Y. Anzai, M. Yamamoto, S. Genchi, K. Watanabe, T. Taniguchi, S. Ichikawa, Y. Fujiwara, and H. Tanaka: "Broad range thickness identification of hexagonal boron nitride by colors,"
Applied Physics Express 12 (2019) pp. 055007/1-5.
J. Tatebayashi, T. Yamada, T. Inaba, S. Ichikawa, and Y. Fujiwara: "Enhanced luminescence efficiency of GaN:Eu-based lightemitting diodes by localized surface plasmons utilizing gold nanoparticles,"
Japanese Journal of Applied Physics 58 (2019) pp. SCCC09/1-6.
A. Lesage, D. Timmerman, T. Inaba, T. Gregorkiewicz, and Y. Fujiwara: "Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD,"
Scientific Reports 9 (2019) pp. 4231/1-6.
B. Mitchell, R. Wei, J. Takatsu, D. Timmerman, T. Gregorkiewicz, W. Zhu, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, and V. Dierolf: "Color-tunablility in GaN LEDs based on atomic emission manipulation under current injection,"
ACS Photonics 6 (2019) pp. 1153-1161.
R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi,
S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions,"
Physical Review B 100 (2019) pp. 081201(R)/1-5.
J. Tatebayashi, T. Yamada, T. Inaba, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles,"
Applied Physics Express (2019).
S. Ichikawa, J. Takatsu, R. Fuji, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Excitation and relaxation processes of narrow-band blue emission in Tm-doped AlGaN revealed by time-resolved photoluminescence spectroscopy"
11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 12th International Conference on Plasma-Nano Technology & Science (ISPlasma 2019/IC-PLANTS2019), 19P3-35, Nagoya Insitute of Technology, Nagoya, Japan, March 17-21 (2019).
Y. Fujiwara, S. Ichikawa, J. Tatebayashi: [Invited Talk] "New development in red light-emitting diodes (LEDs) using Eu-doped GaN for monolithic micro-LED displays"
2019 Internional Conference on display technology (ICDT2019), 16.3, Kunshan, Suzhou, China, March 26-29 (2019).
Y. Fujiwara, T. Inaba, K. Shiomi, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics; manipulation of Eu luminescence in Eu-doped GaN by control of photon fields"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-LDC-JS-2-01, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
Y. Sasaki, T. Inaba, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Manipulation of Eu luminescence in GaN:Eu-based microdisks"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-4-02, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa, and R. Katayama: [Invited Talk] "First demonstration of GaN monolithic doubly-resonant microcavity SHG device on Si pedestal structure"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-7-01, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
Y. Morioka, S. Yamaguchi, K. Shojiki, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, M. Uemukai, and R. Katayama: "Development Focusing grating coupler for AlN deep UV waveguide SHG device"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-8-02, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
M. Ogawa, T. Kishina, R. Higashi, M. Fujita, S. Noda, J. Tatebayashi, and Y. Fujiwara: "Numerical analysis of luminescence enhancement in L3-type photonic crystal nanocavities with Er,O-codoped GaAs"
International Conference on Nano-photonics and Nano-optoelectronics (ICNN2019), ICNN-4-05, Pacifico Yokohama, Yokohama, Japan, April 24-26 (2019).
S. Yamada, Y. Goto, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and K. Hamaya: "High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN (0001) surface"
Compound Semiconductor Week 2019 (CSW2019), TuP-A-5, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, S. Ichikawa, J. Tatebayashi, V. Dierolf, and Y. Fujiwara: "Picosecond time-resolved excitation dynamics and emission manipulation of Eu3+ ions doped in GaN"
Compound Semiconductor Week 2019 (CSW2019), TuP-G-11, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications"
Compound Semiconductor Week 2019 (CSW2019), WeC2-5, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
Y. Fujiwara, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics"
Collaborative Conference on Materials Research 2019 (CCMR2019), KINTEX, Gyeonggi Goyang, Seoul, Korea, June 2-7 (2019).
Y. Fujiwara, K. Shiomi, Y. Sasaki, T. Inaba, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), A10.01, Bellevue, USA, July 7-12 (2019).
S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Control of growth kinetics towards enhanced red emissions from strongly excited Eu-doped GaN"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), G09.03, Bellevue, USA, July 7-12 (2019).
S. Yamaguchi., A. Yamauchi., T. Onodera., M. Uemukai., Y. Hayashi., H. Miyake., T. Hikosaka., S. Nunoue., K. Shiomi., Y. Fujiwara, and R. Katayama: "Demonstration of transverse quasi-phase-matched AlN waveguide SHG device fabricated by surface-activated bonding and silicon removal"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), D01.06, Bellevue, USA, July 7-12 (2019).
M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa, and R. Katayama: "Demonstration of GaN monolithic doubly-resonant microcavity SHG device"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), M01.02, Bellevue, USA, July 7-12 (2019).
R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Incorporation Site Dependent Excitation Dynamics of Eu3+ ions in Eu-doped GaN"
30th International Conference on Defects in Semiconductors (ICDS-30), FrAII-4, Seattle, USA, July 21-26 (2019).
B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, Y. Fujiwara, and V. Dierolf: "Color-tunablility in Eu doped GaN LEDs based on atomic emission manipulation under current injection"
30th International Conference on Defects in Semiconductors (ICDS-30), PII-7, Seattle, USA, July 21-26 (2019).
J. Tatebayashi, R. Higashi, M. Ogawa, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Observation of strongly enhanced Er-related luminescence coupled with cavity modes in Er,O-codoped GaAs microdisks"
30th International Conference on Defects in Semiconductors (ICDS-30), PII-18, Seattle, USA, July 21-26 (2019).
J. Tatebayashi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: [Invited Talk] "Enhancement of Eu luminescence in GaN:Eu via introduction of nanostructures and nanocavities"
Asia Pacific Society for Materials Research 2019 (APSMR2019) Annual Meeting, Hokkaido, Japan, July 26-29 (2019).
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] "Manipulation of Eu emission from GaN using control of photon fields"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
J. Tatebayashi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Localized surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes with silver nanoparticles"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
D. Timmerman, E. Matsubara, L. Gomez, T. Gregorkiewicz, M. Ashida, and Y. Fujiwara: "Direct determination of multiple exciton generation rate"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
M.Uemukai, S. Yamaguchi, A. Yamauchi, D. Tazuke, A. Higuchi, R. Tanabe, T. Tanikawa, T. Hikosaka, S. Nunoue, Y. Hayashi, H. Miyake, Y. Fujiwara, and R. Katayama: "InGaN laser pumped nitride semiconductor transverse quasi-phase-matched waveguide second harmonic generation devices"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
Y. Morioka, M. Uemukai, T. Tanikawa, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara, and R. Katayama: "Input focusing grating coupler for AlN deep UV waveguide SHG device"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] "Manipulation of Eu emission from GaN by control of photon fields toward micro-LED display"
4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019), Hanoi, Vietnam, October 13-16 (2019).
D. Timmerman, E. Matsubara, L. Gomez, T. Gregorkiewicz, M. Ashida, and Y. Fujiwara: [Invited Talk] "Excitation dynamics and efficiency of luminescence of Eu in GaN"
4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019), Hanoi, Vietnam, October 13-16 (2019).
D. Timmerman, M. Ashida, S. Ishikawa, J. Tatebayashi, and Y. Fujiwara: "Excitation dynamics and efficiency of Eu luminescence in GaN"
第80回応用物理学会秋季学術講演会、20p-E302-16、北海道大学札幌キャンパス、札幌市、9月18-21日 (2019).
藤原康文、塩見圭史、稲葉智宏、朱婉新、市川修平、舘林潤:【招待講演】 "半導体イントラセンター・フォトニクスの開拓 −波長超安定・狭帯域Eu添加GaN赤色発光ダイオードの新展開−"
The 29th Meeting on Glasses for Photonics、1、京都大学吉田南キャンパス、京都市左京区、1月28日 (2019).
S. Yamada, R. Honda, Y. Goto, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, and K. Hamaya: "Magnetic and electrical properties of epitaxial Co2FeSi/GaN(0001) heterostructures for spintronic applications"
38th Electronic Materials Symposium, We1-6, The Kashihara、奈良県橿原市、10月9-11日 (2019).
M. Mishina, J. Tatebayashi, T. Nakajima, S. Ichikawa, and Y. Fujiwara: "Formation and optical characteristics of Eu-doped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapour deposition"
38th Electronic Materials Symposium, We2-16, The Kashihara、奈良県橿原市、10月9-11日 (2019).
J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Observation of the down-conversion behavior in ZnO:Tm,Yb/ZnO core-shell nanowires"
38th Electronic Materials Symposium, We2-17, The Kashihara、奈良県橿原市、10月9-11日 (2019).
R. Higashi, M. Ogawa, J. Tatebayashi, S. Ichikawa, M. Kondow, and Y. Fujiwara: "Enhancement of Er luminescence in microdisk resonators with Er,O-codoped GaAs"
38th Electronic Materials Symposium, We2-18, The Kashihara、奈良県橿原市、10月9-11日 (2019).
T. Morikawa, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Surface-pit elimination of GaN-related materials using Eu-doping technique"
38th Electronic Materials Symposium, Th1-14, The Kashihara、奈良県橿原市、10月9-11日 (2019).
S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Surface-morphology control using appropriate impurity-doping for vicinal (0001) GaN"
38th Electronic Materials Symposium, Th1-17, The Kashihara、奈良県橿原市、10月9-11日 (2019).
T. Nagata, S. Umeda, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama: "Fabrication of GaN doubly-resonant waveguide microcavity SHG device"
38th Electronic Materials Symposium, Fr1-10, The Kashihara、奈良県橿原市、10月9-11日 (2019).
S. Umeda, T. Nagata, T. Hikosaka, S. Nuoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama: "Design of GaN doubly-resonant waveguide microcavity SHG device"
38th Electronic Materials Symposium, Fr1-11, The Kashihara、奈良県橿原市、10月9-11日 (2019).
Y. Morioka, M. Uemukai, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara, T. Tanikawa, and R. Katayama: "Input grating coupler for AlN channel waveguide wavelength conversion device"
38th Electronic Materials Symposium, Fr1-13, The Kashihara、奈良県橿原市、10月9-11日 (2019).
A. Yamauchi, T. Komatsu, K. Ikeda, K. Uesugi, K. Shojiki, H. Miyake, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama: "Design of deep ultraviolet second harmonic generation device with double-layer polarity-inverted AlN waveguide"
38th Electronic Materials Symposium, Fr1-16, The Kashihara、奈良県橿原市、10月9-11日 (2019).
N. Yoshioka, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Remarkably wavelength-stable near-infrared emission of Tm-doped GaN light-emitting diodes"
38th Electronic Materials Symposium, Fr1-20, The Kashihara、奈良県橿原市、10月9-11日 (2019).
Top/研究成果/tokusui
