N. Furukawa, A. Nishikawa, T. Kawasaki, Y. Terai, and Y. Fujiwara: "Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy"
Physica Status Solidi A 208(2) (2011) pp. 445-448. http://onlinelibrary.wiley.com/doi/10.1002/pssa.201000598/abstract
Y. Terai, K. Yoshida, M. H. Kamarudin, and Y. Fujiwara: "Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica Status Solidi C 8(2) (2011) pp. 519-521. http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000468/abstract
H. Ofuchi, T. Honma, A. Nishikawa, N. Furukawa, T. Kawasaki, and Y. Fujiwara: "Fluorescence EXAFS analysis of Eu-doped GaN layers grown by organometallic vapor phase epitaxy"
e-Journal of Surface Science and Nanotechnology 9 (2011) pp. 51-53. https://www.jstage.jst.go.jp/article/ejssnt/9/0/9_0_51/_pdf
N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf: "Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center"
Applied Physics Letters 98(1) (2011) pp. 011102/1-3. http://apl.aip.org/resource/1/applab/v98/i1/p011102_s1
M. Fujisawa, A. Asakura, F. Elmasry, S. Okubo, H. Ohta, and Y. Fujiwara:
"ESR study of photoluminescent material GaAs:Er,O -Er concentration effect"
Journal of Applied Physics 109(5) (2011) pp. 053910/1-5. http://jap.aip.org/resource/1/japiau/v109/i5/p053910_s1
A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:
"Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy"
Optical Materials 33(7) (2011) pp. 1071-1074. http://www.sciencedirect.com/science/article/pii/S0925346710004404
H. Katsuno, H. Ohta, O. Portugall, N.s Ubrig, M. Fujisawa, F. Elmasry, S. Okubo, and Y. Fujiwara:
"Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement"
Journal of Luminescence 131 (2011) pp. 2294-2298. http://www.sciencedirect.com/science/article/pii/S0022231311002985
K. Hatasako, F. Yamamoto, A. Uenishi, T. Kuroi, S. Maegawa, and Y. Fujiwara:
"ESD Robustness Improvement for Integrated DMOS Transistor - The different gate voltage dependence of It2 between VDMOS and LDMOS transistors-"
IEEJ Transactions on Electrical and Electronic Engineering 6 (2011) pp. 361-366. http://onlinelibrary.wiley.com/doi/10.1002/tee.20669/abstract
K. Kadoiwa, H. Sasaki, Y. Terai, and Y. Fujiwara:
"Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS"
Journal of the Society of Materials Science, Japan 60(11) (2011) pp.998-1003.
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ºàÎÁ 60(11) (2011) pp. 998-1003.
A. Nishikawa, N. Furukawa, D. Lee, K. Kawabata, T. Matsuno, R. Harada, Y. Terai, and
Y. Fujiwara:
"Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy"
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 9-13. http://dx.doi.org/10.1557/opl.2011.994
S. Emura, K. Higashi, A. Itatani, H. Torigoe, Y. Kuroda, A. Nishikawa, Y. Fujiwara, and Hajime Asahi:
"Photoluminescence x-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy"
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 15-20. http://dx.doi.org/10.1557/opl.2011.1241
J. Poplawsky, N. Woodward, A. Nishikawa, Y. Fujiwara, and V. Dierolf:
"Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy"
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 21-26. http://dx.doi.org/10.1557/opl.2011.1049
N. Woodward, A. Nishikawa, Y. Fujiwara, and V. Dierolf:
"Site selective magneto-optical studies of Eu ions in gallium nitride"
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 111-115. http://dx.doi.org/10.1557/opl.2011.1156
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ÆüËÜ·ë¾½À®Ä¹³Ø²ñ»ï 38(4) (2011) pp. 270-273. http://ci.nii.ac.jp/naid/110009327765
Y. Fujiwara, A. Nishikawa, and Y. Terai: [Invited talk]
"Present status and prospect of red light-emitting diodes with Eu-doped GaN"
5th International Conference on LED and Solid State Lighting (LED 2011), Seoul, Korea, April 11-12 (2011).
Y. Terai, T. Tsuji, M. H. Kamarudin, and Y. Fujiwara: [Invited talk]
"Luminescence properties of Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
2011 Materials Research Society Spring Meeting, V2.1, San Francisco, USA, April 28-29 (2011).
A. Nishikawa, N. Furukawa, D. Lee, K. Kawabata, T. Matsuno, R. Harada, Y. Terai, and
Y. Fujiwara:
"Bright red emission from Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy"
2011 Materials Research Society Spring Meeting, V2.8, San Francisco, USA, April 28-29 (2011).
N. N. Ha, W. D. Boer, T. Gregorkiewicz, A. Nishikawa, and Y. Fujiwara:
"Investigations of the 620 nm emission band from Eu3+-doped GaN structures grown by organometallic vapor phase epitaxy"
2011 Materials Research Society Spring Meeting, V3.1, San Francisco, USA, April 28-29 (2011).
S. Emura, K. Higashi, A. Itatani, H. Torigoe, Y. Kuroda, A. Nishikawa, Y. Fujiwara, and
H. Asahi:
"Photoluminescence X-ray Excitation Spectra in Eu-doped GaN Grown by Organometallic Vapor Phase Epitaxy"
2011 Materials Research Society Spring Meeting, V3.2, San Francisco, USA, April 28-29 (2011).
W. D. Boer, T. Gregorkiewicz, S. Tanabe, A. Nishikawa, and Y. Fujiwara:
"Optical activity of Eu3+ in GaN:Eu for light emitting devices"
2011 Materials Research Society Spring Meeting, San Francisco, USA, V3.3, April 28-29 (2011).
J. Poplawsky, N. Woodward, B. Mitchell, V. Dierolf, A. Nishikawa, and Y. Fujiwara:
"Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy"
2011 Materials Research Society Spring Meeting, V3.4, San Francisco, USA, April 28-29 (2011).
Y. Fujiwara, A. Nishikawa, N. Furukawa, D-G. Lee, K. Kawabata, and Y. Terai:
"Improved performance of red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy"
9th International Conference on Nitride Semiconductors, F4.8, Glasgow, UK, July 10-15 (2011).
T. Tsuji, Y. Terai, M. H. Kamarudin, M. Kawabata, and Y. Fujiwara:
"Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS24), 1B2-3, Nara, Japan, August 21-26 (2011).
D. Lee, A. Nishikawa, N. Furukawa, K. Kawabata, Y. Terai, and Y. Fujiwara:
"Enhancement of Eu3+ luminescence intensity in Eu-doped GaN by Mg codoping"
24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS24), 2C4-4, Nara, Japan, August 21-26 (2011).
Y. Terai, K. Noda, K. Yoneda, Y. Maeda, and Y. Fujiwara:
"Photoreflectance and time-resolved photoluminescence studies in ion-beam synthesized β-FeSi2"
Asian School-Conference on Physics and Technology of Nanostructured Materials, III.26.06, Vladivostok, Russia, August 21-28 (2011).
K. Noda, Y. Terai, K. Yoneda, N. Miura, K. Katayama, H. Udono, and Y. Fujiwara:
"Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy"
Asian School-Conference on Physics and Technology of Nanostructured Materials, III.26.07, Vladivostok, Russia, August 21-28 (2011).
H. Ohta, S. Okubo, W.-M. Zhang, M. Fujisawa, Y. Fukuoka, F. Elmasry, and Y. Fujiwara:
"Electron spin resonance study of highly Er doped photoluminescent material GaAs:Er,O"
2011 European Materials Research Society Fall Meeting (E-MRS2011), I3, Warsaw, Poland, September 18-23 (2011).
W.D.A.M. de Boer, T. Gregorkiewicz, S. Tanabe, A. Nishikawa, and Y. Fujiwara:
"Optical activity of Eu3+ in GaN:Eu for light emitting devices"
2011 European Materials Research Society Fall Meeting (E-MRS2011), II4, Warsaw, Poland, September 18-23 (2011).
N. N. Ha, K. Dohnalova, T. Gregorkiewicz, A. Nishikawa, and Y. Fujiwara:
"Investigations of stimulated emission in Er- and Eu-doped GaN"
2011 European Materials Research Society Fall Meeting (E-MRS2011), IV3, Warsaw, Poland, September 18-23 (2011).
A. Nishikawa, H. Ofuchi, N. Furukawa, D. Lee, K. Kawabata, T. Matsuno, Y. Terai, T. Honma, and Y. Fujiwara:
"Effect of V/III ratio on luminescence and structural properties in Eu-doped GaN grown by organometallic vapor phase epitaxy"
2011 European Materials Research Society Fall Meeting (E-MRS2011), IV4, Warsaw, Poland, September 18-23 (2011).
H. Ofuchi, K. Kawabata, A. Nishikawa, D. Lee, N. Furukawa, Y. Terai, T. Honma, and Y. Fujiwara:
"Fluorescence XAFS analysis on Eu-doped AlGaN layer grown by organometallic vapor phase epitaxy by organometallic vapor phase epitaxy"
2011 European Materials Research Society Fall Meeting (E-MRS2011), VII1, Warsaw, Poland, September 18-23 (2011).
J. Poplawsky, A. Nishikawa, Y. Fujiwara, and V. Dierolf:
"Combined Excitation Experiment and the Emission Nature of Eu in GaN"
2011 European Materials Research Society Fall Meeting (E-MRS2011), VII2, Warsaw, Poland, September 18-23 (2011).
D. Lee, A. Nishikawa, N. Furukawa, R. Wakamatsu, Y. Terai, and Y. Fujiwara:
"Enhanced emission of Eu3+ ions in Eu in-situ doped GaN by Mg codoping"
2011 European Materials Research Society Fall Meeting (E-MRS2011), VII3, Warsaw, Poland, September 18-23 (2011).
T. Tsuji, Y. Terai, M. H. Kamarudin, K. Yoshida, and Y. Fujiwara:
"Eu concentration dependence of Eu3+ emission in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
2011 European Materials Research Society Fall Meeting (E-MRS2011), VIII3, Warsaw, Poland, September 18-23 (2011).
S. Furumiya and Y. Fujiwara:
"Phase-change recording film applied laser pulse compensation to form nano-sized marks"
15th International Conference on Thin Films (ICTF-15), O-S12-07, Kyoto Terrsa, Kyoto, Japan, November 8-11 (2011).
H. Taguchi, A. Kitahara, S. Miyake, A. Nakaue, A. Nishikawa, and Y. Fujiwara:
"Dislocation generation in GaN by dicing process"
15th International Conference on Thin Films (ICTF-15), P-S12-02, Kyoto Terrsa, Kyoto, Japan, November 8-11 (2011).
R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara:
"Time-resolved photoluminescence study of Eu-doped GaN grown by organometallic vapor phase epitaxy"
15th International Conference on Thin Films (ICTF-15), P-S12-05, Kyoto Terrsa, Kyoto, Japan, November 8-11 (2011).
T. Tsuji, Y. Terai, M. H. Kamarudin, and Y. Fujiwara:
"Effects of Cu co-doping on photoluminescence properties in Eu-doped ZnO"
7th Handai Nanoscience and Nanotechnology International Symposium, PH-21, Icho-Kaikan, Osaka University, Osaka, Japan, November 10-11 (2011).
K. Noda, Y. Terai, and Y. Fujiwara:
"Dependence of direct bandgap energies on growth condition in β-FeSi2 epitaxial films on Si(001) substrate"
7th Handai Nanoscience and Nanotechnology International Symposium, PH-38, Icho-Kaikan, Osaka University, Osaka, Japan, November 10-11 (2011).
R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara:
"Excitation behavior of the anomalous peak in Eu-doped gallium nitride;
7th Handai Nanoscience and Nanotechnology International Symposium, PH-39, Icho-Kaikan, Osaka University, Osaka, Japan, November 10-11 (2011).
A. Nishikawa, N. Furukawa, D. Lee, R. Wakamatsu, T. Matsuno, Y. Terai, and
Y. Fujiwara:
"Thermal quenching behavior of luminescence peaks in Eu-doped GaN"
International Symposium on Materials Science and Innovation for Sustainable Society –Eco-Materials and Eco-Innovation for Global Sustainability— (ECO-MATES 2011), CSI-2, Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).
R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara:
"Anomalous luminescence peak in Eu-doped GaN grown by organometallic vapor phase epitaxy"
International Symposium on Materials Science and Innovation for Sustainable Society –Eco-Materials and Eco-Innovation for Global Sustainability- (ECO-MATES 2011), PT3-9, Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).
D. Lee, A. Nishikawa, N. Furukawa, R. Wakamatsu, Y. Terai, and Y. Fujiwara:
"Temperature dependence of luminescence properties in Eu,Mg-codoped GaN"
International Symposium on Materials Science and Innovation for Sustainable Society –Eco-Materials and Eco-Innovation for Global Sustainability— (ECO-MATES 2011), PT3-15, Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).
T. Tsuji, Y. Terai, M. H. Kamarudin, and Y. Fujiwara:
"Growth of rare-earth doped ZnO by sputtering-assisted metalorganic chemical vapor deposition"
International Symposium on Materials Science and Innovation for Sustainable Society –Eco-Materials and Eco-Innovation for Global Sustainability— (ECO-MATES 2011), PT3-16, Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).
K. Noda, Y. Terai, and Y. Fujiwara:
"Investigation of direct bandgap energies of β-FeSi2 epitaxial films by photoreflectance"
International Symposium on Materials Science and Innovation for Sustainable Society –Eco-Materials and Eco-Innovation for Global Sustainability— (ECO-MATES 2011), PT3-30, Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).
Y. Fujiwara, A. Nishikawa, and Y. Terai: [Invited talk]
"Recent Progress in Red Light-Emitting Diodes with Eu-Doped GaN"
18th International Display Workshops 2011 (IDW2011), PH2-2, Nagoya Congress Center, Nagoya, Japan, December 7-9 (2011).
Bin Kamarudin Muhammad Hakim¡¢»û°æ·ÄÏ¡¢ÄԶƹ¨¡¢Æ£¸¶¹¯Ê¸¡§
"Eu,N¶¦Åº²ÃZnO¤Ë¤ª¤±¤ëEu3+ȯ¸÷¤Ø¤ÎÃâÁÇź²Ã¸ú²Ì"
Âè72²ó±þÍÑʪÍý³Ø²ñ³Ø½Ñ¹Ö±é²ñ¡¢1p-P11-8, »³·ÁÂç³Ø¾®ÇòÀã¥ó¥Ñ¥¹¡¢»³·Á»Ô¡¢9·î1Æü (2011).
Y. Fujiwara, K. Kawabata, H. Ofuchi, D. Lee, A. Koizumi, A. Nishikawa, Y. Terai, and T. Honma
"Eu luminescence properties in Eu-doped AlxGa1-xN grown by organometallic vapor phase epitaxy"
4th International Workshop on Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE'12), O-32, Shiran-Kaikan, Kyoto University, Kyoto, Japan, March 28-30 (2012).