研究成果/2013年の変更点 - Fujiwara Laboratory HP

追加された行はこの色です。
削除された行はこの色です。
研究成果/2013年へ行く。
研究成果/2013年の差分を削除
//古いもの順、新しいものは下に書く。

*研究成果 2013年 [#y150de9e]
**論文・プロシーディングス [#e3f36d23]
***査読付き [#w0ad3608]

//#208
-Dong-gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, Jonathan D. Poplawsky, Volkmar Dierolf, and Yasufumi Fujiwara:&br;
&color(blue){''"Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy"''};&br;
Applied Physics Letters ''102'' (2013) pp. 141904/1-4.&br;
http://dx.doi.org/10.1063/1.4800447

//#209
-Dong-gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara:&br;
&color(blue){''"Control of Eu Luminescence Centers by Codoping of Mg and Si into Eu-Doped GaN"''};&br;
Japanese Journal of Applied Physics ''52'' (2013) 08JM01/1-4.&br;
//http://jjap.jsap.jp/link?JJAP/52/08JM01/
http://dx.doi.org/10.7567/JJAP.52.08JM01

//#210
-Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Volkmar Dierolf, Yoshikazu Terai, and Yasufumi Fujiwara:&br;
&color(blue){''"Luminescence Properties of Eu-Doped GaN Grown on GaN Substrate"''};&br;
Japanese Journal of Applied Physics ''52'' (2013) 08JM03/1-5.&br;
//http://jjap.jsap.jp/link?JJAP/52/08JM03/
http://dx.doi.org/10.7567/JJAP.52.08JM03

-藤原康文, 李東建, 若松龍太, 松野孝則, 瀬野裕三, 大渕博宣, 本間徹生:&br;
&color(blue){''"X線吸収微細構造測定によるEu添加GaNにおけるEuイオンの周辺局所構造(VII)"''};&br;
SPring-8/SACLA利用研究成果集 ''1''(2) (2013) 69.&br;
http://user.spring8.or.jp/resrep/?p=482

//#211
-Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Volkmar Dierolf, and Yasufumi Fujiwara:&br;
&color(blue){''"Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites"''};&br;
Journal Applied Physics ''114'' (2013) 043501/1-5.&br;
http://dx.doi.org/10.1063/1.4816088

//#212
-K. Noda, Y. Terai, and Y. Fujiwara:&br;
&color(blue){''"Growth condition dependence of Ge-doped &beta;-FeSi&subsc{2}; epitaxial film by molecular beam epitaxy"''};&br;
Journal of Crystal Growth ''378'' (2013) 376-380.&br;
http://www.sciencedirect.com/science/article/pii/S0022024812007853

//#213
-B. Mitchell, D. Lee, D. Lee, A. Koizumi, J. Poplawsky, Y. Fujiwara, and V. Dierolf:&br;
&color(blue){''"Electron-beam-induced migration of hydrogen in Mg-doped GaN using Eu as a probe"''};&br;
Physical Review B ''88'' (2013) 121202(R)/1-5.&br;
http://link.aps.org/doi/10.1103/PhysRevB.88.121202
//http://dx.doi.org/10.1103/PhysRevB.88.121202

//#214
-Takahiro Tsuji, Yoshikazu Terai, Muhammad Hakim Bin Kamarudin, and Yasufumi Fujiwara:&br;
&color(blue){''"Formation of Eu&super{3+}; Luminescent Centers in Eu-Doped ZnO Grown by Sputtering-Assisted Metalorganic Chemical Vapor Deposition"''};&br;
Japanese Journal of Applied Physics ''52'' (2013) 111101.&br;
http://jjap.jsap.jp/link?JJAP/52/111101/

//#215
-J. D. Poplawsky, A. Nishikawa, Y. Fujiwara, and V. Dierolf:&br;
&color(blue){''"Defect roles in the excitation of Eu ions in Eu:GaN"''};&br;
Optics Express ''21'' (2013) 30633-30641.&br;
http://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-21-25-30633

//#216
-B. Mitchell, D. Lee, D. Lee, Y. Fujiwara, and V. Dierolf:&br;
&color(blue){''"Vibrationally induced center reconfiguration in co-doped GaN:Eu,Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels"''};&br;
Applied Physics Letters ''103'' (2013) 242105/1-4.&br;
http://scitation.aip.org/content/aip/journal/apl/103/24/10.1063/1.4846575

//#217
-Y. Terai, N. Suzuki, K. Noda, and Y. Fujiwara:&br;
&color(blue){''"Conduction properties of &beta;-FeSi&subsc{2}; epitaxial films with low carrier density"''};&br;
Physica Status Solidi C ''10'' (2013) 1696-1698.&br;
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201300342/abstract




**国際会議発表 [#w0516a50]

//#241
-Atsushi Koizumi, Ryuta Wakamatsu, Dong-gun Lee, Yasuhisa Saitoh, Yoshinori Kuboshima, Takayuki Mogi, Shintaro Higashi, Kaoru Kikukawa, Hironori Ofuchi, Tetsuo Honma, Yoshikazu Terai, and Yasufumi Fujiwara:&br;
&color(blue){''"Luminescence properties of Eu-doped GaN grown by organometallic vapor phase epitaxy using a new Eu precursor bis(n-propyltetramethylcyclopentadienyl)europium"''};&br;
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Tha-B02OB, Nagoya University, Nagoya, Japan, January 28-February 1 (2013).

//#240
-Ryosuke Hasegawa, Ryuta Wakamatsu, Atsushi Koizumi, Hironori Ofuchi, Masayoshi Ichimiya, Dong-gun Lee, Yoshikazu Terai, Tetsuo Honma, Masaaki Ashida, and Yasufumi Fujiwara:&br;
&color(blue){''"Luminescence properties of Eu-doped GaN grown by selective-area organometallic vapor phase epitaxy"''};&br;
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), P3055B, Nagoya University, Nagoya, Japan, January 28-February 1 (2013).

//#242
-Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, and Yasufumi Fujiwara:&br;
&color(blue){''"Site-selective characterization of Eu ion in gallium nitride"''};&br;
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), P3085B, Nagoya University, Nagoya, Japan, January 28-February 1 (2013).

//#243
-Y. Kashiwagi, A. Koizumi, Y. Takemura, S. Furuta, M. Yamamoto, M. Saitoh, M. Takahashi, T. Ohno, Y. Fujiwara, K. Murahashi, K. Ohtsuka, M. Nakamoto:&br;
&color(blue){''"Transparent Conductive Oxide Patterning on GaN Substrate by Screen Printing with Nanoparticle Pastes"''};&br;
International Conference on Electronics Packaging 2013 (ICEP 2013), ''TB2-1'', Osaka International Convention Center, Osaka, Japan, April 10-12 (2013).

//#244
-Dong-gun Lee, Masaaki Matsuda, Ryuta Wakamatsu, Atsushi Koizumi, and Yasufumi Fujiwara:&br;
&color(blue){''"Site-selective formation of Eu luminescent centers by oxygen codoping in Eu-doped GaN"''};&br;
The 40th International Symposium on Compound Semiconductors (ISCS 2013), ''TuA1-6'', Kobe Convention Center, Kobe, Japan, May 19-23 (2013).

//#245
-B. Mitchell, J. Poplawsky, Y. Fujiwara, and V. Dierolf:&br;
&color(blue){''"Modification of Eu incorporation stes by the dissociation of hydrogen defect complexes in Mg and Eu co-doped gallium nitride"''};&br;
European Conference on Lasers and Electro-Optics and the XIIIth International Quantum Electronics Conference (CLEO&reg;/Europe-IQEC), Munich, Germany, May 12-16 (2013).

//#74(246)
-Y. Fujiwara and A. Koizumi: ''[Invited talk]''&br;
&color(blue){''"Eu-doped GaN and its application to nitride-based red light-emitting diodes"''};&br;
Collaborative Conference on 3D & Materials Research (CC3DMR) 2013, Jeju, Korea, June 24-28 (2013).

//#74(247)
-Y. Terai, N. Suzuki, K. Noda, and Y. Fujiwara:&br;
&color(blue){''"Conduction properties of β-FeSi2 epitaxial films with low carrier density"''};&br;
Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), University of Tsukuba,Tsukuba, Japan, July 27-29 (2013).

//#75(248)
-Y. Fujiwara: ''[Keynote]''&br;
&color(blue){''"Rare-earth doped semiconductors and their application to novel light-emitting devices"''};&br;
8th Pacific Rim International Conference on Advanced Materials and Processing (PRICM8), Waikoloa, Hawaii, USA, August 4-9 (2013).

//#76(249)
-Y. Fujiwara and A. Koizumi: ''[Invited talk]''&br;
&color(blue){''"Development of properties and functionalities by precise control of rare earth doping"''};&br;
17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Warsaw, Poland, August 11-16 (2013).

//#76(250)
-R. Okada, W. Miao, Y. Terai, T. Tsuji, and Y Fujiwara:&br;
&color(blue){''"Sputtering-assisted metal-organic chemical vapor deposition of Yb-doped ZnO for photonic conversion in Si solar cells"''};&br;
The 16th International Conference on II-VI Compound and Related Materials (II-VI 2013), ''Mo-A5'', Nagahama, Japan, September 9-13 (2013).

//#251
-Hideyuki Taguchi, Amane Kitahara, Syugo Miyake, Akimitsu Nakaue, and Yasufumi Fujiwara:&br;
&color(blue){''"Analysis of Crystalline in GaN Epitaxial Layer after the Wafer Dicing Process"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''16p-PM1-8'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#252
-Atsushi Koizumi, Ryousuke Hasegawa, Ryuta Wakamatsu, Takehiro Tamaoka and Yasufumi Fujiwara:&br;
&color(blue){''"Controlled Formation of Semipolar {n-n01} GaN Facets by Eu Doping in Organometallic Vapor Phase Epitaxy"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''16p-PM1-28'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#253
-Yasufumi Fujiwara and Hitoshi Ohta: ''[Invited talk]''&br;
&color(blue){''"Cooperative behaviors between erbium ions codoped with oxygen in GaAs"''};&br;
2013 JSAP-MRS Joint Symposia Symposium H, ''18a-M4-1'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#254
-Dong-gun Lee, Masaaki Matsuda, Ryuta Wakamatsu, Atsushi Koizumi, and Yasufumi Fujiwara:&br;
&color(blue){''"Doping and luminescence characteristics of Eu,Ocodoped GaN grown by organometallic vapor phase epitaxy"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''18p-PM2-1'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#255
-Takanori Arai, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, and Yasufumi Fujiwara:&br;
&color(blue){''"Luminescence properties of Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''18p-PM2-2'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#256
-Atsushi Koizumi, Dong-gun Lee, Ryuta Wakamatsu, and Yasufumi Fujiwara: ''[Invited talk]''&br;
&color(blue){''"Recent Progress of Eu-Doping to GaN by Organometallic Vapor Phase Epitaxy"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19a-M5-1'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#257
-Wieteke D.A.M. deBoer, Chiron McGonigle, Yasufumi Fujiwara, Hong Zhang, Wybren J. Buma, Katerina Dohnalova, and Tom Gregorkiewicz: ''[Invited talk]''&br;
&color(blue){''"Optical characterization Eu-doped GaN layers grown by OMVPE"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19a-M5-2'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#258
-Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Volkmar Dierolf, and Yasufumi Fujiwara:&br;
&color(blue){''"Distribution of luminescent sites in Eu-doped GaN grown on GaN and sapphire substrates by organometallic vapor phase epitaxy"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19a-M5-3'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#259
-Hironori Ofuchi, Ryuta Wakamatsu, Dong-gun Lee, Atsushi Koizumi, Tetsuo Honma, and Yasufumi Fujiwara:&br;
&color(blue){''"Fluorescence XAFS analysis for Eu-doped GaN layers by organometallic vapor phase epitaxy using a new Eu precursor bis(npropyltetramethylcyclopentadienyl)europium"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19a-M5-4'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#260
-Brandon Mitchell, D. Lee, R. Wakamatsu, A. Koizumi, Yasufumi Fujiwara, and Volkmar Dierolf:&br;
&color(blue){''"Modification of Eu Incorporation Sites Induced by Electron Beam Irradiation in Eu and Mg co-doped GaN"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19a-M5-5'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#261
-Vyacheslav Kachkanov, Kevin O&apos;Donnell, Gerrit van der Laan, and Yasufumi Fujiwara: ''[Invited talk]''&br;
&color(blue){''"Induced magnetic moment of Eu&super{3+}; ions in GaN"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19p-M5-2'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#262
-Hitoshi Ohta, Fatma Elmasry, Weimin Zhang, Yohei Fukuoka, Susumu Okubo, and Yasufumi Fujiwara:&br;
&color(blue){''"Photoluminescent Material GaAs:Er,O Studied by ESR"''};&br;
2013 JSAP-MRS Joint Symposia Symposium I, ''19p-M5-4'', Doshisha University, Kyoto, Japan, September 16-20 (2013).

//#263
-H. Ohta, F. Elmasry, S. Okubo, T. Shimokawa, Y. Fujiwara, and T. Kita:&br;
&color(blue){''"ESR Studies of Magnetic Semiconductors"''};&br;
NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Kasugano-so, Nara, Japan, September 20-23 (2013).

//#264
-V. Kachkanov, K. O’Donnell, G. van der Laan, and Y. Fujiwara:&br;
&color(blue){''"Induced Magnetic Moment of Eu3+ Ions in GaN"''};&br;
NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Kasugano-so, Nara, Japan, September 20-23 (2013).

//#265
-Y. Fujiwara, R. Wakamatsu, D. Lee, V. Dierolf, and A. Koizumi:&br;
&color(blue){''"Local-structure Dependent Energy Transfer from the Host to Eu Ions in Eu-doped GaN"''};&br;
NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Kasugano-so, Nara, Japan, September 20-23 (2013).

//#266
-A. Koizumi, R. Wakamatsu, D. Lee, Y. Saitoh, Y. Kuboshima, Y. Mogi, S. Higashi, K. Kikukawa, H. Ofuchi, T. Honma, and Y. Fujiwara:&br;
&color(blue){''"Growth of Eu-doped GaN using an oxygen-free liquid Eu source bis(n-propyltetramethylcyclopentadienyl)europium by organometallic vapor phase epitaxy and its luminescence properties"''};&br;
NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Kasugano-so, Nara, Japan, September 20-23 (2013).

//#267
-B. Mitchell, Y. Fujiwara, and V. Dierolf:&br;
&color(blue){''"Discrepancies in the optical and magneto-optical spectra of Eu:GaN: what is the nature of the majority site?"''};&br;
NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Kasugano-so, Nara, Japan, September 20-23 (2013).

//#268
-R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara:&br;
&color(blue){''"Mutual energy transfer between Eu luminescent sites in GaN under resonant excitation"''};&br;
NSF Workshop on US-Japan Frontiers in Novel Photonic-Magnetic Devices, Kasugano-so, Nara, Japan, September 20-23 (2013).

//#269
-Y. Fujiwara, R. Wakamatsu, D. Lee, V. Dierolf, and A. Koizumi: ''[Invited talk]''&br;
&color(blue){''"Local-structure dependent energy transfer from the host to Eu ions in Eu-doped GaN"''};&br;
International Workshop on Luminescent Materials 2013 (LumiMat’13), ''I-8'', Kyoto University, Kyoto, Japan, November 14-15 (2013).

//#270
-Y. Fujiwara, D. Lee, R. Wakamatsu, and A. Koizumi: ''[Invited talk]''&br;
&color(blue){''"Recent progress in GaN-based red light-emitting diodes using Eu by organometallic vapor phase epitaxy"''};&br;
International Conference on Processing and Manufacturing of Advanced Materials (THERMEC’2013), ''L5'', Rio Hotel, Las Vegas, USA, December 2-6 (2013).



**国内会議発表 [#j91786c4]

//#302
-大渕博宣, 長谷川亮介, 李東建, 若松龍太, 松野孝則, 小泉淳, 本間徹生, 藤原康文&br;
&color(blue){''"蛍光XAFS法による選択成長Eu添加GaN中のEuイオン周辺局所構造解析"''};&br;
第60回応用物理学会春季学術講演会, ''27a-PA7-2'', 神奈川工科大学, 神奈川県厚木市, 3月27-30日 (2013).

//#303
-長谷川亮介, 若松龍太, 玉岡武泰, 小泉 淳, 藤原康文&br;
&color(blue){''"Eu添加による選択成長GaNのファセット制御"''};&br;
第60回応用物理学会春季学術講演会, ''27p-G21-9'', 神奈川工科大学, 神奈川県厚木市, 3月27-30日 (2013).

//#304
-若松龍太, 李東建, 小泉 淳, 藤原康文&br;
&color(blue){''"Eu添加GaNの共鳴励起下における発光特性評価と発光中心の定量評価"''};&br;
第60回応用物理学会春季学術講演会, ''28a-G5-6'', 神奈川工科大学, 神奈川県厚木市, 3月27-30日 (2013).

//#305
-若松龍太, 斎藤泰久, 李東建, 大渕博宣, 本間徹生, 小泉淳, 藤原康文&br;
&color(blue){''"Eu添加GaNにおける発光中心のEu原料依存性"''};&br;
第60回応用物理学会春季学術講演会, ''28a-G5-7'', 神奈川工科大学, 神奈川県厚木市, 3月27-30日 (2013).

//#306
-李東建, 松田将明, 若松龍太, 小泉淳, 藤原康文&br;
&color(blue){''"Eu添加GaNにおける酸素共添加によるEu発光中心の形成制御"''};&br;
第60回応用物理学会春季学術講演会, ''28a-G5-8'', 神奈川工科大学, 神奈川県厚木市, 3月27-30日 (2013).

//#307
-田口秀幸, 北原周, 三宅修吾, 中上明光, 藤原康文&br;
&color(blue){''"GaNエピタキシャル膜中の転位とメカニカルダイシングプロセスの相関性"''};&br;
第60回応用物理学会春季学術講演会, ''29a-G21-10'', 神奈川工科大学, 神奈川県厚木市, 3月27-30日 (2013).

//#308
-藤原康文, 小泉淳: ''【チュートリアル】''&br;
&color(blue){''"希土類元素を極める ～希土類添加窒化物半導体から何が見えてくるか～"''};&br;
第5回 窒化物半導体結晶成長講演会, 大阪大学吹田キャンパス, 大阪府吹田市, 6月21-22日(2013).

//#309
-松田将明, 李東建, 若松龍太, 小泉淳, 藤原康文:&br;
&color(blue){''"Eu添加GaNへ及ぼす酸素共添加の効果"''};&br;
第5回 窒化物半導体結晶成長講演会, ''ST12'', 大阪大学吹田キャンパス, 大阪府吹田市, 6月21-22日(2013).

//#310
-稲葉智宏, 李東建, 若松龍太, 小泉淳, 藤原康文:&br;
&color(blue){''"Eu添加GaN赤色LEDにおけるEu発光強度の電極面積依存性"''};&br;
第5回 窒化物半導体結晶成長講演会, ''ST13'', 大阪大学吹田キャンパス, 大阪府吹田市, 6月21-22日(2013).

//#311
-桑田宗一郎, 小泉淳, 藤原康文:&br;
&color(blue){''"有機金属気相エピタキシャル法により作製したEu,Si共添加GaNのDLTS評価"''};&br;
第75回応用物理学会秋季学術講演会, 16a-P2-10, 同志社大学京田辺キャンパス, 京都府京田辺市, 9月16-20日(2013).

//#312
-松田将明, 李東建, 若松龍太, 小泉淳, 藤原康文:&br;
&color(blue){''"Eu,O共添加GaNにおけるEu発光特性への成長圧力の効果"''};&br;
第75回応用物理学会秋季学術講演会, 18a-D7-2, 同志社大学京田辺キャンパス, 京都府京田辺市, 9月16-20日(2013).

//#313
-稲葉智宏, 李東建, 若松龍太, 小泉淳, 藤原康文:&br;
&color(blue){''"Eu添加GaN赤色LEDにおけるEu発光強度の電極面積依存性''};&br;
第75回応用物理学会秋季学術講演会, 18a-D7-3, 同志社大学京田辺キャンパス, 京都府京田辺市, 9月16-20日(2013).

//#314
-田口秀幸, 北原周, 三宅修吾, 中上明光, 鈴木敦志, 上山智, 藤原康文:&br;
&color(blue){''"GaNエピタキシャル膜中の転位とウエハダイシングプロセスの相関性''};&br;
第75回応用物理学会秋季学術講演会, 19p-B5-13, 同志社大学京田辺キャンパス, 京都府京田辺市, 9月16-20日(2013).



**研究会 [#k3f0945e]

//#333
-藤原康文: ''【招待講演】''&br;
&color(blue){''"希土類元素がもたらす桃源郷！～希土類添加半導体と発光ダイオードへの応用～"''};&br;
大阪大学光科学センター・りそな中小企業振興財団　技術懇親会「先進光源と産業応用」, 大阪大学銀杏会館, 吹田市, 2月8日（2013）.

//#334
-藤原康文: ''【招待講演】''&br;
&color(blue){''"希土類元素を極める　～「希土類添加半導体」を題材として～"''};&br;
平成24年度大阪大学「物質・材料科学研究推進機構」講演会「物質科学における分野融合」, 大阪大学理学部, 吹田市, 3月4日（2013）.

//#335
-藤原康文: ''【招待講演】''&br;
&color(blue){''"窒化物半導体赤色LEDの現状と将来展望～希土類元素がもたらす桃源郷！"''};&br;
SEMI FORUM JAPAN 2013, グランキューブ大阪, 大阪市北区, 5月22日（2013）.

//#336
-T. Arai, R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara:&br;
&color(blue){''"Enhancement of red luminescence intensity in Eu-doped GaN/AlGaN multiple quantum well structures grown by organometallic vapor phase epitaxy"''};(有機金属気相エピタキシャル法で成長したEu添加GaN/AlGaN多重量子井戸構造における赤色発光の増大)&br;
32nd Electronic Materials Symposium, ''We2-22'', ラフォーレ琵琶湖, 滋賀県守山市, 7月10-12日 (2013).

//#337
-R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara:&br;
&color(blue){''"Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites"''};(共鳴励起下のEu添加 GaN の発光特性評価と発光中心の定量評価)&br;
32nd Electronic Materials Symposium, ''We2-24'', ラフォーレ琵琶湖, 滋賀県守山市, 7月10-12日 (2013).

//#338
-藤原康文: ''【招待講演】''&br;
&color(blue){''"Eu添加GaN赤色発光ダイオードの現状と将来展望"''};&br;
CRESTパワー・先端素子半導体に関するシンポジウム, 北海道大学情報科学研究科, 札幌市, 7月19日 (2013).

//#339
-荒居孝紀, 若松龍太, 李 東建, 小泉 淳, 藤原康文:&br;
&color(blue){''"赤色発光Eu添加GaN/AlGaN多重量子井戸構造のOMVPE成長と発光特性"''};&br;
電子情報通信学会 電子デバイス研究会, ''ED2013-77'', 大阪大学, 大阪府吹田市, 11月28-29日 (2013).

//#340
-桒田宗一郎, 小泉 淳, 藤原康文:&br;
&color(blue){''"有機金属気相エピタキシャル法により作製したEu,Si共添加GaNにおける欠陥準位の深準位過渡応答測定"''};&br;
電子情報通信学会 電子デバイス研究会, ''ED2013-78'', 大阪大学, 大阪府吹田市, 11月28-29日 (2013).












**解説等 [#t1622e28]

//#17
-小泉淳, 藤原康文:&br;
&color(blue){''"希土類添加半導体の精密制御成長と発光機能"''};&br;
スマートプロセス学会誌 ''2'' (2013) pp. 213-218.

//#18
-藤原康文:&br;
&color(blue){''"Eu添加GaN赤色発光ダイオード～電気を流してEuを光らせる～"''};&br;
オプトロニクス　第382号 (2013) pp. 114-118.



**顕彰 [#u999f6f5]

-藤原康文
--APEX/JJAP Editorial Contribution Award
--The Japan Society of Applied Physics
--2013年4月10日

-藤原康文
--平成25年度大阪大学総長顕彰（研究部門）
--国立大学法人大阪大学
--2013年8月22日