Y. Terai, K. Yoneda, K. Noda, N. Miura, and Y. Fujiwara: "Effect of residual impurities on transport properties of β-FeSi2 epitaxial films grown by molecular beam epitaxy"
Journal of Applied Physics 112 (2012) pp. 013702/1-5. http://jap.aip.org/resource/1/japiau/v112/i1/p013702_s1
T. Tsuji, Y. Terai, M. H. Kamarudin, K. Yoshida, and Y. Fujiwara: "Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
Journal of Luminescence 132 (2012) pp. 3125–3128. http://www.sciencedirect.com/science/article/pii/S0022231311006958
T. Tsuji, Y. Terai, M. H. Kamarudin, M. Kawabata, and Y. Fujiwara: "Photoluminescence properties of Sm-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
Journal of Non-Crystalline Solids 358 (2012) pp. 2443-2445. http://www.sciencedirect.com/science/article/pii/S0022309311008222
H. Sasaki, T. Hisaka, K. Kadoiwa, Y. Terai, and Y. Fujiwara: "Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy"
IEICE Electronics Express 9(20) (2012) pp. 1592-1597. https://www.jstage.jst.go.jp/article/elex/9/20/9_1592/_article
K. Mori, K. Watanabe, Y. Terai, Y. Fujiwara, and H. Yamashita: "Hybrid mesoporous silica materials functionalized by Pt(II) complexes: Correlation between spatial distribution of active center, photoluminescence emission, and photocatalytic activity"
Chemistry - A European Journal 18 (2012) pp. 11371-11378. http://onlinelibrary.wiley.com/doi/10.1002/chem.201200959/abstract
Y. Fujiwara, A. Nishikawa, and Y. Terai: [Invited talk] "Recent Progress in Red LEDs with Eu-doped GaN"
Optical Society of America Topical Meeting on Advances in Optical Materials (AIOM), ITh5B.4, San Diego, USA, February 1-3 (2012).
Y. Fujiwara: [Invited talk] "Current status of environment-friendly red light-emitting diodes with Eu-doped GaN"
5th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA 2012), Nara, Japan, June 5-7 (2012).
Dong-gun Lee, Ryuta Wakamatsu, Takanori Matsuno, Ryosuke Hasegawa, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara "Control of Eu luminescence centers by codoping of Mg and Si in Eu-doped GaN"
International Workshop on Nitride Semiconductors 2012, TuP-PR-34, Sapporo convention center, Sapporo, Japan, October 14-19 (2012).
Ryuta Wakamatsu, Atsushi Koizumi, Dong-gun Lee, Yoshikazu Terai, Volkmar Dierolf, and Yasufumi Fujiwara "Variation of luminescence properties in Eu-doped gallium nitride grown on GaN and sapphire substrates by organometallic vapor phase epitaxy"
International Workshop on Nitride Semiconductors 2012, TuP-PR-40, Sapporo convention center, Sapporo, Japan, October 14-19 (2012).
Takanori Matsuno, Dong-gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara "Luminescence properties of Eu-doped GaN grown by flow-rate modulation epitaxy"
International Workshop on Nitride Semiconductors 2012, ThP-GR-44, Sapporo convention center, Sapporo, Japan, October 14-19 (2012).
Hideyuki Taguchi, Amane Kitahara, Syugo Miyake, Akimitu Nakaue and Yasufumi Fujiwara:
"Analysis of Dislocation in GaN Generated by Mechanical Wafer Dicing Process"
8th Handai Nanoscience and Nanotechnology International Symposium, P1-4, Osaka University, Osaka, Japan, December 10-11 (2012).
Ryosuke Hasegawa, Ryuta Wakawatsu, Atsushi Koizumi, Hironori Ofuchi, Masayoshi Ichimiya, Dong-gun Lee, Yoshikazu Terai, Tetsuo Honma, Masaaki Ashida and Yasufumi Fujiwara:
"Luminescence properties of Eu-doped GaN grown by selective-area organometallic vapor phase epitaxy"
8th Handai Nanoscience and Nanotechnology International Symposium, P1-5, Osaka University, Osaka, Japan, December 10-11 (2012).
Y. Kashiwagi, A. Koizumi, Y. Takemura, M. Yamamoto, M. Saitoh, M. Takahashi, T. Ohno, Y. Fujiwara, K. Murahashi, K. Ohtsuka, and M. Nakamoto:
"Direct Transparent Electrode Formation on GaN Substrate by Screen Printing with Indium Tin Oxide Nanoparticle Pastes"
8th Handai Nanoscience and Nanotechnology International Symposium, P1-6, Osaka University, Osaka, Japan, December 10-11 (2012).
Dong-gun Lee, Ryuta Wakamatsu, Atsushi Koizumi, Yoshikazu Terai, and Yasufumi Fujiwara:
"Direct evidence for creation of Eu-Mg-H complex in Eu,Mg-codoped GaN"
8th Handai Nanoscience and Nanotechnology International Symposium, P1-7, Osaka University, Osaka, Japan, December 10-11 (2012).
Atsushi Koizumi, Ryuta Wakamatsu, Dong-gun Lee, Yasuhisa Saitoh, Yoshinori Kuboshima, Takayuki Mogi, Shintaro Higashi, Kaoru Kikukawa, Hironori Ofuchi, Tetsuo Honma, Yoshikazu Terai, and Yasufumi Fujiwara:
"Comparative Study on Luminescence Properties of Eu-doped GaN Grown Using Eu(DPM)3 and EuCppm2"
8th Handai Nanoscience and Nanotechnology International Symposium, P1-8, Osaka University, Osaka, Japan, December 10-11 (2012).
F. Elmasry, W. Zhang, Y. Fukuoka, S. Okubo, H. Ohta, and Y. Fujiwara:
"ESR measurements of GaAs;Er,O"
8th Handai Nanoscience and Nanotechnology International Symposium, P1-9, Osaka University, Osaka, Japan, December 10-11 (2012).
K. Noda, Y. Terai, and Y. Fujiwara:
"Growth condition dependence of Ge doping into β-FeSi2 epitaxial film by MBE method"
ベータ鉄シリサイドエピタキシャル膜におけるゲルマニウムドーピングの成長条件依存性
31st Electronic Materials Symposium, We2-6, pp. 39-40, ラフォーレ修善寺、伊豆市、7月11日(2012).
D. Lee, R. Wakamatsu, T. Matsuno, R. Hasegawa, A. Koizumi, Y. Terai, and Y. Fujiwara:
"Eu luminescence properties in Eu,Mg,Si-codoped GaN"
Eu,Mg,Si 共添加窒化ガリウムにおける Eu の発光特性
31st Electronic Materials Symposium, Th1-17, pp. 113-114, ラフォーレ修善寺、伊豆市、7月12日(2012).
T. Matsuno, D. Lee, R. Wakamatsu, A. Koizumi, Y. Terai, and Y. Fujiwara:
"Growth and optical properties of Eu-doped GaN grown with flow-rate modulation epitaxy"
流量変調エピタキシーによる Eu 添加 GaN の作成と発光特性評価
31st Electronic Materials Symposium, Th1-18, pp. 115-116, ラフォーレ修善寺、伊豆市、7月12日(2012).
R. Wakamatsu, A. Koizumi, D. Lee, Y. Terai, and Y. Fujiwara:
"Anomalous luminescence peak observed in Eu-doped gallium nitride"
Eu 添加 GaN において観測される特異な発光ピーク
31st Electronic Materials Symposium, Th1-19, pp. 117-120, ラフォーレ修善寺、伊豆市、7月12日(2012).
R. Hasegawa, R. Wakamatsu, A. Koizumi, H. Ofuchi, D. Lee, Y. Terai, T. Honma, and Y. Fujiwara:
Luminescence properties of Eu-doped GaN grown by selective-area organometallic vapor phase epitaxy
有機金属気相エピタキシャル法による選択成長を用いた Eu 添加 GaNの成長とその発光特性評価
31st Electronic Materials Symposium, Th1-20, pp. 121-122, ラフォーレ修善寺、伊豆市、7月12日(2012).
W. Miao, Y. Terai, T. Tsuji, W. Cao, and Y. Fujiwara:
"Photoluminescence properties of Yb-doped ZnO grown by sputtering-assisted MOCVD"
スパッタリング併用 MOCVD 法により作製した Yb 添加 ZnO の光学特性評価
31st Electronic Materials Symposium, Th1-21, pp. 123-124, ラフォーレ修善寺、伊豆市、7月12日(2012).
T. Tsuji, Y. Terai, W. Miao, H. Hatagishi and Y. Fujiwara:
"PL properties of Eu3+ in Eu,Au-codoped ZnO grown by SA-MOCVD"
SA-MOCVD 法で成長した Eu,Au 共添加 ZnO における Eu3+発光特性の評価
31st Electronic Materials Symposium, Th1-22, pp. 125-126, ラフォーレ修善寺、伊豆市、7月12日(2012).
Top/研究成果/2012年
