Y. Anzai, M. Yamamoto, S. Genchi, K. Watanabe, T. Taniguchi, S. Ichikawa, Y. Fujiwara, and H. Tanaka: "Broad range thickness identification of hexagonal boron nitride by colors,"
Applied Physics Express 12 (2019) pp. 055007/1-5. https://iopscience.iop.org/article/10.7567/1882-0786/ab0e45
J. Tatebayashi, T. Yamada, T. Inaba, S. Ichikawa, and Y. Fujiwara: "Enhanced luminescence efficiency of GaN:Eu-based lightemitting diodes by localized surface plasmons utilizing gold nanoparticles,"
Japanese Journal of Applied Physics 58 (2019) pp. SCCC09/1-6. https://iopscience.iop.org/article/10.7567/1347-4065/ab0ad1/meta
A. Lesage, D. Timmerman, T. Inaba, T. Gregorkiewicz, and Y. Fujiwara: "Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD,"
Scientific Reports 9 (2019) pp. 4231/1-6. https://www.nature.com/articles/s41598-019-40971-2
B. Mitchell, R. Wei, J. Takatsu, D. Timmerman, T. Gregorkiewicz, W. Zhu, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, and V. Dierolf: "Color-tunablility in GaN LEDs based on atomic emission manipulation under current injection,"
ACS Photonics 6 (2019) pp. 1153-1161. https://doi.org/10.1021/acsphotonics.8b01461
R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi,
S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions,"
Physical Review B 100 (2019) pp. 081201(R)/1-5. https://doi.org/10.1103/PhysRevB.100.081201
J. Tatebayashi, T. Yamada, T. Inaba, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles,"
Applied Physics Express 12 (2019) 095003/1-5. https://doi.org/10.7567/1882-0786/ab37b0
S. Ichikawa, J. Takatsu, R. Fuji, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Excitation and relaxation processes of narrow-band blue emission in Tm-doped AlGaN revealed by time-resolved photoluminescence spectroscopy,"
11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 12th International Conference on Plasma-Nano Technology & Science (ISPlasma 2019/IC-PLANTS2019), 19P3-35, Nagoya Insitute of Technology, Nagoya, Japan, March 17-21 (2019).
Y. Fujiwara, S. Ichikawa, J. Tatebayashi: [Invited Talk] "New development in red light-emitting diodes (LEDs) using Eu-doped GaN for monolithic micro-LED displays,"
2019 Internional Conference on display technology (ICDT2019), 16.3, Kunshan, Suzhou, China, March 26-29 (2019).
Y. Fujiwara, K. Shiomi, Y. Sasaki, T. Inaba, S. Ichikawa, and J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics; manipulation of Eu luminescence in Eu-doped GaN by control of photon fields,"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-LDC-JS-2-01, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
Y. Sasaki, T. Inaba, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Manipulation of Eu luminescence in GaN:Eu-based microdisks,"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-4-02, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa, and R. Katayama: [Invited Talk] "First demonstration of GaN monolithic doubly-resonant microcavity SHG device on Si pedestal structure,"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-7-01, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
Y. Morioka, S. Yamaguchi, K. Shojiki, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, M. Uemukai, and R. Katayama: "Focusing grating coupler for AlN deep UV waveguide SHG device,"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-8-02, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
M. Ogawa, T. Kishina, R. Higashi, M. Fujita, S. Noda, J. Tatebayashi, and Y. Fujiwara: "Numerical analysis of luminescence enhancement in L3-type photonic crystal nanocavities with Er,O-codoped GaAs,"
International Conference on Nano-photonics and Nano-optoelectronics (ICNN2019), ICNN-4-05, Pacifico Yokohama, Yokohama, Japan, March 24-26 (2019).
S. Yamada, Y. Goto, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and K. Hamaya: "High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN (0001) surface,"
Compound Semiconductor Week 2019 (CSW2019), TuP-A-5, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, S. Ichikawa, J. Tatebayashi, V. Dierolf, and Y. Fujiwara: "Picosecond time-resolved excitation dynamics and emission manipulation of Eu3+ ions doped in GaN,"
Compound Semiconductor Week 2019 (CSW2019), TuP-G-11, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications,"
Compound Semiconductor Week 2019 (CSW2019), WeC2-5, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
Y. Fujiwara, S. Ichikawa, and J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics,"
Collaborative Conference on Materials Research 2019 (CCMR2019), KINTEX, Gyeonggi Goyang, Seoul, Korea, June 2-7 (2019).
Y. Fujiwara, K. Shiomi, Y. Sasaki, T. Inaba, S. Ichikawa, and J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics,"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), A10.01, Bellevue, USA, July 7-12 (2019).
S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Control of growth kinetics towards enhanced red emissions from strongly excited Eu-doped GaN,"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), G09.03, Bellevue, USA, July 7-12 (2019).
S. Yamaguchi., A. Yamauchi., T. Onodera., M. Uemukai., Y. Hayashi., H. Miyake., T. Hikosaka., S. Nunoue., K. Shiomi., Y. Fujiwara, and R. Katayama: "Demonstration of transverse quasi-phase-matched AlN waveguide SHG device fabricated by surface-activated bonding and silicon removal,"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), D01.06, Bellevue, USA, July 7-12 (2019).
M.Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa, and R. Katayama: "Demonstration of GaN monolithic doubly-resonant microcavity SHG device,"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), M01.02, Bellevue, USA, July 7-12 (2019).
R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Incorporation Site Dependent Excitation Dynamics of Eu3+ ions in Eu-doped GaN,"
30th International Conference on Defects in Semiconductors (ICDS-30), FrAII-4, Seattle, USA, July 21-26 (2019).
B.Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, Y. Fujiwara, and V. Dierolf: "Color-tunablility in Eu doped GaN LEDs based on atomic emission manipulation under current injection,"
30th International Conference on Defects in Semiconductors (ICDS-30), PII-7, Seattle, USA, July 21-26 (2019).
J. Tatebayashi, R. Higashi, M. Ogawa, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Observation of strongly enhanced Er-related luminescence coupled with cavity modes in Er,O-codoped GaAs microdisks,"
30th International Conference on Defects in Semiconductors (ICDS-30), PII-18, Seattle, USA, July 21-26 (2019).
J. Tatebayashi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: [Invited Talk] "Enhancement of Eu luminescence in GaN:Eu via introduction of nanostructures and nanocavities,"
Asia Pacific Society for Materials Research 2019 (APSMR2019) Annual Meeting, Hokkaido, Japan, July 26-29 (2019).
M.Uemukai, S. Yamaguchi, A. Yamauchi, D. Tazuke, A. Higuchi, R. Tanabe, T. Tanikawa, T. Hikosaka, S. Nunoue, Y. Hayashi, H. Miyake, Y. Fujiwara, and R. Katayama: [Invited Talk] "InGaN laser pumped nitride semiconductor transverse quasi-phase-matched waveguide second harmonic generation devices,"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), I-07, Kobe, Japan, September 24-27 (2019).
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] "Manipulation of Eu emission from GaN using control of photon fields,"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), I-08, Kobe, Japan, September 24-27 (2019).
B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, Y. Fujiwara, and V. Dierolf: [Invited Talk] "Wavelength-stable and narrow-band red LED for monolithic micro-LED display,"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), I-10, Kobe, Japan, September 24-27 (2019).
D. Timmerman, E. Matsubara, L. Gomez, T. Gregorkiewicz, M. Ashida, and Y. Fujiwara: "Direct determination of multiple exciton generation rate,"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (SemiconNano2019), O-10, Kobe, Japan, September 24-27 (2019).
J. Tatebayashi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: [Invited Talk] "Localized surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes with silver nanoparticles,"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures (SemiconNano2019), O-15, Kobe, Japan, September 24-27 (2019).
Y. Morioka, M. Uemukai, T. Tanikawa, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara, and R. Katayama: "Input focusing grating coupler for AlN deep UV waveguide SHG device,"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures (SemiconNano2019), P-22, Kobe, Japan, September 24-27 (2019).
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] Manipulation of Eu emission from GaN by control of photon fields toward micro-LED display,"
4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019), Hanoi, Vietnam, October 13-16 (2019).
D. Timmerman, E. Matsubara, L. Gomez, T. Gregorkiewicz, M. Ashida, and Y. Fujiwara: [Invited Talk] "Excitation dynamics and efficiency of luminescence of Eu in GaN,"
4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019), Hanoi, Vietnam, October 13-16 (2019).
Y. Fujiwara: [Invited Talk] "Development of semiconductors intracenter photonics: GaN-based red LED for monolithic micro-LED display,"
3rd IMS-INSD Joint Workshop on Frontier Nanomaterials, ¡ÈOpto-science and engineering using nanomaterials for fundamentals and applications,¡É Hanoi, Vietnam, October 17 (2019).
Y. Fujiwara: [Plenary Talk] "Development of semiconductors intracenter photonics: Eu-doped GaN-based red LED for monolithic micro-LED display,"
Display Innovation CHINA 2019/Beijing Summit, Beijing, China, October 22-23 (2019).
J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Observation of down-conversion behavior in ZnO:Tm,Yb/ZnO core-shell nanowires,"
9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), GR-1-3, OIST, Okinawa, Japan, November 10-15 (2019).
T. Nagata, M. Uemukai, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, T. Tanikawa, and R. Katayama: "Design and fabrication of GaN doubly-resonant waveguide microcavity SHG device,"
9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), OD1-3, OIST, Okinawa, Japan, November 10-15 (2019)
N. Yoshioka, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Demonstration of near-infrared light-emitting diodes with ultra-stable emission wavelength based on Tm-doped GaN,"
9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), OD2-3, OIST, Okinawa, Japan, November 10-15 (2019).
A. Yamauchi, T. Komatsu, K. Ikeda, K. Uesugi, K. Shojiki, H. Miyake, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama: "Design of deep ultraviolet second harmonic generation device with double-layer polarity-inverted AlN waveguide,"
9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), TuP-D-12, OIST, Okinawa, Japan, November 10-15 (2019).
D.Timmerman, M, Ashida, and Y. Fujiwara: "Excitation dynamics and efficiency of luminescence of Eu in GaN,"
9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), ThP-OD-3, OIST, Okinawa, Japan, November 10-15 (2019).
Y. Fujiwara: [Plenary Talk] "Development of semiconductors intracenter photonics: Eu-doped GaN-based red LED for monolithic micro-LED display,"
USM-Osaka University Joint Colloquium, Penang, Malaysia, November 26-27 (2019).