties of GaInAs/Er,O-codoped GaAs/GaInP Double Quantum Well Laser Diodes"
5th Handai Nanoscience and Nanotechnology International Symposium¡¢P1-52¡¢Icho-Kaikan, Osaka University, Japan¡¢September 1 2009.
Y. Fujiwara, K. Noguchi, T. Tsuji, T. Kawasaki, A. Nishikawa and Y. Terai¡§
"1.5 µm Er-2O electroluminescence in laser diodes with Er,O-codoped GaAs"
3rd Workshop of Impurity Based Electroluminescent Devices and Materials, #39, Tossa de Mar, Spain, September 30-October 3 (2009). ¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡
A.Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai and Y. Fujiwara¡§
"Room-temperature electroluminescence properties of p-GaN/Eu-doped GaN/n-GaN light-emitting diodes"
3rd Workshop of Impurity Based Electroluminescent Devices and Materials, #39, Tossa de Mar, Spain, September 30-October 3 (2009). ¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡¡
T. Kawasaki, A. Nishikawa, N. Furukawa, Y. Terai and Y. Fujiwara¡§
"Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy"
8th International Conference on Nitride Semiconductors (ICNS), ThP18, Jeju International Convention Center, Korea, October 18-23(2009).
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai and Y. Fujiwara¡§
"Low-Voltage Operation of Current-Injection Red Emission from P-GaN/Eu-Doped GaN/N-GaN Light-Emitting Diodes"
8th International Conference on Nitride Semiconductors (ICNS), ThP118, Jeju International Convention Center, Korea, October 18-23(2009).
T. Tozuka, Y. Terai, K. Noguchi, A. Nishikawa, I. Kawayama, M. Tonouchi, and Y. Fujiwara¡§
"Enhancement of terahertz radiation from Er,O-codoped GaAs/undoped GaAs surface"
International Workshop on Terahertz Technology Osaka University Nakanoshima Center, Osaka , Japan, November 30-December 3 (2009).
Y. Terai, K. Yoshida, M. H. Kamarudin and Y. Fujiwara:
"Growth of Eu-doped ZnO by sputtering-assisted metalorganic chemical vapor deposition"
2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2010), Nagoya, Japan, March 9-10 (2010).
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature"
4th International Conference on LED and Solid State Lighting (LED2010), W-II-2, Seoul, Korea, February 3-5 (2010).
[invited]