Dong-gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, Jonathan D. Poplawsky, Volkmar Dierolf, and Yasufumi Fujiwara: "Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy"
Applied Physics Letters 102 (2013) pp. 141904/1-4. http://dx.doi.org/10.1063/1.4800447
Dong-gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara: "Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN"
Japanese Journal of Applied Physics 52 (2013) 08JM01/1-4. http://dx.doi.org/10.7567/JJAP.52.08JM01
Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Volkmar Dierolf, Yoshikazu Terai, and Yasufumi Fujiwara: "Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate"
Japanese Journal of Applied Physics 52 (2013) 08JM03/1-5. http://dx.doi.org/10.7567/JJAP.52.08JM03
B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, and V. Dierolf: "Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe"
Physical Review B 88 (2013) 121202(R)/1-5. http://link.aps.org/doi/10.1103/PhysRevB.88.121202
Takahiro Tsuji, Yoshikazu Terai, Muhammad Hakim Bin Kamarudin, and Yasufumi Fujiwara: "Formation of Eu3+ Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition"
Japanese Journal of Applied Physics 52 (2013) 111101. http://jjap.jsap.jp/link?JJAP/52/111101/
B. Mitchell, D. Lee, D. Lee, Y. Fujiwara, and V. Dierolf: "Vibrationally induced center reconfiguration in co-doped GaN:Eu,Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels"
Applied Physics Letters 103 (2013) 242105/1-4. http://scitation.aip.org/content/aip/journal/apl/103/24/10.1063/1.4846575
Y. Kashiwagi, A. Koizumi, Y. Takemura, S. Furuta, M. Yamamoto, M. Saitoh, M. Takahashi, T. Ohno, Y. Fujiwara, K. Murahashi, K. Ohtsuka, M. Nakamoto: "Transparent Conductive Oxide Patterning on GaN Substrate by Screen Printing with Nanoparticle Pastes"
International Conference on Electronics Packaging 2013 (ICEP 2013), TB2-1, Osaka International Convention Center, Osaka, Japan, April 10-12, 2013.
Dong-gun Lee, Masaaki Matsuda, Ryuta Wakamatsu, Atsushi Koizumi, and Yasufumi Fujiwara: "Site-selective formation of Eu luminescent centers by oxygen codoping in Eu-doped GaN"
The 40th International Symposium on Compound Semiconductors (ISCS 2013), TuA1-6, Kobe Convention Center, Kobe, Japan, May 19-23, 2013.
Y. Fujiwara and A. Koizumi: "Eu-doped GaN and its application to nitride-based red light-emitting diodes"
Collaborative Conference on 3D & Materials Research (CC3DMR) 2013, Jeju, Korea, June 24-28 (2013).
Y. Fujiwara and A. Koizumi: [Invited talk] "Development of properties and functionalities by precise control of rare earth doping"
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, August 11-16 (2013).
R. Okada, W. Miao, Y. Terai, T. Tsuji, and Y Fujiwara: "Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells"
The 16th International Conference on II-VI Compound and Related Materials (II-VI 2013), Mo-A5, Nagahama, Japan, September 9-13 (2013).
Hideyuki Taguchi, Amane Kitahara, Syugo Miyake, Akimitsu Nakaue, and Yasufumi Fujiwara: "Analysis of Crystalline in GaN Epitaxial Layer after the Wafer Dicing Process"
2013 JSAP-MRS Joint Symposia Symposium I, 16p-PM1-8, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Atsushi Koizumi, Ryousuke Hasegawa, Ryuta Wakamatsu, Takehiro Tamaoka and Yasufumi Fujiwara: "Controlled Formation of Semipolar {n-n01} GaN Facets by Eu Doping in Organometallic Vapor Phase Epitaxy"
2013 JSAP-MRS Joint Symposia Symposium I, 16p-PM1-28, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Yasufumi Fujiwara and Hitoshi Ohta: "Cooperative behaviors between erbium ions codoped with oxygen in GaAs"
2013 JSAP-MRS Joint Symposia Symposium H, 18a-M4-1, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Dong-gun Lee, Masaaki Matsuda, Ryuta Wakamatsu, Atsushi Koizumi, and Yasufumi Fujiwara: "Doping and luminescence characteristics of Eu,Ocodoped GaN grown by organometallic vapor phase epitaxy"
2013 JSAP-MRS Joint Symposia Symposium I, 18p-PM2-1, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, and Yasufumi Fujiwara: "Luminescence properties of Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy"
2013 JSAP-MRS Joint Symposia Symposium I, 18p-PM2-2, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Atsushi Koizumi, Dong-gun Lee, Ryuta Wakamatsu, and Yasufumi Fujiwara: "Recent Progress of Eu-Doping to GaN by Organometallic Vapor Phase Epitaxy"
2013 JSAP-MRS Joint Symposia Symposium I, 19a-M5-1, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Wieteke D.A.M. deBoer, Chiron McGonigle, Yasufumi Fujiwara, Hong Zhang, Wybren J. Buma, Katerina Dohnalova, and Tom Gregorkiewicz: "Optical characterization Eu-doped GaN layers grown by OMVPE"
2013 JSAP-MRS Joint Symposia Symposium I, 19a-M5-2, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Vyacheslav Kachkanov, Kevin O'Donnell, Gerrit van der Laan, and Yasufumi Fujiwara: "Induced magnetic moment of Eu3+ ions in GaN"
2013 JSAP-MRS Joint Symposia Symposium I, 19p-M5-2, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Volkmar Dierolf, and Yasufumi Fujiwara: "Distribution of luminescent sites in Eu-doped GaN grown on GaN and sapphire substrates by organometallic vapor phase epitaxy"
2013 JSAP-MRS Joint Symposia Symposium I, 19a-M5-3, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Hironori Ofuchi, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Tetsuo Honma, and Yasufumi Fujiwara: "Fluorescence XAFS analysis for Eu-doped GaN layers by organometallic vapor phase epitaxy using a new Eu precursor bis(npropyltetramethylcyclopentadienyl)europium"
2013 JSAP-MRS Joint Symposia Symposium I, 19a-M5-4, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Brandon Mitchell, D. Lee, R. Wakamatsu, A. Koizumi, Yasufumi Fujiwara, and Volkmar Dierolf: "Modification of Eu Incorporation Sites Induced by Electron Beam Irradiation in Eu and Mg co-doped GaN"
2013 JSAP-MRS Joint Symposia Symposium I, 19a-M5-5, Doshisha University, Kyoto, Japan, September 16-20, 2013.
Hitoshi Ohta, Fatma Elmasry, Weimin Zhang, Yohei Fukuoka, Susumu Okubo, and Yasufumi Fujiwara: "Photoluminescent Material GaAs:Er,O Studied by ESR"
2013 JSAP-MRS Joint Symposia Symposium I, 19p-M5-4, Doshisha University, Kyoto, Japan, September 16-20, 2013.
T. Arai, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara: "Enhancement of red luminescence intensity in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy"
R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara: "Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites"
