Y. Ota, K. Fujii, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, Y. Terai, and Y. Fujiwara:
"Optical properties of GaInP/GaAs:Er,O/GaInP laser diodes grown on p-type GaAs substrates by organometallic vapor phase epitaxy"
IOP Conference Series: Materials Science and Engineering 1 (2009) 012022/1-4.
Y. Terai, K. Noda, S. Hashimoto, and Y. Fujiwara:
"Photoreflectance study of β-FeSi2 epitaxial films grown by molecular beam epitaxy"
Journal of Physics: Conference Series 165 (2009) pp. 012023/1-4.
H. Sakaguchi, T. Mishima, T. Meguro, Y. Otoki and Y. Fujiwara:
"Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy"
Journal of Physics: Conference Series 165 (2009) pp. 012024/1-4.
Y. Fujiwara, Y. Terai and A. Nishikawa:
"Development of new-type 1.5 um light-emitting devices based on Er, O-codoped GaAs"
Journal of Physics: Conference Series 165 (2009) pp. 012025/1-6.
H. Kasai, A. Nishikawa, Y. Terai and Y. Fujiwara:
"Luminescence Properties of Eu-implanted GaN-based Semiconductors"
Journal of Physics: Conference Series 165 (2009) pp. 012026/1-4.
K. Yamaoka, Y. Terai, T. Yamaguchi, H. N. Ngo, T. Gregorkiewicz, and Y. Fujiwara:
"Metalorganic chemical vapor deposition of Er-doped ZnO thin films with 1.54 um photoluminescence"
Journal of Physics: Conference Series 165 (2009) pp. 012027/1-4.
Y. Terai, S. Hashimoto, K. Noda, and Y. Fujiwara:
"Epitaxial growth of Al-doped β-FeSi2 on Si(111) substrate by reactive deposition epitaxy"
Physica Status Solidi (c) 6(6) (2009) pp. 1488-1491.
Y. Terai, T. Tokuno, H. Ichida, Y. Kanematsu and Y. Fujiwara:
"Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature"
Optical Materials 31(9) (2009) pp. 1323-1326.
K. Noda, Y. Terai, S. Hashimoto, K. Yoneda, Y. Fujiwara:
"Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy"
Applied Physics Letters 94(24) (2009) pp. 241907/1-3.
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, Y. Fujiwara:
"Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection"
Appl. Phys. Exp. 2 (2009) pp. 071004/1-3.
Y. Terai, K. Yamaoka, T. Yamaguchi and Y. Fujiwara:
"Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition"
Journal of Vacuum Science and Technology 27(5) (2009) pp. 2248-2251.
Y. Fujiwara, K. Fujii, A. Fujita, Y. Ota, Y. Ito, T. Kawasaki, K. Noguchi, T. Tsuji, A. Nishikawa, and Y. Terai:
"Luminescence properties in Er,O-codoped GaAs light-emitting devices with double excitation mechanism"
Materials Research Society Symposium Proceedings, Rare-Earth Doping of Advanced Materials for Photonic Applications, Vol. 1111, edited by V. Dierolf, Y. Fujiwara, U. Hommerich, P. Ruterana, and J. M. Zavada (Materials Research Society, Pennsylvania, 2009) pp. 143-148.
A. Nishikawa, H. Kasai, T. Kawasaki, Y. Terai, Y. Fujiwara:
"Optical properties of Eu-implanted GaN and related-alloy semiconductors"
Journal of Physics: Conference Series 191 (2009) pp. 012028/1-4.
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai and Y. Fujiwara:
"Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE"
physica status solidi A (in press).
T. Kawasaki, A. Nishikawa, N. Furukawa, Y. Terai and Y. Fujiwara:
"Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy" physica status solidi (in press).
Y. Terai, K. Yamaoka, K. Yoshida, T. Tsuji and Y. Fujiwara:
"Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica E (in press).
Y. Terai, T. Tsuji, K. Noda, and Y. Fujiwara:
"Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation"
Physica E, (in press).
Y. Konaka, K. Ono, Y. Terai and Y. Fujiwara:
"Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy"
J. Cryst. Growth, (in press).
H. Tambo, S. Kimura, Y. Yamauchi, Y. Hiromura, Y.K. Zhou, S. Emura, S. Hasegawa and H. Asahi:
"Crystal growth and characterization of GaCrN nanorods on Si substrate"
J. Cryst. Growth 311 (2009) pp. 2962-2965.
S. Emura, K. Tokuda, S. Kobayashi, Y.K. Zhou, S. Hasegawa and H. Asahi:
"Broken symmetry of cage surrounding magnetic dopant Cr ion in cubic GaN"
J. Physics: Conf. Ser. 190 (2009) pp. 012102-1 /4.
Y. Honda, S. Hayakawa, S. Hasegawa and H. Asahi:
"Growth and characterization of Fe nanostructures on GaN"
Appl. Surf. Sci. 256 (2009) pp. 1069-1072.
M. Takahashi, Y. Hiromura, S. Emura, T. Nakamura Y.K. Zhou, S. Hasegawa and H Asahi:
"The third magnetic phase of GaGdN detected by SX-MCD"
AIP Conf. Proc. Ser. Vol.1199 (2010) pp. 411-412.
S. Emura, S. Kimura, K. Tokuda, Y.K. Zhou, S. Hasegawa and H Asahi:
"Local-orbital ordering on Cr3+ ions doped in GaN"
AIP Conf. Proc. Ser. Vol.1199 (2010) pp. 417-418.
Y.K Zhou, M. Takahashi, S. Emura, S. Hasegawa and H. Asahi:
"Annealing effect in GaDyN on optical and magnetic properties"
Journal of Superconductivity and Novel Magnetism 23 (2010) pp. 103-105.
Y.K. Zhou, S.W. Choi, S. Kimura, S. Emura, S. Hasegawa and H. Asahi:
"Structural and magnetic properties of GaGdN/GaN superlattice structures"
Thin Solid Films (in press).
M. Takahashi, Y.K. Zhou, S. Emura, T. Nakamura, S. Hasegawa, and H Asahi:
"Magnetic properties of GaGdN studied by SQUID and SX-MCD"
Journal of Superconductivity and Novel Magnetism (in press).
H. Ohta, M.Fujisawa, N. Souda, S.Okubo, E.Ohmichi, T.Sakurai, H.Kikuchi, T. Ono, H.Tanaka, K. Matsubayashi, Y. Uwatoko:
"Magnetic Susceptibility Measurement Under High Pressure and Magnetization Measurement of S=1/2 Dioptase Lattice Antiferromagnet"
J. Phys.:Conf. Series 150 (2009) pp. 042151.
M. Fujisawa, A. Asakura, S. Okubo, H. Ohta, S. Nishihara, T. Akutagawa, T. Nakamura, Y. Hosokoshi:
"Impurity effect of an S = 1/2 two leg spin ladder antiferromagnet [Ph(NH3)]([18]crown-6)[Ni(dmit)2] studied by ESR"
J. Phys.:Conf. Series 150 (2009) pp. 042034.
H. Ohta, W-M Zhang, S. Okubo, M. Fujisawa, T. Sakurai, Y. Okamoto, H. Yoshida and Z. Hiroi:
Phys. Status Solidi B 247(3) (2010) pp. 679-681.
H. Ohta, E. Ohmichi, S. Okubo, T. Sakurai, M. Fujisawa:
"Development of Multi-extreme ESR Measurement System in Kobe"
Low Temp. Phys. 159 (2010) pp. 302-306.
H. Ohta, O. Portugall, N. Ubrig, M. Fujisawa, H. Katsuno, E. Fatma, S. Okubo, Y.Fujiwara:
"Photoluminescence Measurement of Er,O-Codoped GaAs Under a Pulsed Magnetic Field up to 60 T"
J. Low Temp. Phys. 159 (2010) pp. 203-207.
Y. Fujiwara, Y. Ota, Y. Ito, K. Noguchi, T. Tsuji, T. Kawasaki, A. Nishikawa and Y. Terai:
"Electroluminescence properties of 1.5 µm light-emitting devices with Er,O-codoped GaAs"
25th International Conference on Defects in Semiconductors (ICDS25), Mon-2.3po, St. Petersburg, Russia, July 20-24 (2009).
Y. Terai, T. Tsuji, K. Noda, and Y. Fujiwara:
"Photoluminescence properties of Er-doped β-FeSi2 grown by ion beam synthesis methods"
14th International Conference on Modulated Semiconductor structures (MSS-14) , Mo-mP18, Kobe, Japan, July 19-24 (2009).
Y. Terai, K. Yamaoka, K. Yoshida, A. Yoshida and Y. Fujiwara:
"Luminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition"
S. Hasegawa, H. Tani, M. Kin, Y. K. Zhou and H. Asahi
"Enhancement of saturation magnetization in GaGdN/AlGaN multiple quantum wells grown by PA-MBE"
14th International Conference on Modulated Semiconductor Structures (MSS-14), Kobe, Japan, July 19-24, 2009.
H. Ohta:
"Photoluminescence measurement of Er,O-codoped GaAs under a pulsed magnetic filed up to 60T"
9th International Conference on Research in High Magnetic Fields, Dresden, Germany, July22-25 (2009).
M. Fujisawa:
"Magnetic properties of magnetic semiconductor GaAs:Er,O studied by ESR"
International Conference on Magnetism, Karlsruche, Germany, July26-31 (2009).
T. Tsuji, T. Mahara, H. Ichida, A. Nishikawa, Y. Terai, Y. Kanematsu and Y. Fujiwara:
"Optical Gain in Er,O-codoped GaAs"
T. Kawasaki, A. Nishikawa, N. Furukawa, Y. Terai and Y. Fujiwara:
"Growth Temperature Dependence on Luminescence Properties of Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy"
K. Noda, K. Yoneda, Y. Terai and Y. Fujiwara :
"Direct Bandgap Modifications in β-FeSi2 Epitaxial Films Revealed by Photoreflectance Measurement;
A.Nishikawa, K. Noguchi, T. Tsuji, R. Wakamatsu, Y. Ota, Y. Terai and Y. Fujiwara:
"Electroluminescence Properties of GaInAs/Er,O-codoped GaAs/GaInP Double Quantum Well Laser Diodes;
M. Kin, S. Hasegawa, D. Abe, and H. Asahi
"Growth and characterization of GaGdN/AlGaN heterostructures"
5th Handai Nanoscinece and Nanotechnology International Symposium, Osaka University, Osaka, September 1-3, 2009.
H. Tani, S. Hasegawa Y.K. Zhou S. Emura and H. Asahi
"Structural and optical properties of rare-earth element Gd doped GaN"
5th Handai Nanoscinece and Nanotechnology International Symposium, Osaka University, Osaka, September 1-3, 2009.
Y. K. Zhou, H. Ichihara, S. Emura, S. Hasegawa and H. Asahi
"Large Zeeman splitting in low-temperature-grown GaDyN"
International Symposium of Post-Silicon Materials and Devices Research Alliance Project, Osaka University, Osaka, September 5-6, 2009.
H. Tambo, S. Hasegawa, Y.K. Zhou, S. Emura and H. Asahi
"Growth and Characterization of GaGdN Nanorods"
International Symposium of Post-Silicon Materials and Devices Research Alliance Project, Osaka University, Osaka, September 5-6, 2009.
Y. Fujiwara, K. Noguchi, T. Tsuji, T. Kawasaki, A. Nishikawa and Y. Terai:
"1.5 µm Er-2O electroluminescence in laser diodes with Er,O-codoped GaAs"
A.Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai and Y. Fujiwara:
"Room-temperature electroluminescence properties of p-GaN/Eu-doped GaN/ n-GaN light-emitting diodes"
T. Kawasaki, A. Nishikawa, N. Furukawa, Y. Terai and Y. Fujiwara:
"Effect of Growth Temperature on Eu-Doped GaN Layers Grown by Organometallic Vapor Phase Epitaxy;
8th International Conference on Nitride Semiconductors (ICNS), ThP18, Jeju International Convention Center, Korea, October 18-23(2009).
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai and Y. Fujiwara:
"Low-Voltage Operation of Current-Injection Red Emission from P-GaN/Eu-Doped GaN/N-GaN Light-Emitting Diodes;
8th International Conference on Nitride Semiconductors (ICNS), ThP118, Jeju International Convention Center, Korea, October 18-23(2009).
H. Katsuno:
"Photoluminescence measurement of GaAs:Er,O under high magnetic field"
Electron Magnetic Resonance of Strongly Correlated Spin Systems (EMRSCS2009), Kobe, Japan, Nov8-9 (2009).
F.Elmasry:
"Laser excitation and ESR studies of photoluminescent semiconductor GaAs:Er,O"
Electron Magnetic Resonance of Strongly Correlated Spin Systems (EMRSCS2009), Kobe, Japan, Nov8-9 (2009).
H. Asahi, S. Hasegawa, Y.K. Zhou and S. Emura (INVITED)
"Growth and characterization of GaN-based room-temperature ferromagnetic semiconductors for semiconductor spintronics"
11th Takayanagi Kenjiro Memorial Symposium, Research Institute of Electronics, Shizuoka University, November 12-13, 2009.
T. Tozuka, Y. Terai, K. Noguchi, A. Nishikawa, I. Kawayama, M. Tonouchi, and Y. Fujiwara:
"Enhancement of terahertz radiation from Er,O-codoped GaAs/undoped GaAs surface;
M. Fujisawa:
"Magnet-optical study of magnetic semiconductor GaAs:Er,O"
Workshop on Information, Nano and Photonics Technology 2009, Kobe, Japan, Dec.1-2 (2009).
F.Elmasry:
"ESR study of GaAs:Er,O under illumination"
Workshop on Information, Nano and Photonics Technology 2009, Kobe, Japan, Dec.1-2 (2009).
S.N.M. Tawil, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa and H. Asahi
"Synthesis and Characterization of Gd-doped InGaN Thin Films and Superlattice Structure"
IEEE International NanoElectronics Conference (INEC 2010), Hong Kong, China, January 3-8, 2010.
D. Krishnamurthy, S.N.M. Tawil, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa and H. Asahi
"Studies on MBE grown Gd doped InGaN Epilayers and Superlattices for Applications in Longer Emitting Spintronics Devices"
13th SANKEN International Symposium, Osaka International Airport Conference Hall, Osaka, January 8, 2010.
S. Hasegawa, H. Tani, M. Kin, Y.K. Zhou and H. Asahi
"MBE growth of GaGdN/AlGaN multiple quantum wells an their magnetic properties"
13th SANKEN International Symposium, Osaka International Airport Conference Hall, Osaka, January 8, 2010.
Y. Terai, K. Yoshida, M. H. Kamarudin and Y. Fujiwara:
"Growth of Eu-doped ZnO by sputtering-assisted metalorganic chemical vapor deposition"
2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2010), Nagoya, Japan, March 9-10 (2010).
T. Kawasaki, N. Furukawa, H. Kasai, A. Nishikawa, Y. Terai, and Y. Fujiwara:
"Time-resolved photoluminescence in Eu-implanted GaN"
K. Noguchi, Y. Ota, T. Tsuji, A. Nishikawa, Y. Terai, and Y. Fujiwara: InGaAs
T. Tsuji, T. Mahara, H. Ichida, A. Nishikawa, Y. Terai, Y. Kanematsu, and Y. Fujiwara:
"Optical gain in Er,O-codoped GaAs"
T. Tozuka, K. Shimada, Y. Terai, K. Noguchi, A. Nishikawa, I. Kawayama, M. Tonouchi, and Y. Fujiwara:
"Terahertz radiation properties of Er,O-codoped GaAs grown by organometallic vapor phase epitaxy"
K. Yoshida, Y. Terai, K. Yamaoka, A. Yoshida, and Y. Fujiwara:
"Photoluminescence properties of Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
K. Noda, K. Yoneda, Y. Terai, and Y. Fujiwara:
"Band-gap modifications of β-FeSi2 epitaxial films grown by molecular beam epitaxy"
R. Kakimi, S. Tawil, D. Krishnamurthy, S. Hasegawa, and H. Asahi
"Growth of Gd doped InGaN by ECR plasma assisted molecular beam epitaxy and its characterization"
28th Electronic Materials Symposium, Biwako, Shiga, July 8-10, 2009.
Y.K. Zhou, M. Almokhtar, H. Tani, H. Kubo, N. Mori, S. Emura, S. Hasegawa and H. Asahi
"Large Zeeman splitting in GaGdN/AlGaN ferromagnetic semiconductor double quantum well superlattices"
14th Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors (PASPS-14), Hiyoshi, Tokyo, Japan, December 21-22, 2009.
Fatma Elmasry:
Siti Nooraya:
"MBE growth and characterization of Gd-doped InGaGdN layers"