研究成果/2011年の変更点 - Fujiwara Laboratory HP

追加された行はこの色です。
削除された行はこの色です。
研究成果/2011年へ行く。
研究成果/2011年の差分を削除
//古いもの順

*研究成果 2011年 [#wc081174]
**論文・プロシーディングス [#le5eadfa]
***査読付き [#u327b6c7]

-N. Furukawa, A. Nishikawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:&br;
&color(blue){"Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy"};&br;
Physica Status Solidi A ''208''(2) (2011) pp. 445-448. &br;
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201000598/abstract &br;
//[ [[PDF:http://onlinelibrary.wiley.com/doi/10.1002/pssa.201000598/pdf]] ]


-Y. Terai, K. Yoshida, M. H. Kamarudin, and Y. Fujiwara:&br;
&color(blue){"Photoluminescence properties of Eu&super{3+}; ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"};&br;
Physica Status Solidi C ''8''(2) (2011) pp. 519-521.&br;
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000468/abstract
//[ [[PDF:http://onlinelibrary.wiley.com/doi/10.1002/pssc.201000468/pdf]] ]


-H. Ofuchi, T. Honma, A. Nishikawa, N. Furukawa, T. Kawasaki, and Y. Fujiwara:&br;
&color(blue){"Fluorescence EXAFS analysis of Eu-doped GaN layers grown by organometallic vapor phase epitaxy"};&br;
e-Journal of Surface Science and Nanotechnology ''9'' (2011) pp. 51-53.&br;
https://www.jstage.jst.go.jp/article/ejssnt/9/0/9_0_51/_pdf
//[ [[PDF:https://www.jstage.jst.go.jp/article/ejssnt/9/0/9_0_51/_pdf]] ]


-N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf:&br;
&color(blue){"Excitation of Eu&super{3+}; in gallium nitride epitaxial layers: Majority versus trap defect center"};&br;
Applied Physics Letters ''98''(1) (2011) pp. 011102/1-3.&br;
http://apl.aip.org/resource/1/applab/v98/i1/p011102_s1


-K. Noda, Y. Terai, K. Yoneda, and Y. Fujiwara:&br;
&color(blue){"Temperature dependence of direct transition energies in &beta;-FeSi&subsc{2}; epitaxial films on Si(111) substrate"};&br;
Physics Procedia ''11'' (2011) pp. 181-184. &br;
http://www.sciencedirect.com/science/article/pii/S1875389211000253
//[ [[LINK:http://www.sciencedirect.com/science/article/pii/S1875389211000253]] ]


-K. Yoneda, Y. Terai, K. Noda, N Miura, and Y. Fujiwara:&br;
&color(blue){"Photoluminescence and photoreflectance studies in Si/&beta;-FeSi&subsc{2};/Si(001) double heterostructure"};&br;
Physics Procedia ''11'' (2011) pp. 185-188.&br;
http://www.sciencedirect.com/science/article/pii/S1875389211000265


-M. Fujisawa, A. Asakura, F. Elmasry, S. Okubo, H. Ohta, and Y. Fujiwara:&br;
"&color(blue){ESR study of photoluminescent material GaAs:Er,O -Er concentration effect};"&br;
Journal of Applied Physics ''109''(5) (2011) pp. 053910/1-5.&br;
http://jap.aip.org/resource/1/japiau/v109/i5/p053910_s1


-N. Woodward, A. Nishikawa, Y. Fujiwara, and V. Dierolf:&br;
"&color(blue){Site and sample dependent electron-phonon coupling of Eu ions in epitaxial-grown GaN layers};"&br;
Optical Materials ''33''(7) (2011) pp. 1050-1054.&br;
http://www.sciencedirect.com/science/article/pii/S0925346710004155


-A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:&br;
"&color(blue){Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy};"&br;
Optical Materials ''33''(7) (2011) pp. 1071-1074.&br;
http://www.sciencedirect.com/science/article/pii/S0925346710004404


-H. Katsuno, H. Ohta, O. Portugall, N.s Ubrig, M. Fujisawa, F. Elmasry, S. Okubo, and Y. Fujiwara:&br;
"&color(blue){Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement};"&br;
Journal of Luminescence ''131'' (2011) pp. 2294-2298.&br;
http://www.sciencedirect.com/science/article/pii/S0022231311002985


-K. Hatasako, F. Yamamoto, A. Uenishi, T. Kuroi, S. Maegawa, and Y. Fujiwara:&br;
"ESD Robustness Improvement for Integrated DMOS Transistor - The different gate voltage dependence of It2 between VDMOS and LDMOS transistors-"&br;
IEEJ Transactions on Electrical and Electronic Engineering ''6'' (2011) pp. 361-366.&br;
http://onlinelibrary.wiley.com/doi/10.1002/tee.20669/abstract


-Y. Terai, K. Noda, K. Yoneda, H. Udono, Y. Maeda, and Y. Fujiwara:&br;
"Bandgap modifications by lattice deformations in &beta;-FeSi&subsc{2}; epitaxial films"&br;
Thin Solid Films ''519'' (2011) pp. 8468-8472.
http://www.sciencedirect.com/science/article/pii/S0040609011011539


-K. Kadoiwa, H. Sasaki, Y. Terai, and Y. Fujiwara:&br;
"Improvement of crystalline quality in GaAs layer grown on thermal cyclic annealed SOS"&br;
Journal of the Society of Materials Science, Japan 60(11) (2011) pp.998-1003.&br;
門岩薫、佐々木肇、寺井慶和、藤原康文：&br;
"熱サイクルアニールを適用したSOS(Si-on-Sapphire)基板上GaAsエピタキシャル
結晶成長層の品質改善"&br;
材料 ''60''(11) (2011) pp. 998-1003.

-A. Nishikawa, N. Furukawa, D. Lee, K. Kawabata, T. Matsuno, R. Harada, Y. Terai, and 
Y. Fujiwara:&br;
"Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy"&br;
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 9-13.&br;
http://dx.doi.org/10.1557/opl.2011.994


-S. Emura, K. Higashi, A. Itatani, H. Torigoe, Y. Kuroda, A. Nishikawa, Y. Fujiwara, and Hajime Asahi:&br;
"Photoluminescence x-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy"&br;
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 15-20.&br;
http://dx.doi.org/10.1557/opl.2011.1241


-J. Poplawsky, N. Woodward, A. Nishikawa, Y. Fujiwara, and V. Dierolf:&br;
"Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy"&br;
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 21-26.&br;
http://dx.doi.org/10.1557/opl.2011.1049


-N. Woodward, A. Nishikawa, Y. Fujiwara, and V. Dierolf:&br;
"Site selective magneto-optical studies of Eu ions in gallium nitride"&br;
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1432, edited by V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak (Materials Research Society, Pennsylvania, 2011) pp. 111-115.&br;
http://dx.doi.org/10.1557/opl.2011.1156


-西川敦、寺井慶和、藤原康文：&br;
"OMVPE法により作製したEu添加GaNの発光特性及び赤色発光ダイオードへの応用"&br;
日本結晶成長学会誌 ''38''(4) (2011) pp. 270-273.&br;
http://ci.nii.ac.jp/naid/110009327765






**国際会議発表 [#h9a7fbef]

-Y. Fujiwara, A. Nishikawa, and Y. Terai: [Invited talk]&br;
"Present status and prospect of red light-emitting diodes with Eu-doped GaN"&br;
5th International Conference on LED and Solid State Lighting (LED 2011), Seoul, Korea, April 11-12 (2011).

-Y. Terai, T. Tsuji, M. H. Kamarudin, and Y. Fujiwara: [Invited talk]&br;
"Luminescence properties of Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
2011 Materials Research Society Spring Meeting, ''V2.1'', San Francisco, USA, April 28-29 (2011).

-A. Nishikawa, N. Furukawa, D. Lee, K. Kawabata, T. Matsuno, R. Harada, Y. Terai, and 
Y. Fujiwara:&br;
"Bright red emission from Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy"&br;
2011 Materials Research Society Spring Meeting, ''V2.8'', San Francisco, USA, April 28-29 (2011).

-N. N. Ha, W. D. Boer, T. Gregorkiewicz, A. Nishikawa, and Y. Fujiwara:&br;
"Investigations of the 620 nm emission band from Eu&super{3+};-doped GaN structures grown by organometallic vapor phase epitaxy"&br;
2011 Materials Research Society Spring Meeting, ''V3.1'', San Francisco, USA, April 28-29 (2011).

-S. Emura, K. Higashi, A. Itatani, H. Torigoe, Y. Kuroda, A. Nishikawa, Y. Fujiwara, and 
H. Asahi:&br;
"Photoluminescence X-ray Excitation Spectra in Eu-doped GaN Grown by Organometallic Vapor Phase Epitaxy"
2011 Materials Research Society Spring Meeting, ''V3.2'', San Francisco, USA, April 28-29 (2011).

-W. D. Boer, T. Gregorkiewicz, S. Tanabe, A. Nishikawa, and Y. Fujiwara:&br;
"Optical activity of Eu&super{3+}; in GaN:Eu for light emitting devices"
2011 Materials Research Society Spring Meeting, San Francisco, USA, ''V3.3'', April 28-29 (2011).

-J. Poplawsky, N. Woodward, B. Mitchell, V. Dierolf, A. Nishikawa, and Y. Fujiwara:&br;
"Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometalic vapor-phase epitaxy"&br;
2011 Materials Research Society Spring Meeting, ''V3.4'', San Francisco, USA, April 28-29 (2011).

-Y. Fujiwara, A. Nishikawa, N. Furukawa, D-G. Lee, K. Kawabata, and Y. Terai:&br;
"Improved performance of red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy"&br;
9th International Conference on Nitride Semiconductors, ''F4.8'', Glasgow, UK, July 10-15 (2011).

-T. Tsuji, Y. Terai, M. H. Kamarudin, M. Kawabata, and Y. Fujiwara:&br;
"Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"&br;
24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS24), ''1B2-3'', Nara, Japan, August 21-26 (2011).

-D. Lee, A. Nishikawa, N. Furukawa, K. Kawabata, Y. Terai, and Y. Fujiwara:&br;
"Enhancement of Eu3+ luminescence intensity in Eu-doped GaN by Mg codoping"&br;
24th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS24), ''2C4-4'', Nara, Japan, August 21-26 (2011).

-Y. Terai, K. Noda, K. Yoneda, Y. Maeda, and Y. Fujiwara:&br;
"Photoreflectance and time-resolved photoluminescence studies in ion-beam synthesized &beta;-FeSi&subsc{2};"&br;
Asian School-Conference on Physics and Technology of Nanostructured Materials, ''III.26.06'', Vladivostok, Russia, August 21-28 (2011).

-K. Noda, Y. Terai, K. Yoneda, N. Miura, K. Katayama, H. Udono, and Y. Fujiwara:&br;
"Growth condition dependence of direct bandgap in &beta;-FeSi&subsc{2}; epitaxial films grown by molecular beam epitaxy"&br;
Asian School-Conference on Physics and Technology of Nanostructured Materials, ''III.26.07'', Vladivostok, Russia, August 21-28 (2011).

-H. Ohta, S. Okubo, W.-M. Zhang, M. Fujisawa, Y. Fukuoka, F. Elmasry, and Y. Fujiwara:&br;
"Electron spin resonance study of highly Er doped photoluminescent material GaAs:Er,O"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''I3'', Warsaw, Poland, September 18-23 (2011).

-W.D.A.M. de Boer, T. Gregorkiewicz, S. Tanabe, A. Nishikawa, and Y. Fujiwara:&br;
"Optical activity of Eu3+ in GaN:Eu for light emitting devices"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''II4'', Warsaw, Poland, September 18-23 (2011).

-N. N. Ha, K. Dohnalova, T. Gregorkiewicz, A. Nishikawa, and Y. Fujiwara:&br;
"Investigations of stimulated emission in Er- and Eu-doped GaN"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''IV3'', Warsaw, Poland, September 18-23 (2011).

-A. Nishikawa, H. Ofuchi, N. Furukawa, D. Lee, K. Kawabata, T. Matsuno, Y. Terai, T. Honma, and Y. Fujiwara:&br;
"Effect of V/III ratio on luminescence and structural properties in Eu-doped GaN grown by organometallic vapor phase epitaxy"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''IV4'', Warsaw, Poland, September 18-23 (2011).

-H. Ofuchi, K. Kawabata, A. Nishikawa, D. Lee, N. Furukawa, Y. Terai, T. Honma, and Y. Fujiwara:&br;
"Fluorescence XAFS analysis on Eu-doped AlGaN layer grown by organometallic vapor phase epitaxy by organometallic vapor phase epitaxy"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''VII1'', Warsaw, Poland, September 18-23 (2011).

-J. Poplawsky, A. Nishikawa, Y. Fujiwara, and V. Dierolf:&br;
"Combined Excitation Experiment and the Emission Nature of Eu in GaN"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''VII2'', Warsaw, Poland, September 18-23 (2011).

-D. Lee, A. Nishikawa, N. Furukawa, R. Wakamatsu, Y. Terai, and Y. Fujiwara:&br;
"Enhanced emission of Eu&super{3+}; ions in Eu in-situ doped GaN by Mg codoping"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''VII3'', Warsaw, Poland, September 18-23 (2011).&br;

-T. Tsuji, Y. Terai, M. H. Kamarudin, K. Yoshida, and Y. Fujiwara:&br;
"Eu concentration dependence of Eu&super{3+}; emission in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"&br;
2011 European Materials Research Society Fall Meeting (E-MRS2011), ''VIII3'', Warsaw, Poland, September 18-23 (2011).

-S. Furumiya and Y. Fujiwara:&br;
"Phase-change recording film applied laser pulse compensation to form nano-sized marks"&br;
15th International Conference on Thin Films (ICTF-15), ''O-S12-07'', Kyoto Terrsa, Kyoto, Japan, November 8-11 (2011).

-H. Taguchi, A. Kitahara, S. Miyake, A. Nakaue, A. Nishikawa, and Y. Fujiwara:&br;
"Dislocation generation in GaN by dicing process"&br;
15th International Conference on Thin Films (ICTF-15), ''P-S12-02'', Kyoto Terrsa, Kyoto, Japan, November 8-11 (2011).

-R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara:&br;
"Time-resolved photoluminescence study of Eu-doped GaN grown by organometallic vapor phase epitaxy"&br;
15th International Conference on Thin Films (ICTF-15), ''P-S12-05'', Kyoto Terrsa, Kyoto, Japan, November 8-11 (2011).

-T. Tsuji, Y. Terai, M. H. Kamarudin, and Y. Fujiwara:&br;
"Effects of Cu co-doping on photoluminescence properties in Eu-doped ZnO"&br;
7th Handai Nanoscience and Nanotechnology International Symposium, ''PH-21'', Icho-Kaikan, Osaka University, Osaka, Japan, November 10-11 (2011).

-K. Noda, Y. Terai, and Y. Fujiwara:&br;
"Dependence of direct bandgap energies on growth condition in &beta;-FeSi&subsc{2}; epitaxial films on Si(001) substrate"&br;
7th Handai Nanoscience and Nanotechnology International Symposium, ''PH-38'', Icho-Kaikan, Osaka University, Osaka, Japan, November 10-11 (2011).

-R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara:&br;
"Excitation behavior of the anomalous peak in Eu-doped gallium nitride;&br;
7th Handai Nanoscience and Nanotechnology International Symposium, ''PH-39'', Icho-Kaikan, Osaka University, Osaka, Japan, November 10-11 (2011).

-A. Nishikawa, N. Furukawa, D. Lee, R. Wakamatsu, T. Matsuno, Y. Terai, and 
Y. Fujiwara:&br;
"Thermal quenching behavior of luminescence peaks in Eu-doped GaN"&br;
International Symposium on Materials Science and Innovation for Sustainable Society &#8211;Eco-Materials and Eco-Innovation for Global Sustainability&#8212; (ECO-MATES 2011), ''CSI-2'', Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).&br;

-R. Wakamatsu, A. Nishikawa, D. Lee, Y. Terai, and Y. Fujiwara:&br;
"Anomalous luminescence peak in Eu-doped GaN grown by organometallic vapor phase epitaxy"&br;
International Symposium on Materials Science and Innovation for Sustainable Society &#8211;Eco-Materials and Eco-Innovation for Global Sustainability- (ECO-MATES 2011), ''PT3-9'', Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).

-D. Lee, A. Nishikawa, N. Furukawa, R. Wakamatsu, Y. Terai, and Y. Fujiwara:&br;
"Temperature dependence of luminescence properties in Eu,Mg-codoped GaN"&br;
International Symposium on Materials Science and Innovation for Sustainable Society &#8211;Eco-Materials and Eco-Innovation for Global Sustainability&#8212; (ECO-MATES 2011), ''PT3-15'', Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).

-T. Tsuji, Y. Terai, M. H. Kamarudin, and Y. Fujiwara:&br;
"Growth of rare-earth doped ZnO by sputtering-assisted metalorganic chemical vapor deposition"&br;
International Symposium on Materials Science and Innovation for Sustainable Society &#8211;Eco-Materials and Eco-Innovation for Global Sustainability&#8212; (ECO-MATES 2011), ''PT3-16'', Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).

-K. Noda, Y. Terai, and Y. Fujiwara:&br;
"Investigation of direct bandgap energies of &beta;-FeSi&subsc{2}; epitaxial films by photoreflectance"&br;
International Symposium on Materials Science and Innovation for Sustainable Society &#8211;Eco-Materials and Eco-Innovation for Global Sustainability&#8212; (ECO-MATES 2011), ''PT3-30'', Hotel Hankyu Expo Park, Osaka, Japan, November 28-30 (2011).

-Y. Fujiwara, A. Nishikawa, and Y. Terai: [Invited talk]&br;
"Recent Progress in Red Light-Emitting Diodes with Eu-Doped GaN"
18th International Display Workshops 2011 (IDW2011), ''PH2-2'', Nagoya Congress Center, Nagoya, Japan, December 7-9 (2011).



**国内会議発表 [#aabb7061]

-三浦直行、寺井慶和、米田圭佑、野田慶一、藤原康文：&br;
"低残留キャリア濃度&beta;-FeSi&subsc{2};エピタキシャル膜における電気特性の温度依存性"&br;
第72回応用物理学会学術講演会、1p-W-6, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-野田慶一、寺井慶和、三浦直行、鵜殿治彦、藤原康文：&br;
"&beta;-FeSi&subsc{2};エピタキシャル膜における直接遷移エネルギーの成長条件依存性"&br;
第72回応用物理学会学術講演会、1p-W-7, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-寺井慶和、野田慶一、三浦直行、前田佳均、藤原康文：&br;
"IBS &beta;-FeSi&subsc{2};における1.5 &micro;m発光の寿命評価"&br;
第72回応用物理学会学術講演会、1p-W-8, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-Bin Kamarudin Muhammad Hakim、寺井慶和、辻尭宏、藤原康文：&br;
"Eu,N共添加ZnOにおけるEu3+発光への窒素添加効果"&br;
第72回応用物理学会学術講演会、1p-P11-8, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-辻尭宏、寺井慶和、ビン・カマルディン・ムハマド・ハキム、藤原康文：&br;
"Eu添加ZnOにおける不純物共添加効果の検証"&br;
第72回応用物理学会学術講演会、1p-P11-9, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-李東建、西川敦、古川直樹、若松龍太、寺井慶和、藤原康文：&br;
"Mg, Eu共添加GaNにおけるEu発光の温度依存性"&br;
第72回応用物理学会学術講演会、1p-P11-10, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-古川直樹、西川敦、李東建、若松龍太、寺井慶和、藤原康文：&br;
"Eu添加GaNにおけるEu発光の温度消光特性"&br;
第72回応用物理学会学術講演会、1p-P11-11, 山形大学小白川キャンパス、山形市、9月1日 (2011).

-川溿昂佑、西川敦、李東建、寺井康和、藤原康文：&br;
"Eu添加AlxGa1-xNにおけるEu発光特性のAl組成依存性"&br;
第72回応用物理学会学術講演会、1p-P11-18, 山形大学小白川キャンパス、山形市、9月1日 (2011).


-野田慶一、寺井慶和、高石洋輔、伊藤博介、鵜殿治彦、藤原康文&br;
"第一原理計算による&beta;-FeSi&subsc{2};直接遷移端変化の検証"&br;
第59回応用物理学関係連合講演会、16p-E1-4、早稲田大学 早稲田キャンパス、東京都新宿区、3月16日 (2012).

-寺井慶和、三浦直行、野田慶一、藤原康文&br;
"低残留キャリア濃度&beta;-FeSi&subsc{2};エピタキシャル膜における磁気抵抗"&br;
第59回応用物理学関係連合講演会、16p-E1-5、早稲田大学 早稲田キャンパス、東京都新宿区、3月16日 (2012).

-辻尭宏、寺井慶和、苗偉、畑岸幸浩、藤原康文&br;
"Eu,Au共添加ZnOにおけるEu&super{3+};発光特性"&br;
第59回応用物理学関係連合講演会、17p-E2-7、早稲田大学 早稲田キャンパス、東京都新宿区、3月17日 (2012).

-苗偉、寺井慶和、辻尭宏、Wei Cao、藤原康文&br;
"Yb添加ZnO薄膜の作製とその発光特性の評価"&br;
第59回応用物理学関係連合講演会、17p-E2-9、早稲田大学 早稲田キャンパス、東京都新宿区、3月17日 (2012).

-李東建、西川敦、若松龍太、寺井慶和、藤原康文&br;
"Eu,Mg,Si共添加GaNにおけるEu発光の温度消光抑制"&br;
第59回応用物理学関係連合講演会、17p-E2-13、早稲田大学 早稲田キャンパス、東京都新宿区、3月17日 (2012).

-若松龍太、李東建、西川敦、寺井慶和、藤原康文&br;
"Eu添加GaNにおける特異なピークの発光特性と励起メカニズム"&br;
第59回応用物理学関係連合講演会、17p-E2-14、早稲田大学 早稲田キャンパス、東京都新宿区、3月17日 (2012).




**研究会 [#u14ff2cd]

-K. Kawabata, A. Nishikawa, D. Lee, N. Furukawa, Y. Terai, and Y. Fujiwara:&br;
"Eu luminescence properties in Eu-doped Al&subsc{x};Ga&subsc{1-x};N grown by organometallic vapor phase epitaxy"&br;
30th Electronic Materials Symposium, Th2-13, pp. 121-122,
ラフォーレ琵琶湖、守山市、6月30日 (2011).

-K. Noda, Y. Terai, K. Yoneda, N. Miura, and Y. Fujiwara:&br;
"Growth condition dependence of direct bandgap energies in &beta;-FeSi&subsc{2}; epitaxial films grown by molecular beam epitaxy"&br;
30th Electronic Materials Symposium, Th4-12, pp. 213-214, ラフォーレ琵琶湖、守山市、6月30日 (2011).

-李東建、小泉淳、西川敦、寺井慶和、藤原康文&br;
"Eu添加GaNにおけるEu発光への不純物共添加効果"&br;
日本材料学会半導体エレクトロニクス部門委員会 平成23年度第2回研究会、A02、京都工芸繊維大学、京都市、3月24日 (2012).

-Y. Fujiwara, K. Kawabata, H. Ofuchi, D. Lee, A. Koizumi, A. Nishikawa, Y. Terai, and T. Honma&br;
"Eu luminescence properties in Eu-doped Al&subsc{x};Ga&subsc{1-x};N grown by organometallic vapor phase epitaxy"&br;
4th International Workshop on Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE'12), O-32, Shiran-Kaikan, Kyoto University, Kyoto, Japan, March 28-30 (2012).

**解説等 [#kbc0e269]

-藤原康文:&br;
"キド・ワールドの創成を夢見て,"&br;
JRCMニュース　第297号 (2011) p. 1.&br;
http://www.jrcm.or.jp/jrcmnews/1107jn297.pdf


-藤原康文:&br;
"希土類添加半導体の新展開,&br;
マテリアルインテグレーション　第24巻　第10号 (2011) pp. 18-22.&br;
http://ci.nii.ac.jp/naid/40019077555