L. Gomez, J. Lin, C. de Weerd, L. Poirier, S. C. Boehme, E. von Hauff, Y. Fujiwara, K. Suenaga, and T. Gregorkiewicz: "Extraordinary interfacial stitching between single all-inorganic perovskite nanocrystals,"
ACS Applied Materials and Interfaces 10 (2018) pp. 5984-5991.
W. Zhu, R. Wei, D. Timmerman, T. Gregorkiewicz, B. Mitchell, Y. Fujiwara, and V. Dierolf: "Re-excitation of trivalent europium ions doped into gallium nitride revealed through photoluminescence under femtosecond pulsed excitation,"
ACS Photonics 5 (2018) pp. 875-880.
B. Mitchell, V. Dierolf, T. Gregorkiewicz, and Y. Fujiwara: [Invited review paper] "Perspective: Highly efficient GaN-based red LEDs using europium doping,"
Journal of Applied Physics 123 (2018) pp. 160901/1-12.
J. Takatsu, R. Fuji, J. Tatebayashi, D. Timmerman, A. Lesage, T. Gregorkiewicz, and Y. Fujiwara: "Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy,"
Journal of Applied Physics 123 (2018) pp. 161406/1-5.
J. Tatebayashi, G. Yoshii, T. Nakajima, H. Kamei, J. Takatsu, D. M. Lebrun, and Y. Fujiwara: "Control of the energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,"
Journal of Applied Physics 123 (2018) pp. 161409/1-6.
T. Inaba, T. Kojima, G. Yamashita, E. Matsubara, B. Mitchell, R. Miyagawa, O. Eryu, J. Tatebayashi, M. Ashida, and Y. Fujiwara: "Quantitative study on energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy,"
Journal of Applied Physics 123 (2018) pp. 161419/1-6.
K. Shiojima, Y. Kashiwagi, T. Shigemune, A. Koizumi, T. Kojima, M. Saitoh, T. Hasegawa, M. Chigane, and Y. Fujiwara: "Effect of surface treatment in printed Ag Schottky contacts on n-GaN epitaxial layers by using Ag nanoink -Two dimensional characterizations by scanning internal photoemission microscopy-,"
Japanese Journal of Applied Physics 57 (2018) pp. 07MA01/1-5.
M. O. Nestoklon, S. V. Goupalov, R. I. Dzhioev, O. S. Ken, V. L. Korenev, Y. G. Kusrayev, V. F. Sapega, C. de Weerd, L. Gomez, T. Gregorkiewicz, J. Lin, K. Suenaga, Y. Fujiwara, L. B. Matyushkin, I. N. Yassievich: "Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals-,"
Physical Review B 97 (2018) pp. 235304/1-10.
B. Mitchell, E. Herrmann, J. Lin, L. Gomez, C. de Weerd, Y. Fujiwara, K. Suenaga, and T. Gregorkiewicz: "Measuring the practical particle-in-a-box: orthorhombic perovskite nanocrystals,"
European Journal of Physics 39 (2018) pp. 055501/1-12.
A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz: "Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si nanocrystals,"
Applied Physics Letters 113 (2018) pp. 031109/1-4.
J. Tatebayashi, G. Yoshii, T. Nakajima, M. Mishina, and Y. Fujiwara: "Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition,"
Journal of Crystal Growth 503 (2018) pp. 13-19.
C. de Weerd, L. Gomez, A. Capretti, D. M. Lebrun, E. Matsubara, J. Lin, M. Ashida, F. C.M. Spoor, L. D.A. Siebbeles, A. J. Houtepen, K. Suenaga, Y. Fujiwara, and T. Gregorkiewicz: "Efficient carrier multiplication in CsPbI3 perovskite nanocrystals,"
Nature Communications 9 (2018) pp. 4199/1-9.
K. Shiomi, T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Demonstration of red vertical microcavity LEDs with Eu-doped GaN as an active layer,"
21th SANKEN International, The 16th SANKEN Nanotechnology Symposium, 5th KANSAI Nanoscience and Nanotechnology, 13th Handai Nanoscience and Nanotechnology International Symposium, '''', Icho Kaikan, Osaka University, Suita, Japan, January 16-17 (2018).
N. Fujioka, M. Ogawa, T. Kishina, R. Higashi, M. Kondow, J. Tatebayashi and Y. Fujiwara: "Observation of anomalous Er emission in a Er,O-codoped GaAs-based two dimensional photonic crystal nanocavity,"
International Conference on Nano-photonics and Nano-optoelectronics 2018 (ICNN2018), Pacifco Yokohama, Japan, April 23-27 (2018).
K. Shiomi, T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Demonstration of red vertical-microcavity LEDs with Eu-doped GaN as an active layer,"
6th International Conference on Light-Emitting Devices and Their Industrial Applications 2018 (LEDIA2018), Pacifco Yokohama, Japan, April 23-27 (2018).
Y. Fujiwara, T. Inaba, K. Shiomi, and J. Tatebayashi: [Invited Talk] "Enhanced light output power from Eu-doped GaN narrow-band red light-emitting diodes by actively controlling photon fields"
233 Electrochemical Society (ECS) meetings, H01 ¡ÈWide Bandgap Semiconductor Materials and Device¡É, 1401, Seattle, USA, May 13-17 (2018).
J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara, and R. Katayama: "GaN rib waveguide directional coupler for waveguide Mach-Zehnder interferometer,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), 4C-1.6, Nara Kasugano International Forum, Japan, June 3-8 (2018).
T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara, and R. Katayama: "Design and fabrication of GaN monolithic doubly-resonant microcavity SHG device,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), 7B-1.4, Nara Kasugano International Forum, Japan, June 3-8 (2018).
J. Takatsu, R. Fuji, J. Tatebayashi, and Y. Fujiwara: "Morphological and optical properties of Tm-doped AlGaN on GaN and AlN templates grown by organometallic vapor phase epitaxy,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), 7C-1.1, Nara Kasugano International Forum, Japan, June 3-8 (2018).
T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Growth of thick (~600 nm) Al0.82In0.18N by temperature-modulation epitaxy for realization of GaN-based photonic crystal slab nanocavities,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), P2-24, Nara Kasugano International Forum, Japan, June 3-8 (2018).
G. Yoshii, T. Nakajima, M. Mishina, J. Tatebayashi, and Y. Fujiwara: "Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), P2-54, Nara Kasugano International Forum, Japan, June 3-8 (2018).
V. Dierolf, R. Wei, B. Mitchell, and Y. Fujiwara: [Invited Talk] "Excitation of europium ions in gallium nitride: Mechanism, kinetics, and optimization,"
12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018), I15, Nara Kasugano International Forum, Japan, July 8-13 (2018).
Y. Sasaki, T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Fabrication and optical properties of GaN:Eu-based microdisks,"
12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018), O44, Nara Kasugano International Forum, Japan, July 8-13 (2018).
Y. Fujiwara: [Invited Talk] "Development of semiconductors intra-center photonics,"
Light Conference 2018, Changchun, China, July 15-18 (2018).
Y. Fujiwara: [Invited Talk] "Towards semiconductors intracenter photonics,"
19th International Workshop on Inorganic and Organic Electroluminescence (EL2018) & 2018 International Conference on the Science and Technology of Emitting Displays and Lighting, IL-2, Meiji University, Tokyo, Japan, September 11-13 (2018).
Y. Fujiwara: [Invited Talk] "Development of semiconductors intra-center photonics,"
2nd JSPS workshop on Japan-Sweden frontiers in photon and spin functionalities of nanomaterials, Noboribetsu, Hokkaido, Japan, October 24-26 (2018).
Delphine M. Lebrun, H. Kogame, W. Zhu, B. Mitchell, and Y. Fujiwara: "Investigation of energy transfer between europium centers in GaN:Eu using combined excitation emission spectroscopy,"
International Workshop on Nitride Semiconductors 2018 (IWN2018), MoP-OD-30, Kanazawa, Japan, November 11-16 (2018).
S. Ichikawa, W. Zhu, B. Mitchell, T. Morikawa, J. Tatebayashi, T. Gregorkiewicz, and Y. Fujiwara: "Novel in-situ technique for dislocation-reduction during GaN growth using multi-layered GaN:Eu structure,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), GR8-2, Kanazawa, Japan, November 11-16 (2018).
S. Ichikawa, T. Morikawa, J. Tatebayashi, and Y. Fujiwara: "Drastic surface-smoothing on vicinal (0001) GaN film via strong surfactant effect of doped-Eu,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), GR8-3, Kanazawa, Japan, November 11-16 (2018).
Y. Matsude, T. Yamada, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Fabrication of two-dimensional GaN:Eu plasmonic crystals toward highly efficient red emitters,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), CR4-1, Kanazawa, Japan, November 11-16 (2018).
J. Tatebayashi, T. Yamada, T. Inaba, Y. Matsude, S. Ichikawa and Y. Fujiwara: "Surface-plasmon-enhanced GaN:Eu-based light-emitting diodes utilizing silver nanoparticles,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), OD6-4, Kanazawa, Japan, November 11-16 (2018).
T. Nambu, T. Komatsu, M. Uemukai, K. Shiomi, Y. Fujiwara, R. Katayama, J. Tajima, T. Hikosaka, and S. Nunoue: "Fabrication of GaN monolithic doubly-resonant microcavity SHG device on Si substrate,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), OD7-2, Kanazawa, Japan, November 11-16 (2018).
M. Ogawa, N. Fujioka, T. Kishina, R. Higashi, M. Kondow, J. Tatebayashi and Y. Fujiwara: "Enhanced light emission in photonic crystal nanocavities with Er,O-codoped GaAs,"
International Symposium for Materials Scientists ¡ÈInspiration for Innovation by Interaction¡É (ISMS III), P28, Osaka University, Toyonaka, Osaka, Japan, December 3-4 (2018).
J. Takatsu, R. Fuji, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Morphological and optical properties of Tm-doped AlGaN on GaN and AlN templates grown by organometallic vapor phase epitaxy,"
International Symposium for Materials Scientists ¡ÈInspiration for Innovation by Interaction¡É (ISMS III), P29, Osaka University, Toyonaka, Osaka, Japan, December 3-4 (2018).
Y. Fujiwara, T. Inaba, K. Shiomi, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Wavelength-stable and narrow-band red LED for monolithic Mmicro-LED display,"
27th International Display Workshops (IDW'18), FMC1-2, Nagoya Congress Center, Nagoya, Japan, December 12-14 (2018).