D. Timmerman, T. Iwaya, and Y. Fujiwara: "High-Q nanorod photonic crystal ring resonators,"
Optics Express 30 (2022) pp. 3488-3496. https://doi.org/10.1364/OE.443080
H. Austin, B. Mitchell, K. Ortiz, M. Waite, D. Timmerman, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers,"
Journal of Applied Physics 131 (2022)¡¡pp. 045701/1-7. https://doi.org/10.1063/5.0077223
R. Komai, S. Ichikawa, H. Hanzawa, J. Tatebayashi, and Y. Fujiwara: "Elucidation of excitation mechanism of Tb ions doped in AlxGa1-xN grown by OMVPE towards a wavelength-stable green emitter,"
Journal of Applied Physics 131 (2022) pp. 073102/1-7. https://doi.org/10.1063/5.0080269
A. Kiyoi, N. Kawabata, K. Nakamura, and Y. Fujiwara: "Annealing-temperature-dependent evolution of hydrogen-related donor and its strong correlation with X-photoluminescence center in proton-irradiated silicon,"
Journal of Applied Physics 131 (2022) pp. 125702/1-8. https://doi.org/10.1063/5.0083249
N. Yokoyama, R. Tanabe, Y. Yasuda, H. Honda, S. Ichikawa, Y. Fujiwara, T. Hikosaka, M. Uemukai, T. Tanikawa, and R. Katayama: "GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion,"
Japanese Journal of Applied Physics 61 (2022) pp. 050902/1-6. https://doi.org/10.35848/1347-4065/ac57ab
T. Nambu, T. Yano, S. Umeda, N. Yokoyama, H. Honda, Y. Tanaka, Y. Maegaki, Y. Mori, M. Yoshimura, S. Kobayashi, S. Ichikawa, Y. Fujiwara, R. Ishii, Y. Kawakami, M. Uemukai, T. Tanikawa, and R. Katayama: "DUV coherent light emission from ultracompact microcavity wavelength conversion device,"
Optics Express 30 (2022) pp. 18628-18637. https://doi.org/10.1364/OE.457538
T. Otabara, J. Tatebayashi, S. Hasegawa, D. Timmerman, S. Ichikawa, M. Ichimiya, M. Ashida, and Y. Fujiwara: "Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires grown by organometallic vapor phase epitaxy,"
Japanese Journal of Applied Physics 61 (2022) pp. SD1022/1/5. https://doi.org/10.35848/1347-4065/ac4e4c
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Improved Q-factors of III-nitride-based photonic crystal nanocavities by optical loss engineering,"
Optics Express 30 (2022) pp. 28853-28864. https://doi.org/10.1364/OE.460467
N. Yokoyama, Y. Morioka,T. Murata, H. Honda, K. Serita, H. Murakami,M. Tonouchi,
S. Tokita, S. Ichikawa, Y. Fujiwara, T. Hikosaka, M. Uemukai, T. Tanikawa, and
R. Katayama: "Second harmonic generation in GaN transverse quasi-phase-matched waveguide pumped with femtosecond laser,"
Applied Physics Express 15 (2022) pp. 112002/1-4. https://doi.org/10.35848/1882-0786/ac9511
S. Ichikawa: [Invited Talk] "Control of macrostep structures on vicinal (0001) GaN surfaces using Eu-doped GaN interlayers,"
3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity (IWSingularity 2022)/2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation (ISWGPDs 2022), S-15, Nagoya Congress Center/on-line, January 11-13 (2022).
J. Tatebayashi: [Invited Talk] "Exploration of semiconductor nanowire photonics towards advent of super smart societies,"
2022 ASEAN Joint Workshop, on-line, March 24 (2022).
T. Otabara, J. Tatebayashi, D. Timmerman, S. Ichikawa, M. Ichimiya, M. Ashida, and Y. Fujiwara: "Room temperature red luminescence from GaN:Eu/GaN core-shell nanowires,"
International Conference on Nano-photonics and Nano-optoelectronics 2022 (ICNN2022), ICNN2-02, Pacifico Yokohama Conference Center, Yokohama, Japan, April 18-22 (2022).
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Demonstration of a GaN-based high-Q (7900) H3 photonic crystal cavity in the red region,"
International Conference on Nano-photonics and Nano-optoelectronics 2022 (ICNN2022), ICNN2-05, Pacifico Yokohama Conference Center, Yokohama, Japan, April 18-22 (2022).
D. Timmerman, T. Iwaya, and Y. Fujiwara: "(Quasi-) 1D nanorod resonators,"
International Conference on Nano-photonics and Nano-optoelectronics 2022 (ICNN2022), ICNN2-06, Pacifico Yokohama Conference Center, Yokohama, Japan, April 18-22 (2022).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Eu-doped GaN-based red LEDs for next-generation micro-LED displays,"
2022 International Conference on Electronics Packaging (ICEP 2022), TA1-1, Sapporo Community Plaza, Hokkaido (Hybrid conference), May 11-13 (2022).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Eu-doped GaN-based red LEDs for micro-LED displays with extremely high resolution,"
29th Workshop on Active-Matrix Flatpanel Display and Devices -TFT Technologies and FPD Materials (AM-FPD 22), S2_2, Ryukoku University Avanti Kyoto Hall Kyoto, Kyoto, Japan (Hybrid conference), July 5-8 (2022).
R. Yamato, S. Ichikawa, A. Takeo, J. Tatebayashi, and Y. Fujiwara: "Drastically reduced compositional fluctuation and indium incorporation in InGaN QWs grown on vicinal substrates using Eu-doped GaN interlayers,"
9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX), WA1-3, Nagoya University, Nagoya, Japan, September 5-8 (2022).
S. Ichikawa, Y. Fujiwara, and K. Kojima: "Visualization of excited-electron relaxation in InGaN quantum wells using time-resolved two-photon photoemission spectroscopy,"
International Workshop on Nitride Semiconductors (IWN 2022), AT003, Berlin, Germany, October 9-14 (2022).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Towards Next-Generation Micro-LED Displays Using Eu-Doped GaN,"
International Workshop on Nitride Semiconductors (IWN 2022), IT15, Berlin, Germany, October 9-14 (2022).
S. Ichikawa, K. Shiomi, T. Morikawa, Y. Sasaki, D. Timmerman, J. Tatebayashi, and
Y. Fujiwara: "Monolithically-Stacked Tri-Colored LEDs towards Micro-LED Display with Eu-doped GaN and InGaN Layers,"
International Workshop on Nitride Semiconductors (IWN 2022), AT052, Berlin, Germany, October 9-14 (2022).
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Improved Q-factors (> 10000) of III-Nitride-Based Two-Dimensional Photonic Crystal Cavities in the Red Region,"
International Workshop on Nitride Semiconductors (IWN 2022), AT177, Berlin, Germany, October 9-14 (2022).
H. Honda, S. Umeda, K. Shojiki, H. Miyake, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, K. Serita, H. Murakami, M. Tonouchi, M. Uemukai, T. Tanikawa, and R. Katayama: "Second Harmonic Generation of 230 nm DUV Light from Transverse Quasi-Phase-Matched -c-AlN/+c-AlN Channel Waveguide,"
International Workshop on Nitride Semiconductors (IWN 2022), AT256, Berlin, Germany, October 9-14 (2022).
A. Takeo, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Control of highly efficient Eu luminescence centers and drastic intensity enhancement in Eu-doped GaN grown on semipolar (20-21) GaN,"
International Workshop on Nitride Semiconductors (IWN 2022), Berlin, Germany, PP292, October 9-14 (2022).
T. Otabara, J. Tatebayashi, T. Yoshimura, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Demonstration of GaN:Eu/GaN nanowire LEDs towards realization of flexible light-emitting devices,"
35th International Microprocesses and Nanotechnology Conference (MNC2022), 9D-4-1, Tokushima, Japan, November 8-11 (2022).
Z. Fang, J. Tatebayashi, H. Kajii, M. Kondow, and Y. Fujiwara: "Demonstration of nanobeam photonic crystal nanocavities with improved Q-factor based on Er,O-codoped GaAs,"
35th International Microprocesses and Nanotechnology Conference (MNC2022), 10P-3-2, Tokushima, Japan, November 8-11 (2022).
A. Takeo, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Drastic spectral narrowing and intensity enhancement of red emission from Eu-doped GaN grown on semipolar (20-21) GaN template,"
10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), OTC-04, COZZI Blu, Taoyuan, Taiwan, November 13-18 (2022).
D. Timmerman, T. Ishihara, D. Denier van der Gon, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Influence of carrier diffusion length on quantum efficiency of red-emitting Eu-doped GaN micro-structures,"
10th Asia-Pacific Workshop on Widegap Semiconductors (APWS 2022), OTC-11, COZZI Blu, Taoyuan, Taiwan, November 13-18 (2022).
D. Timmerman, T. Iwaya, and Y. Fujiwara:[Invited talk] "GaN based (quasi-) 1D nanorod photonic resonators,"
5th International Conference on Advanced Materials and Nanotechnology (ICAMN2022), I127, Hanoi, Vietnam, November 16-19 (2022).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Towards next-generation micro-LED displays using Eu-doped GaN,"
5th International Conference on Advanced Materials and Nanotechnology (ICAMN2022), I150, Hanoi, Vietnam, November 16-19 (2022).