B. Mitchell, D. Timmerman, J. Poplawsky, W. Zhu, D. Lee, R. Wakamatsu, J. Takatsu,
M. Matsuda, W. Guo, K. Lorenz, E. Alves, A. Koizumi, V. Dierolf, and Y. Fujiwara: "Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications"
Scientific Reports 6 (2016) pp. 8808/1-8. http://www.nature.com/articles/srep18808
H. Taguchi, S. Miyake, A. Suzuki, S. Kamiyama, and Y. Fujiwara: "Evaluation of crystallinity of GaN epitaxial layer after wafer dicing process"
Materials Science in Semiconductor Processing 41 (2016) pp. 89-91. http://www.sciencedirect.com/science/article/pii/S1369800115301190
M. Ishii, A. Koizumi, and Y. Fujiwara: "Trapping of injection charges in emission centers of GaN:Eu red LED characterized with 1/f noise involved in forward current"
Japanese Journal of Applied Physics 55 (2016) pp. 015801/1-4. http://iopscience.iop.org/article/10.7567/JJAP.55.015801
J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak: "Study of defects in GaN in situ doped with Eu3+ ion grown by OMVPE"
Journal of Electronic Materials 45 (2016) pp. 2001-2007. http://link.springer.com/article/10.1007/s11664-016-4337-4
T. Inaba, D. Lee, R. Wakamatsu, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, A. Koizumi, and Y. Fujiwara: "Substantial enhancement of red emission intensity by embedding Eu-doped GaN into a microcavity"
AIP Advances 6 (2016) pp. 045105/1-6. http://dx.doi.org/10.1063/1.4946849
W. Zhu, B. Mitchell, D. Timmerman, A. Uedono, A. Koizumi, and Y. Fujiwara: "Enhanced photo/electroluminescence properties of GaN:Eu through optimization of the growth conditions and defect environment"
APL Materials 4 (2016) pp. 056103/1-7. http://dx.doi.org/10.1063/1.4950826
N. N. Ha, A. Nishikawa, Y. Fujiwara, and T. Gregorkiewicz: "Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method"
Journal of Science: Advanced Materials and Devices 1 (2016) pp. 220-223. http://dx.doi.org/10.1016/j.jsamd.2016.06.004
T. Kojima, S. Takano, R. Hasegawa, D. Timmerman, A. Koizumi, M. Funato, Y. Kawakami, and Y. Fujiwara: "Control of GaN facet structures through Eu doping toward achieving semipolar {1-101} and {2-201} InGaN/GaN quantum wells"
Applied Physics Letters 109 (2016) pp. 182101/1-4. http://dx.doi.org/10.1063/1.4965844
J. Lin, L. Gomez, C. de Weerd, Y. Fujiwara, T. Gregorkiewicz, and K. Suenaga: "Direct observation of bandstructure modifications in nanocrystals of CsPbBr3 perovskite"
Nano Letters 16 (2016) pp. 7198-7202. http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b03552
J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak: "Optical and Electrical Study of Defects in GaN in situ doped with Eu3+ ion grown by OMVPE"
Journal of Electronic Materials 45 (2016) pp. 6355-6362. http://dx.doi.10.1007/s11664-016-4983-6
M. Ishii, A. Koizumi, and Y. Fujiwara: "Dimerization of emission centers in Eu-doped GaN red light-emitting diode: cooperative charge capturing using valence states coupling"
Journal of Physics: Condensed Matter 29 (2016) pp. 025709/1-6. http://iopscience.iop.org/article/10.1088/0953-8984/29/2/025702
I. Fragkos, C. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu: "Rare-earth-doped GaN-based light-emitting diode: a model of current injection efficiency"
SPIE Photonics West, 9742-5, San Francisco, California, USA, February 13-18 (2016).
Y. Fujiwara, T. Nunokawa, M. Matsuda, W. Zhu, T. Kojima, and A. Koizumi: [Invited Talk] "Valence state control of Eu ions in Eu-doped GaN grown by organometallic vapor phase epitaxy"
Workshop on Computational Nano-Materials Design and Realization for Energy-Saving and Energy-Creation Materials, I-21, Osaka University, Osaka, Japan, March 25-26 (2016).
T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara: "Significant enhancement of photoluminescence intensity from Eu-doped GaN embedded in resonant cavity"
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), TuP24, Todaiji Temple Cultural Center, Nara, Japan, March 28-31 (2016).
T. Kojima, K. Sakuragi, M. Ogawa, N. Fujioka, A. Koizumi, S. Noda, and Y. Fujiwara: "Emission properties of Er ions in GaAs modulated by photonic crystal nanocavities"
17th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN17), TuP27, Todaiji Temple Cultural Center, Nara, Japan, March 28-31 (2016).
Y. Kashiwagi, M. Saitoh, T. Hasegawa, K. Matsukawa, T. Shigemune, A. Koizumi,T. Kojima, Y. Fujiwara, H. Kakiuchi, N. Aoyagi, Y. Yoshida, and M. Nakamoto: [Invited Talk] "Direct electrode patterning on layered GaN on sSapphire substrate by using needle-type dispenser system of Ag nanoinks"
2016 International Conference on Electronics Packaging (ICEP2016), TB3-2, Sapporo, Japan, April 20-22 (2016).
E. M.L.D. de Jong, L. G. Navascués, T. Gregorkiewicz, G. Yamashita, M. Ashida, and Y. Fujiwara: "Auger recombination in CsPbBr3 nanocrystals"
2016 E-MRS Spring Meeting, Lille, France, May 2-6 (2016).
Y. Fujiwara, W. Zhu, B. Mitchell, D. Timmerman, Uedono, and A. Koizumi: [Invited Talk] "Enhanced red photo/electroluminescence from Eu-doped GaN through optimization of defect environment"
4th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA¡Ç16), 20p-LED5-1, Pacifico-Yokohama, Yokohama, Japan, May 18-20 (2016).
Y. Fujiwara, T. Inaba, B. Mitchell, T. Kojima, and A. Koizumi: [Invited Talk] "Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN"
International Conference on Processing & Manufacturing of Advanced Materials; Processing, Fabrication, Properties, Applications (THERMEC¡Ç2016), H4, Graz, Austria, May 29-June 3 (2016).
Y. Fujiwara, T. Inaba, T. Kojima, B. Mitchell, A. Capretti, T. Gregorkiewicz, and A. Koizumi: [Invited Talk] "Enhanced red emission from Eu ions embedded in a GaN resonant optical microcavity"
Collaborative Conference on 3D and Materials Research 2016 (CC3DMR2016), Incheon, Seoul, Korea, June 20-24 (2016).
J. Wang, A. Koizumi, Y. Fujiwara, and W. M. Jadwisienczak: "Deep level transient spectroscopy study of Eu3+ ion in situ doped GaN epilayer grown by OMVPE"
58th Electronic Materials Conference, PS5, Newark, USA, June 22-24 (2016).
Y. Fujiwara: [Invited Talk]: "Towards highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN as an active layer"
Light Conference 2016, Changchun, China, July 4-8 (2016).
A. Koizumi and Y. Fujiwara: [Invited Talk] "Current understanding of Eu emission centers in Eu-doped GaN grown by organometallic vapor phase epitaxy"
9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9), Kyoto, Japan, August 1-5 (2016).
J. Takatsu, A. Koizumi, S. Yamanaka, M. Matsuda, T. Kojima, and Y. Fujiwara: "Using Eu emission to detect In segregation in InxGa1-xN"
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Tu3-T09-6, Nagoya, Japan, August 7-12 (2016).
R. Fuji, A. Koizumi, T. Inaba, and Y. Fujiwara: "N-polar Eu-doped GaN grown by organometallic vapor phase epitaxy"
18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), TuP-T09-21, Nagoya, Japan, August 7-12 (2016).
Y. Fujiwara: [Invited Talk] "Eu-Doped GaN for Highly Efficient Wavelength-Stable Red LEDs"
Defects in Semiconductors, Gordon Research Conference, Colby-Sawyer College, New London, USA, August 14-19 (2016).
T. Inaba, T. Kojima, G. Yamashita, M. Ashida, and Y. Fujiwara: "Quantitative analysis on energy transfer process for Eu luminescent centers in Eu-doped GaN"
International Workshop on Nitride Semiconductors (IWN2016), D1.11.05, Orlando, Florida, October 2-7 (2016).
W. Zhu, M. Ishii, A. Koizumi, and Y. Fujiwara: "Selective excitation of emission centers in of GaN/Eu-doped GaN multiple-nanolayer structures LED: Nanoscale design of active layer for dynamical control of injection charges"
International Workshop on Nitride Semiconductors (IWN2016), PS1.123'', Orlando, Florida, October 2-7 (2016).
T. Nunokawa, A. Koizumi, T. Sakurai, M. Matsuda, W. Zhu, H. Ohta, and Y. Fujiwara: "Valence state control of Eu ions in Eu-doped GaN and magnetic behaviors"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.5.06, Boston, USA, November 27-December 2 (2016).
M. Ogawa, N. Fujioka, K. Sakuragi, T. Kojima, A. Koizumi, and Y. Fujiwara: "High-Q photonic crystal double-heterostructure nanocavity with Er,O-codoped GaAs for low-threshold lasers"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.8.03, Boston, USA, November 27-December 2 (2016).
T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara: "Modulated optical properties of Eu-doped GaN in a GaN based microcavity"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.9.01, Boston, USA, November 27-December 2 (2016).
N. Hernandez, B. Mitchell, Y. Fujiwara, and V. Dierolf: "The role of charge carriers in the photoluminescence properties of Eu-doped GaN"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.9.02, Boston, USA, November 27-December 2 (2016).
W. Zhu, B. Mitchell, D. Timmerman, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara: "Growth and optical properties of GaN/Eu-doped GaN multilayer structures by low-temperature organometallic vapor phase epitaxy"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.9.03, Boston, USA, November 27-December 2 (2016).
B. Mitchell, W. Zhu, J. Poplawsky, A. Koizumi, V. Dierolf, and Y. Fujiwara: [Invited Talk] "The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.10.01, Boston, USA, November 27-December 2 (2016).
I. Fragkos, C. K. Tan, Y. Zhong, V. Dierolf, Y. Fujiwara, and N. Tansu: "The role of injection efficiency in Eu-doped GaN LED"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.10.02, Boston, USA, November 27-December 2 (2016).
M. Ishii, A. Koizumi, and Y. Fujiwara: "Dimerized emission centers in Eu-doped GaN red light-emitting diode: cooperative charge capturing and multiple satellite emission of Eu emission centers"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.10.03, Boston, USA, November 27-December 2 (2016).
T. Kojima, K. Sakuragi, M. Ogawa, N. Fujioka, A. Koizumi, and Y. Fujiwara: "Extremely improved emission properties of Er luminescent centers in GaAs-based photonic crystal nanocavities"
2016 MRS Fall Meeting, Symposium EM2: Rare-Earths in Advanced Photonics and Spintronics, EM2.11.02, Boston, USA, November 27-December 2 (2016).
H. Kogame, K. Okada, T. Kojima, and Y. Fujiwara: "Investigation on energy transfer process in Eu-doped GaN by two-wavelength excited photoluminescence measurements"
20th SANKEN International, The 15th SANKEN Nanotechnology Symposium, 4th KANSAI Nanoscience and Nanotechnology, 12th Handai Nanoscience and Nanotechnology International Symposium, P1-26, Knowledge Capital Congres Convention Center, Osaka, Japan, December 12-13 (2016).
N. Fujioka, T. Kojima, M. Ogawa, and Y. Fujiwara: "Enhancement of Er luminescence by coupling with photonic crystal nanocavities and its application to wavelength-stable lasers"
20th SANKEN International, The 15th SANKEN Nanotechnology Symposium, 4th KANSAI Nanoscience and Nanotechnology, 12th Handai Nanoscience and Nanotechnology International Symposium, P1-27, Knowledge Capital Congres Convention Center, Osaka, Japan, December 12-13 (2016).
H. Kamei, S. Takano, G. Yoshii, T. Kojima, and Y. Fujiwara: "Controllable energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition"
26th Annual Meeting of MRS-J, International Symposium A-3 ¡ÈAdvanced Functional Oxide Materials,¡È A3-O20-005, Yokohama Port Opening Plaza, Yokohama, Japan, December 20-22 (2016).
Y. Fujiwara, W. Zhu, and B. Mitchell: "Critical role of oxygen in Eu-doped GaN"
26th Annual Meeting of MRS-J, International Symposium A-3 ¡ÈAdvanced Functional Oxide Materials,¡È A3-O20-014, Yokohama Port Opening Plaza, Yokohama, Japan, December 20-22 (2016).
T. Inaba, T. Kojima, A. Koizumi, and Y. Fujiwara: "Significant enhancement of emission intensity from Eu ions embedded in a GaN microcavity,"
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H. Ohta, S. Okubo, and Y. Fujiwara: "Electron spin resonance studies of GaAs:Er,O (Chapter 5)"
Woodhead Publishing Series in Electronic and Optical Materials: Number 87, Rare Earth and Transition Metal Doping of Semiconductor Materials; Synthesis, Magnetic Properties and Room Temperature Spintronics, edited by V. Dierolf, I.T. Ferguson, and J.M. Zavada (Elsevier, Duxford, UK, 2016) pp. 169-194.
A. Koizumi, B. Mitchell, V. Dierolf, and Y. Fujiwara: "Growth of Eu-doped GaN and its magneto-optical properties (Chapter 8)"
Woodhead Publishing Series in Electronic and Optical Materials: Number 87, Rare Earth and Transition Metal Doping of Semiconductor Materials; Synthesis, Magnetic Properties and Room Temperature Spintronics, edited by V. Dierolf, I.T. Ferguson, and J.M. Zavada (Elsevier, Duxford, UK, 2016) pp. 259-280.