Y. Terai, K. Hidaka, T. Hiramatsu and Y. Fujiwara:
"Organometallic vapor phase epitaxy of Er,O-codoped GaAs using trisdipivaloylmethanatoerbium"
Journal of Physics: Conference Series 106 (2008) p. 012007.
Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi and Y. Fujiwara:
"Ultrafast carrier-capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy"
Applied Physics Letters 93(23) (2008) 231117 1-3.
Y. Fujiwara, S. Takemoto, T. Tokuno, K. Hidaka, H. Ichida, M. Suzuki, Y. Terai, Y. Kanematsu and M. Tonouchi:
"Mechanism of excitation and relaxation in Er,O-codoped GaAs for 1.5mm light-emitting devices with extremely stable wavelength"
Physica Status Solidi (a) 205(1) (2008) pp. 64-67.
K. Yamaoka, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane"
Thin Solid Films 517(2) (2008) pp. 479-482.
K. Fujii, K. Hidaka, D. Yamamoto, Y. Terai and Y. Fujiwara:
"GaAs emission from GaInP/Er,O-Co doped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy"
Physica Status Solidi (c) 5(9) (2008) pp. 2716-2718.
K. Shimada, S. Takemoto, K. Hidaka, Y. Terai, M. Tonouchi and Y. Fujiwara:
"Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy"
Physica Status Solidi (c) 5(9) (2008) pp. 2861-2863.
A. Fujita, T. Tokuno, K. Hidaka, K. Fujii, K. Tachibana, H. Ichida, Y. Terai, Y. Kanematsu and Y. Fujiwara:
"Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy"
Physica Status Solidi (c) 5(9) (2008) pp. 2864-2866.
K. Yamaoka, Y. Terai, T. Yamaguchi and Y. Fujiwara:
"Growth of transition-metal-doped ZnO films by plasma-enhanced CVD combined with RF sputtering"
Physica Status Solidi (c) 5(9) (2008) pp. 3125-3127.
S. Hashimoto, Y. Terai and Y. Fujiwara:
"Improved initial epitaxial growth of b-FeSi2 on Si(111) substrate by Al-doping"
Physica Status Solidi (c) 5(9) (2008) pp. 3159-3161.
K. Ono, M. Takemi and Y. Fujiwara:
"MOVPE growth parameter dependence of phase separation in miscility gap of InGaAsP"
Japanease Journal of Applied Physics 47(2) (2008) pp. 896-898.
Y. Ota, K. Fujii, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, Y. Terai, and Y. Fujiwara:
"Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy"
IOP Conference Series: Materials Science and Engineering 1 (2009) 012022/1-4.
S. Kimura, S. Emura, Y. Yamauchi, Y. K. Zhou, S. Hasegawa and H. Asahi:
"Low temperature molecular-beam epitaxy growth of cubic GaCrN"
J. Cryst. Growth 310 (2008) pp. 40-46.
Y.K. Zhou, S.W. Choi, S. Emura, S. Hasegawa and H. Asahi:
"Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures"
Appl. Phys. Lett. 92(6) (2008)pp. 6062505-1 - 6062505-3.
S. Kimura, S. Emura, K. Tokuda, Y. Hiromura, S. Hayakawa, Y.K. Zhou, S. Hasegawa and H. Asahi:
"Growth and characterization of InCrN and (In,Ga,Cr)N"
Phys. Stat. Sol. (c) 5 (6) (2008) pp. 1532-1535
G. S. Song, M. Kobayashi, J. I. Hwang, T. Kataoka, M. Takizawa, A. Fujimori, T. Ohkouchi, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, F.-H. Chang, L. Lee, H.-J. Lin, D. J. Huang, C. T. Chen, S. Kimura, M. Funakoshi, S. Hasegawa, and H. Asahi:
"Electronic structure of Ga1-xCrxN and Si-doping effects studied by photoemission and X-ray absorption spectroscopy"
Phys. Rev. B 78 (2008), pp. 033304-1/4.
Y. K. Zhou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi:
"Formation of aligned CrN nanoclusters in Cr-delta-doped GaN"
J. Phys.: Condens. Matter. 21 (2009), pp. 064216-1/4.
S. Kimura, K. Tokuda, Y. K. Zhou, S. Emura, S. Hasegawa and H. Asahi:
"Structural properties of AlCrN, GaCrN and InCrN"
J. Crystal Growth (in press).
Kazuyoshi Fujio, Minoru Fujii, Kazuaki Sumida, Shinji Hayashi, Masashi Fujisawa, and Hitoshi Ohta:
"Electron spin resonance studies of P and B codoped Si nanocrystals"
App. Phys. Lett. 93 (2008), pp. 021920-1/3.
H. Ohta, W. Zhang, S. Okubo, M. Tomoo, M. Fujisawa, H. Yoshida, Y. Okamoto, Z. Hiroi:
J. Phys.: Conf. Series 145 (2009), pp. 012010-1-4.
Y. K. Zhou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi:
"Formation of aligned CrN nano-clusters in Cr-delta-doped GaN"
International Conference on Quantum Simulators and Design 2008, Tokyo, May 31-June 3, 2008.
Y. Fujiwara:
"Quantum properties revealed by precise control of atomic configuration in rare-earth doped semiconductors"
MRS International Materials Research Conference, D8.4, Chongqing, China, June 9-12 (2008).
H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, S. Emura, S. Hasegawa and H. Asahi:
"Crystal growth and characterization of GaCrN nanorods on Si substrate"
The 2nd International Symposium on Growth of III-Nitrides, Izu, Japan, July 6-9, 2008
Y. Fujiwara:
"Injection-type 1.5um light-emitting diodes with Er,O-codoped GaAs exhibiting extremely temperature-stable emission wavelength".
3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications, Edmonton, Canada, July 20-25 (2008).
S. Emura, S. Kimura, K. Tokuda, Yi-Kai Zhou, S. Hasegawa and H Asahi:
"Orbital ordering on dilute Cr3+ ions doped in GaN"
29th International Conference on Physics of Semiconductors, Brazil, July 27-August 1, 2008
M. Takahashi, Y. Hiromura, S. Emura, T. Nakamura Y.K. Zhou, S. Hasegawa and H Asahi:
"Third magnetic phase of GaGdN detected by SX-MCD"
29th International Conference on Physics of Semiconductors, Brazil, July 27-August 1, 2008.
S. Kimura, K. Tokuda, Y. K. Zhou, S. Emura, S. Hasegawa and H. Asahi:
"Structural properties of AlCrN, GaCrN and InCrN"
15th International Conference on Molecular Beam Epitaxy, Vancouver, Canada, August 3-8, 2008.
Y. K. Zhou, M. Takahashi, S. Emura, S. Hasegawa, H. Asahi:
"Annealing effect in GaDyN on optical and magnetic properties"
5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors, Foz do Iguacu, PR, Brazil, Augst 3-6, 2008.
M. Takahashi, Y.K. Zhou, S. Emura, T. Nakamura, S. Hasegawa, and H Asahi:
"Magnetic properties of GaGdN studied by SQUID and SX-MCD"
5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors, Foz do Iguacu, PR, Brazil, Augst 3-6, 2008.
K. Yamaoka, Y. Terai, T. Yamaguchi, K. Yoshida and Y. Fujiwara:
"Structural and Luminescent Properties of Er-Doped ZnO Films Grown by MOCVD"
5th International Workshop on ZnO and Related Materials, AP40, Ann Arbor Marriott Ypsilanti at Eagle Crest, Michigan, USA, September 22-24 (2008).
M. Fujisawa, A. Asakura, E. Fatma, S. Okubo, H. Ohta and Y. Fujiwara:
"Electron Spin Resonance Study of Photoluminescent Semiconductor GaAs: Er,O -Er
Concentration Effect-"
4th Handai Nanoscience and Nanotechnology International Symposium: Nano-advanced Materials and Devices ?from Nano-fabrication to Nano-application-, P1-27, Icho-kaikan, Osaka University, Suita, Osaka, September 29-October 1 (2008).
H. Asahi, S. Hasegawa, S. Emura and Y.K. Zhou :
"Growth and characterization of transition-metal and rare-earth doped III-nitride based magnetic semiconductors for nano-spintronics"
4th Handai Nanoscinece and Nanotechnology International Symposium, Osaka University, Osaka, September 29-October 1, 2008.
Y. Fujiwara, Y. Terai and A. Nishikawa:
"Development of new-type 1.5 um light-emitting devices based on Er, O-codoped GaAs"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), OR212, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
H. Kasai, A. Nishikawa, Y. Terai and Y. Fujiwara:
"Luminescence Properties of Eu-implanted GaN-based Semiconductors"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), PO28, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
K. Yamaoka, Y. Terai, T. Yamaguchi, H. N. Ngo, T. Gregorkiewicz, and Y. Fujiwara:
"Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 ?m photoluminescence"
International Conference on Advanced Structural and Functional Materials Design 2008 (ICASFMD2008), PO49, Hotel Hankyu Expo Park, Osaka, November 10-12, 2008.
H. Ohta, M. Fujisawa, M. Yoshida, and Y. Fujiwara:
"Electron spin resonance study on Er,O-codoped GaAs"
2008 Materials Research Society Fall Meeting, Boston, USA, D1.1, December 1-5 (2008).
Y. Fujiwara, K. Fujii, A. Fujita, Y. Ota, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji and Y. Terai:
"Luminescence properties in Er,O-codoped GaAs light-emitting devices with double excitation mechanism"
2008 Materials Research Society Fall Meeting, Boston, USA, D1.2, December 1-5 (2008).
M. Fujisawa, H. Ohta, and Y. Fujiwara:
"Electron spin resonance study on Er,O-codoped GaAs"
2008 Materials Research Society Fall Meeting, Boston, USA, D4.6, December 1-5 (2008).
S. Emura, M. Takahashi, H. Tambo, T. Nakamura, Y.K Zhou, S. Hasegawa and H. Asahi :
"Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN"
Materials Research Society Fall Meeting, Boston, MA, USA, December 1-5, 2008.
K. Shimada, Y. Terai, Y. Ota, I. Kawayama, M. Tonouchi, and Y. Fujiwara:
"Teraherz radiation from Er,O-codoped GaAs surface excited by optical pulse"
IUMRS International Conference in Asia 2008 (IUMRS-ICA2008), Nagoya Congress Center, Nagoya, December 9-13 (2008).
K. Yamaoka, Y. Terai, T. Yamaguchi, and Y. Fujiwara
"Annealing effects on luminescent properties of Er-doped ZnO films grown by metalorganic chamical vapor deposition"
IUMRS International Conference in Asia 2008 (IUMRS-ICA2008), Nagoya Congress Center, Nagoya, December 9-13 (2008).
Y. Ota, K. Fujii, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, Y. Terai, and Y. Fujiwara:
"Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy"
IUMRS International Conference in Asia 2008 (IUMRS-ICA2008), Nagoya Congress Center, Nagoya, December 9-13 (2008).
K. Shimada, Y. Terai, M. Shibata, K. Fujii, I. Kawayama, M. Tonouchi and Y. Fujiwara:
"Study on terahertz radiation from Er,O-codoped GaAs surface by time-domain spectroscopy"
Y. Ota, K. Fujii, Y. Ito, T. Kawasaki, K. Noguchi, A. Fujita, Y. Terai and Y. Fujiwara:
"Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy"
K. Yamaoka, Y. Terai, N. Yamashita, T. Yamaguchi and Y. Fujiwara:
"Structural and luminescent properties of Cu-doped ZnO thin films by plasma-enhanced chemical vapor deposition with RF sputtering"
Y. Fujiwara:
"Er,O-codoped GaAs-based 1.5 um light-emitting diodes with extremely stable emission wavelength"
The 13th Academic Exchange Seminar between Osaka University and Shanghai Jiao Tong University, Icho-kaikan, Osaka University, Suita, October 8 (2008).
M. Fujisawa et al.:
"ESR measurements of photoluminescent material GaAs: Er,O ?Er concentration effect-"
Workshop on Information, Nano and Photonics Technology 2008, Kobe Japan, November(2008).