H. Ohta, O. Portugall, N. Ubrig, M. Fujisawa, H. Katsuno, E. Fatma, S. Okubo, and
Y. Fujiwara:
"Photoluminescence measurement of Er,O-codoped GaAs under a pulsed magnetic field up to 60 T"
Journal of Low Temperature Physics 159 (2010) pp. 203-207.
M. Fujisawa, A. Asakura, F. Elmasry, S. Okubo, H. Ohta, and Y. Fujiwara:
"Magnetic properties of magnetic semiconductor GaAs:Er,O studied by ESR"
Journal of Physics: Conference Series 200 (2010) 062005/1-4.
H. Kasai, A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara:
"Improved Eu luminescence properties in Eu-doped GaN grown on GaN substrates by
organometallic vapour phase epitaxy"
Japanese Journal of Applied Physics 49(4) (2010) pp. 048001/1-2.
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Rare-earth-doped semiconductor-based light-emitting diodes operating at room temperature"
e-Journal of Light Emitting Diode 2(1) (2010) pp. W-II-2/1-4.
Y. Konaka, K. Ono, Y. Terai, and Y. Fujiwara:
"Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy"
Journal of Crystal Growth 312 (2010) pp. 2056-2059.
A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara:
"Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE"
Physica Status Solidi A 207(6) (2010) pp. 1397-1399.
T. Kawasaki, N. Furukawa, A. Nishikawa, Y. Terai, and Y. Fujiwara:
"Effect of growth temperature on Eu-doped GaN layers grown by organometallic vapor phase epitaxy"
Physica Status Solidi C 7(7-8) (2010) pp. 2040-2042.
A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:
"Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy"
Applied Physics Letters 97(5) (2010) pp. 051113/1-3.
Y. Terai, T. Tsuji, K. Noda, and Y. Fujiwara:
"Photoluminescence properties of Er-doped β-FeSi2 grown by ion beam synthesis methods"
Physica E 42 (2010) pp. 2846-2848.
Y. Terai, K. Yamaoka, K. Yoshida, A. Yoshida and Y. Fujiwara:
"Photoluminescence properties of Eu-doped ZnO films grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica E 42 (2010) pp.2834-2836.
K. Hatasako, F. Yamamoto, A. Uenishi, T. Kuroi, S. Maegawa, and Y. Fujiwara:
"ESD Robustness Improvement for Integrated DMOS Transistor - The different gate voltage dependence of It2 between VDMOS and LDMOS transistors-"
IEEJ Transactions on Electrical and Electronic Engineering (2010), in press
N. Furukawa, A. Nishikawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:
"Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy"
Physica Status Solidi A 208 (2010) pp.445-448.
Y. Terai, K. Yoshida, M. H. Kamarudin and Y. Fujiwara:
"Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
Physica Status Solidi C (2010), in press
"Lattice site location of optical centres in GaN:Eu LED material grown by organometallic vapor phase epitaxy"
Applied Physics Letters 97 (2010) pp.111911/1-3.
A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara:
"Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy"
Optical Materials (2010), in press
N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf:
"Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center"
Applied Physics Letters 98 (2011) pp.011102/1-3.
A. Nishikawa, T. Kawasaki, N. Furukawa, S. Anada, N.Woodward, V. Dierolf, S. Emura, H. Asahi, Y. Terai, and Y. Fujiwara:
"Growth temperature dependence of Eu-doped GaN by organometallic vapor phase epitaxy"
International Conference on Core Research and Engineering Science of Advanced Materials, Icho-Kaikan, Osaka, Japan, May 30-June 4 (2010).
Y. Terai, K. Yoshida, M. H. Kamarudin, and Y. Fujiwara:
"Photoluminescence properties of Eu3+ ions in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
37th International Symposium on Compound Semiconductors, TuP34, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
N. Furukawa, A. Nishikawa, T. Kawasaki, S. Anada, Y. Terai, and Y. Fujiwara:
"Atmospheric-pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy"
37th International Symposium on Compound Semiconductors, FrD1-1, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
M. Fujita, A. Nishikawa, Y. Terai, Y. Fujiwara and S. Noda:
"GaAs photonic nanocavities with erbium luminescent centers"
37th International Symposium on Compound Semiconductors, FrD3-4, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
T. Tozuka, Y. Terai. K. Noguchi, A. Nishikawa, I. Kawayama, M. Tonouchi and Y. Fujiwara:
"Optical characterization of Er-related trap level in Er,O-codoped GaAs"
37th International Symposium on Compound Semiconductors, FrP13, Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4 (2010).
A. Nishikawa, Y. Terai and Y. Fujiwara:
"Room-temperature red emission from light emitting-diodes with Eu-doped GaN grown by organometallic vapour phase epitaxy"
2010 European Materials Research Society Spring Meeting (E-MRS2007), 5.1, Strasbourg, France, June 7-11 (2010).
"Europium incorporation in GaN grown by metal organic chemical vapor deposition"
2010 European Materials Research Society Spring Meeting (E-MRS2007), 5.2, Strasbourg, France, June 7-11 (2010).
N. Woodward, V. Dierolf, A. Nishikawa, and Y. Fujiwara:
"Site selective excitation pathways of in-situ doped Eu:GaN grown by MOCVD"
2010 European Materials Research Society Spring Meeting (E-MRS2007), 8.12, Strasbourg, France, June 7-11 (2010).
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature"
Third International Symposium on Growth of III-Nitrides (ISGN3), WE4-2, Montpellier, France, July 4-7 (2010).
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy"
15th International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium, St. Petersburg, Russia, September 27-October 1 (2010).
Y. Fujiwara, A. Nishikawa, and Y. Terai:
"Recent progress in rare-earth-doped semiconductors"
2010 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 12.4, Portland, USA, May 17-20 (2010).
A. Nishikawa, T. Kawasaki, N. Furukawa, S. Anada, N.Woodward, V. Dierolf, S. Emura, H. Asahi, Y. Terai, and Y. Fujiwara:
"Growth temperature dependence of Eu-doped GaN by organometallic vapor phase epitaxy"
International Conference on Core Research and Engineering Science of Advanced Materials, Icho-Kaikan, Osaka, Japan, May 30-June 4 (2010).
Y. Fujiwara, Y. Terai and A. Nishikawa:
"New development in rare-earth-doped semiconductors: room-temperature operation of light-emitting diodes exhibiting rare-earth emission under current injection"
T. Tsuji, Y. Terai, K. Yoshida, M. H. Kamarudin, and Y. Fujiwara:
"Growth of Eu-doped ZnO by sputtering-assisted metalorganic chemical vapor deposition"
N. Furukawa, A. Nishikawa, T. Kawasaki, S. Anada, N. Woodward, V. Dierolf, Y. Terai, and Y. Fujiwara:
"Growth temperature dependence of Eu-doped GaN grown by organometallic vapor phase epitaxy"
T. Tozuka, Y. Terai, R. Wakamatsu, A. Nishikawa, I. Kawayama, M. Tonouchi, and Y. Fujiwara:
"Enhanccement of terahertz radiation from Er,O-codoped GaAs /undoped GaAs surface"