K. Fujisawa, I. Onishi and Y. Fujiwara:
"Edge-light backlight unit using optically patterned film"
Japanese Journal of Applied Physics 46(1) (2007) pp. 194-199.
Y. Fujiwara, K. Nakamura, S. Takemoto, J. Sugino, Y. Terai, M. Suzuki and M. Tonouchi:
"Direct observation of picosecond-scale energy-transfer processes in Er,O-codoped GaAs by pump-probe reflection technique"
Physics of Semiconductors, AIP Conference Proceedings, 893, edited by W. Jantsch and F. Schaffler (AIP, New York, 2007) pp. 245-246.
K. Yamaoka, N. Okada, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Influence of plasma gases on insulating properties of low-temperature deposited SiOCH films by remote plasma-enhanced chemical vapor deposition"
Japanese Journal of Applied Physics 46(4B) (2007) pp. 1997-2000.
K. Yasutake, N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe and Y. Fujiwara:
"Characterization of epitaxial silicon films grown by atmospheric pressure plasma chemical vapor deposition using porous carbon electrode "
Japanese Journal of Applied Physics 46(4B) (2007) pp. 2510-2515.
K. Fujisawa, I. Ohnishi and Y. Fujiwara:
"Edge-Light Backlight Unit Using Optically Patterned Film Placed Plural LEDs on Side as Light Source"
Japanese Journal of Applied Physics 46(38) (2007) pp. L933-L935.
Y. Terai, Y. Maeda and Y. Fujiwara:
"Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements"
Thin Solid Films 515(22) (2007) pp. 8129-8132.
K. Yamaoka, Y. Terai, N. Okada, Y. Yamaguchi, Y. Yoshizako and Y. Fujiwara:
"Low Temperature Deposition of Amorphous Carbon Films for Surface Passivation of Carbon-Doped Silicon Oxide"
Advanced Materials Research 26-28 (2007) pp. 645-648.
Y. Fujiwara, S. Takemoto, K. Nakamura, K. Shimada, M. Suzuki, K. Hidaka, Y. Terai and M. Tonouchi:
"Ultrafast carrier-trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe technique"
Physica B 401-402 (2007) pp. 234-237.
Y. Fujiwara:
"New approach to Er,O-codoped GaAs based light-emitting devices with extremely stable wavelength"
2007 European Materials Research Society Spring Meeting (E-MRS2007), C-8.5, Strasbourg, France, May 28-June 1 (2007).
Y. Fujiwara:
"Injection-type light-emitting devices fabricated by atomically controlled doping of Er to GaAs"
Y. Fujiwara, S. Takemoto, M. Suzuki, K. Shimada, K. Hidaka, Y. Terai and M. Tonouchi:
"Ultrafast carrier-trapping in Er-doped and Er,O-codoped GaAs revealed by pump and probe transmission technique"
24th International Conference on Defects in Semiconductors (ICDS24), TO4-4, Albuquerque, USA, July 22-27 (2007).
K. Shimada, Y. Terai, S. Takemoto, M. Suzuki, M. Tonouchi, and Y. Fujiwara:
"Carrier dynamics in Er,O-codoped GaAs revealed by time-resolved terahertz emission measurements"
The Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics (IRMMW-THz2007), TueP5-41, Cardiff, UK, September 2-7, 2007.
Y. Konaka, Y. Terai, K. Ono, E. Taguchi, H. Mori and Y. Fujiwara:
"TED analysis of CuPtB-type ordering in InGaAsP grown by OMVPE"
Handai Nanoscience and Nanotechnology International Symposium -Spin, Photonic, and Molecular Devices in Quantum limit-, P-1-9, Toyonaka, Osaka, September 26-28, 2007.
M. Fujisawa, A. Asakura, S. Okubo, H. Ohta and Y. Fujiwara:
"Electron spin resonance study of Er-concentration dependence on the local structure of the Er-centers in GaAs:Er,O"
Handai Nanoscience and Nanotechnology International Symposium -Spin, Photonic, and Molecular Devices in Quantum limit-, P-2-11, Toyonaka, Osaka, September 26-28, 2007.
Y. Terai, K. Hidaka and Y. Fujiwara:
"Organometallic vapor phase epitaxy of Er,O-codoped GaAs using trisdipivaloylmethanatoerbium"
2nd International Symposium on Atomic Technology (ISAT2), P10, Awaji Island, Japan, October 1-2, 2007.
K. Shimada, S. Takemoto, K. Hidaka, Y. Terai, M. Tonouchi, and Y. Fujiwara:
"Ultrafast photoexcited carrier dynamics in GaAs:Er,O by pump and probe transmission spectroscopy"
34th International Symposium on Compound Semiconductors (ISCS 2007), MoD-P3, Kyoto, Japan, October 15-17, 2007.
A. Fujita, T. Tokuno, K. Hidaka, K. Fujii, K. Tachibana, H. Ichida, Y. Terai, Y. Kanematsu and Y. Fujiwara:
"Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy"
34th International Symposium on Compound Semiconductors (ISCS 2007), MoD-P4, Kyoto, Japan, October 15-17, 2007.
K. Fujii, K. Hidaka, D. Yamamoto, Y. Terai and Y. Fujiwara:
"GaAs emission from GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor Phase epitaxy"
34th International Symposium on Compound Semiconductors (ISCS 2007), TuA-II3, Kyoto, Japan, October 15-17, 2007.
S. Hashimoto, Y. Terai, A. Kakiuchi and Y. Fujiwara:
"Epitaxial growth of Al-doped β-FeSi2 thin film on Si(111) substrate by molecular beam epitaxy"
34th International Symposium on Compound Semiconductors (ISCS 2007), TuD-P11, Kyoto, Japan, October 15-17, 2007.
K. Yamaoka, Y. Terai and Y. Fujiwara:
"Effects of RF power on impurity-doped zinc oxide films by plasma-enhanced chemical vapor deposition"
34th International Symposium on Compound Semiconductors (ISCS 2007), ThE-P8, Kyoto, Japan, October 15-17, 2007.
M. Fujisawa, A. Asakura, S Okubo, H. Ohta, Y.Fujiwara:
"Er-concentration dependence in GaAs:Er,O studied by X-band ESR"
Kobe University Frontier Technology Forum 2007 Nanotechnology and Biotechnology for Next-Generation Photonics, P16, Kobe, Japan, November 1-2, 2007.
K. Yamaoka, Y. Terai, N. Okada, Y. Yamaguchi, Y. Yoshizako and Y. Fujiwara:
"Low temperature deposition of amorphous carbon films for surface passivation of carbon-doped silicon oxide"
6th Pacific Rim International Conference on Advanced Materials and Procession, P2-011, Jeju Island, Korea, November 5-9, 2007.
M. Fujisawa, A. Asakura, S. Okubo, H. Ohta, Y. Fujiwara:
"Er-concentration Effect in GaAs:Er,O studied by Electr on Spin Resonance"
A Joint Conference of the International Symposium on Electron Spin Science and the 46th Annual Meeting of the Society of Electron Spin Science and Technology, 1A11, Shizuoka, Japan. November 6-9, 2007.
M. Kato, M. Uchiyama, K. Higashi, S. D. Wu, M. Kondow and Y. Fujiwara:
"In-vacuum photoluminescence measurements of GaInNAs grown by molecular beam epitaxy"
S. Hashimoto, Y. Terai, A. Kakiuchi and Y. Fujiwara:
"Growth temperature dependence of Fe/Si(001) interface"
K. Yamaoka, N. Okada, T. Yamaguchi, Y. Yoshizako, Y. Terai and Y. Fujiwara:
"Low-temperature deposition of highly-insulating a-C:H films by plasma-enhanced chemical vapor deposition"
T. Yamaguchi, K. Yamaoka, Y. Yoshizako, N. Okada, Y. Terai and Y. Fujiwara:
"Surface passivation of room-temperature deposited SiOCH films by amorphous carbon thin films"
K. Shimada, S. Takemoto, K. Hidaka, Y. Terai, M. Tonouchi and Y. Fujiwara:
"Ultrafast trapping processes of photoexcited carriers in Er,O-codoped GaAs revealed by pump and probe transmission technique"
A. Fujita, T. Tokuno, K. Hidaka, K. Fujii, K. Tachibana, H. Ichida, Y. Terai, Y. Kanematsu and Y. Fujiwara:
"Temperature dependence of Er-related PL intensity in Er,O-codoped GaAs"
K. Fujii, K. Hidaka, D. Yamamoto, Y. Terai and Y. Fujiwara:
"GaAs lasing characteristics of GaInP/Er,O-codoped GaAs/GaInP light emitting devices grown by organometallic vapor phase epitaxy"
Y. Fujiwara:
"Atomically controlled rare-earth doping to III-V semiconductors and its application to new-type light-emitting devices"
K. Yamaoka, Y. Terai and Y. Fujiwara:
"Room-temperature deposition of highly-insulating SiOCH films by plasma-enhanced chemical vapor deposition using tetraethoxysilane"
M. Fujisawa, A. Asakura, S. Okubo, H. Ohta and Y. Fujiwara:
"ESR study of Er-concentration effect in photoluminescence material GaAs:Er,O"
Y. Fujiwara:
"New development in rare-earth doped semiconductors: quantum properties revealed by control of atomic configuration"