H. Ohta, O. Portugall, N. Ubrig, M. Fujisawa, H. Katsuno, E. Fatma, S. Okubo, and
Y. Fujiwara:
"Photoluminescence measurement of Er,O-codoped GaAs under a pulsed magnetic field up to 60 T"
Journal of Low Temperature Physics 159 (2010) pp. 203-207. http://link.springer.com/article/10.1007/s10909-009-0150-2
M. Fujisawa, A. Asakura, F. Elmasry, S. Okubo, H. Ohta, and Y. Fujiwara:
"Magnetic properties of magnetic semiconductor GaAs:Er,O studied by ESR"
Journal of Physics: Conference Series 200 (2010) 062005/1-4. http://iopscience.iop.org/1742-6596/200/6/062005
H. Kasai, A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara:
"Improved Eu luminescence properties in Eu-doped GaN grown on GaN substrates by organometallic vapor phase epitaxy"
Japanese Journal of Applied Physics 49(4) (2010) pp. 048001/1-2. http://jjap.jsap.jp/cgi-bin/getarticle?magazine=JJAP&volume=49&page=048001
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature"
e-Journal of Light Emitting Diode 2(1) (2010) pp. W-II-2/1-4.
Y. Konaka, K. Ono, Y. Terai, and Y. Fujiwara:
"Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy"
Journal of Crystal Growth 312 (2010) pp. 2056-2059.
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara:
"Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE"
Physica Status Solidi A 207(6) (2010) pp. 1397-1399. http://www.sciencedirect.com/science/article/pii/S0022024810002253
T. Kawasaki, N. Furukawa, A. Nishikawa, Y. Terai, and Y. Fujiwara:
"Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy"
Physica Status Solidi C 7(7-8) (2010) pp. 2040-2042. http://onlinelibrary.wiley.com/doi/10.1002/pssc.200983470/abstract
A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:
"Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy"
Applied Physics Letters 97(5) (2010) pp. 051113/1-3.
Y. Terai, T. Tsuji, K. Noda, and Y. Fujiwara:
"Photoluminescence properties of Er-doped β-FeSi2 grown by ion beam synthesis methods"
Physica E 42 (2010) pp. 2846-2848.
Y. Terai, K. Yamaoka, K. Yoshida, A. Yoshida and Y. Fujiwara:
"Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica E 42 (2010) pp. 2834-2836.
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ºàÎÁ 59 (2010) pp. 671-674.
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ºàÎÁ 59 (2010) pp. 690-693.
N. Furukawa, A. Nishikawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:
"Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy"
Physica Status Solidi A 208 (2010) pp. 445-448. http://onlinelibrary.wiley.com/doi/10.1002/pssa.201000598/abstract
K. Lorenz and E. Alves, I. S. Roqan and K. P. O¡ÇDonnell, A. Nishikawa, and Y. Fujiwara:
"Lattice site location of optical centres in GaN:Eu LED material grown by organometallic vapor phase epitaxy"
Applied Physics Letters 97 (2010) pp. 111911/1-3. http://dx.doi.org/10.1063/1.3489103
Y. Terai, K. Yoshida, M. H. Kamarudin and Y. Fujiwara:
"Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica Status Solidi C 8(2) (2011) pp. 519-521.
N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf:
"Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center"
Applied Physics Letters 98 (2011) pp. 011102/1-3.
K. Noda, Y. Terai, K. Yoneda, and Y. Fujiwara:
"Temperature dependence of direct transition energies in β-FeSi2 epitaxial films on Si(111) substrate"
Physics Procedia 11 (2011) pp. 181-184.
K. Yoneda, Y. Terai, K. Noda, N Miura, and Y. Fujiwara:
"Photoluminescence and photoreflectance studies in Si/β-FeSi2/Si(001) double heterostructure"
Physics Procedia 11 (2011) pp. 185-188.
A. Nishikawa, T. Kawasaki, N. Furukawa, S. Anada, N.Woodward, V. Dierolf, S. Emura, H. Asahi, Y. Terai, and Y. Fujiwara:
"Growth temperature dependence of Eu-doped GaN by organometallic vapor phase epitaxy"
International Conference on Core Research and Engineering Science of Advanced Materials, Icho-Kaikan, Osaka, Japan, May 30-June 4 (2010).
Y. Terai, K. Yoshida, M. H. Kamarudin, and Y. Fujiwara:
"Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
37th International Symposium on Compound Semiconductors, TuP34, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
N. Furukawa, A. Nishikawa, T. Kawasaki, S. Anada, Y. Terai, and Y. Fujiwara:
"Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy"
37th International Symposium on Compound Semiconductors, FrD1-1, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
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M. Fujita, A. Nishikawa, Y. Terai, Y. Fujiwara and S. Noda:
"GaAs photonic nanocavities with erbium luminescent centers"
37th International Symposium on Compound Semiconductors, FrD3-4, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
T. Tozuka, Y. Terai. K. Noguchi, A. Nishikawa, I. Kawayama, M. Tonouchi and Y. Fujiwara:
"Optical characterization of Er-related trap level in Er,O-codoped GaAs"
37th International Symposium on Compound Semiconductors, FrP13, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
A. Nishikawa, Y. Terai and Y. Fujiwara:
"Room-temperature red emission from light emitting-diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy"
2010 European Materials Research Society Spring Meeting (E-MRS2007), 5.1, Strasbourg, France, June 7-11 (2010).
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K. Lorenz, E. Alves, I. S. Roqan, K. P. O¡ÇDonnell, A. Nishikawa, Y. Fujiwara, and M. Bockowski:
"Europium incorporation in GaN grown by metal organic chemical vapour deposition"
2010 European Materials Research Society Spring Meeting (E-MRS2007), 5.2, Strasbourg, France, June 7-11 (2010).
N. Woodward, V. Dierolf, A. Nishikawa, and Y. Fujiwara:
"Site selective excitation pathways of in-situ doped Eu:GaN grown by MOCVD"
2010 European Materials Research Society Spring Meeting (E-MRS2007), 8.12, Strasbourg, France, June 7-11 (2010).
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature"
Third International Symposium on Growth of III-Nitrides (ISGN3), WE4-2, Montpellier, France, July 4-7 (2010).
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Y. Terai, K. Noda, K. Yoneda, 1H. Udono, 2Y. Maeda, and Y. Fujiwara:
"Band-gap Modifications of β-FeSi2 Epitaxial Films by Lattice Deformations"
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics, 25-PM-V-5, Tsukuba, Ibaraki, July 24-26 (2010).
K. Noda, Y. Terai, K. Yoneda, and Y. Fujiwara:
"Temperature dependence of direct transition energies in β-FeSi2 epitaxial films on Si(111) substrate"
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics, 24-P8, Tsukuba, Ibaraki, July 24-26 (2010).
K. Yoneda, Y. Terai, K. Noda, N. Miura, and Y. Fujiwara:
"Photoluminescence and Photoreflectance Studies in Si/β-FeSi&spbsc{2};/Si(001) Double Heterostructure"
Asia-Pacific Conference on Semiconducting Silicides and Related Materials Science and Technology Towards Sustainable Optoelectronics, 24-P9, Tsukuba, Ibaraki, July 24-26 (2010).
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy"
15th International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium, St. Petersburg, Russia, September 27-October 1 (2010).
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T. Tsuji, Y. Terai, M. H. Kawarudin, K. Yoshida, and Y. Fujiwara:
"Formation of Eu3+ luminescent centers in Eu-doped ZnO by thermal annealing"
3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2011), Nagoya, Japan, March 8-9 (2011).
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"Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection"
Âè71²ó±þÍÑʪÍý³Ø²ñ³Ø½Ñ¹Ö±é²ñ¡¢15a-NB-1¡¢Ä¹ºêÂç³Ø¡¢Ä¹ºê»Ô¡¢9·î15Æü (2010).
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Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Recent progress in rare-earth-doped semiconductors"&br
2010 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 12.4, Portland, USA, May 17-20 (2010). ¡Ú¾·ÂÔ¹Ö±é¡Û
A. Nishikawa, T. Kawasaki, N. Furukawa, S. Anada, N.Woodward, V. Dierolf, S. Emura, H. Asahi, Y. Terai, and Y. Fujiwara:
"Growth temperature dependence of Eu-doped GaN by organometallic vapor phase epitaxy
International Conference on Core Research and Engineering Science of Advanced Materials, Icho-Kaikan, Osaka, Japan, May 30-June 4 (2010).
Æ£¸¶¹¯Ê¸¡¢À¾ÀîÆØ¡¢»û°æ·ÄÏÂ:
"Room-temperature operation of red light-emitting diodes with europium-doped gallium nitride grown by organometallic vapor phase epitaxy"
Âè335²ó·Ö¸÷ÂÎƱ³Ø²ñ¹Ö±é²ñ¡¢ÌÀ¼£Âç³Ø½Ù²ÏÂ楥ã¥ó¥Ñ¥¹¡¢ÅìµþÅÔÀéÂåÅĶ衢12·î4Æü (2010).