B. Mitchell, D. Timmerman, J. Poplawsky, W. Zhu, D. Lee, R. Wakamatsu, J. Takatsu,
M. Matsuda, W. Guo, K. Lorenz, E. Alves, A. Koizumi, V. Dierolf, and Y. Fujiwara: "Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications"
Scientific Reports 6 (2016) pp. 8808/1-8. http://www.nature.com/articles/srep18808
H. Taguchi, S. Miyake, A. Suzuki, S. Kamiyama, and Y. Fujiwara: "Evaluation of crystallinity of GaN epitaxial layer after wafer dicing process"
Materials Science in Semiconductor Processing 41 (2016) pp. 89-91. http://www.sciencedirect.com/science/article/pii/S1369800115301190
M. Ishii, A. Koizumi, and Y. Fujiwara: "Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current"
Japanese Journal of Applied Physics 55 (2016) pp. 015801/1-4. http://iopscience.iop.org/article/10.7567/JJAP.55.015801
J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak: "Study of defects in GaN in situ doped with Eu3+ ion grown by OMVPE"
Journal of Electronic Materials 45 (2016) pp. 2001-2007. http://link.springer.com/article/10.1007/s11664-016-4337-4
T. Inaba, D. Lee, R. Wakamatsu, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, A. Koizumi, and Y. Fujiwara: "Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity"
AIP Advances 6 (2016) pp. 045105/1-6. http://dx.doi.org/10.1063/1.4946849
W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara: "Enhanced photo/electroluminescence properties of GaN:Eu through optimization of the growth conditions and defect environment"
APL Materials (2016). http://dx.doi.org/10.1063/1.4950826
I. Fragkos, C. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu: "Rare-earth-doped GaN-based light-emitting diode: a model of current injection efficiency"
SPIE Photonics West, 9742-5, San Francisco, California, USA, February 13-18 (2016).
Y. Fujiwara, T. Nunokawa, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi: [Invited Talk]: "Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy"
Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials, I-21, Osaka University, Osaka, Japan, March 25-26 (2016).
T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara: "Significant enhancement of photoluminescence intensity from Eu-doped GaN embedded in resonant cavity"
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), TuP24, Todaiji Temple Cultural Center, Nara, Japan, March 28-31 (2016).
T. Kojima, K. Sakuragi, M. Ogawa, N. Fujioka, A. Koizumi, S. Noda, and Y. Fujiwara: "Emission properties of Er ions in GaAs modulated by photonic crystal nanocavities"
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), TuP27, Todaiji Temple Cultural Center, Nara, Japan, March 28-31 (2016).
Y. Kashiwagi, M. Saitoh, T. Hasegawa, K. Matsukawa, T. Shigemune, A. Koizumi,T. Kojima, Y. Fujiwara, H. Kakiuchi, N. Aoyagi, Y. Yoshida, and M. Nakamoto: [Invited Talk]: "Direct electrode patterning on layered GaN on sSapphire substrate by using needle-type dispenser system of Ag nanoinks"
2016 International Conference on Electronics Packaging (ICEP2016), TB3-2, Sapporo, Japan, April 20-22 (2016).
Y. Fujiwara, W. Zhu, B. Mitchell, D. Timmerman, Uedono, and A. Koizumi: [Invited Talk]: "Enhanced red photo/electroluminescence from Eu-doped GaN through optimization of defect environment"
Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi: [Invited Talk]: "Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN"
Y. Fujiwara, T. Inaba, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, and A. Koizumi: [Invited Talk]: "Enhanced red emission from Eu ions embedded in a GaN resonant optical microcavity"
Collaborative Conference on 3D and Materials Research 2016 (CC3DMR2016), Incheon, Seoul, Korea, June 20-24 (2016).
J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak: "Deep level transient spectroscopy study of Eu3+ ion in situ doped GaN epilayer grown by OMVPE"
58th Electronic Materials Conference, PS5, Newark, USA, June 22-24 (2016).
Y. Fujiwara: [Invited Talk]: "Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer"
Light Conference 2016, Changchun, China, July 4-8 (2016).
A. Koizumi and Y. Fujiwara: [Invited Talk]: "Current understanding of Eu emission centers in Eu-doped GaN grown by organometallic vapor phase epitaxy"
9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9), Kyoto, Japan, August 1-5 (2016).
J. Takatsu, A. Koizumi, S. Yamanaka, M. Matsuda, T. Kojima, and Y. Fujiwara: "Using Eu emission to detect In segregation in InxGa1-xN"
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Tu3-T09-6, Nagoya, Japan, August 7-12 (2016).
R. Fuji, A. Koizumi, T. Inaba, and Y. Fujiwara: "N-polar Eu-doped GaN grown by organometallic vapor phase epitaxy"
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), TuP-T09-21, Nagoya, Japan, August 7-12 (2016).
W. Zhu, M. Ishii, A. Koizumi, Y. Fujiwara: "Relationship between electrical and luminescence properties of GaN/Eu-doped GaN multiple-nanolayer structures investigated with impedance spectroscopy"
M. Ogawa, T. Kojima, K. Sakuragi, N. Fujioka, A. Koizumi and Y. Fujiwara: "Emission properties of Er3+ ions in GaAs modulated by photonic crystal cavities"
T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara: "Controlling emission properties of Eu-doped GaN by microcavity"
H. Kogame, K. Okada, T. Kojima, A. Koizumi, and Y. Fujiwara: "Investigation on energy transfer process in Eu-doped GaN by two-wavelength excited photoluminescence measurements"
T. Nunokawa, A. Koizumi, M. Matsuda, W. Zhu, and Y. Fujiwara: "Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy"
H. Kamei, S. Takano, G. Yoshii, T. Kojima, A. Koizumi, and Y. Fujiwara: "Controllable energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted MOCVD"