B. Mitchell. D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara: "Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology,"
Journal of Applied Physics 127 (2020) pp. 013102/1-9. https://doi.org/10.1063/1.5134050
D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Ashida, and Y. Fujiwara: "Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN,"
Physical Review Applied 13 (2020) pp. 014044/1-6. https://doi.org/10.1103/PhysRevApplied.13.014044
À¾ÅÄÉð¹°¡¢Æ£¸¶¹¯Ê¸¡¢»³ËÜϵס¢¾®Àô½ß¡¢È¬ÌÚůºÈ: "¶îÆ°ÅÅήÊÑÄ´¤Ë¤è¤ëÀÖ¿§È¾Æ³ÂΥ졼¥¶¤Î¥¹¥Ú¥Ã¥¯¥ëÄ㸺ˡ,"
Åŵ¤³Ø²ñÏÀʸ»ïC 14 (2020) pp. 181-186.
T. Nunokawa, Y. Fujiwara, Y. Miyata, N. Fujimura, T. Sakurai, H. Ohta, A. Masago, H. Shinya, T. Fukushima, K. Sato, and H. Katayama-Yoshida: "Valence states and the magnetism of Eu ions in Eu-doped GaN,"
Journal of Applied Physics 127 (2020) pp. 083901/1-7. https://doi.org/10.1063/1.5135743
T. Inaba, J. Tatebayashi, K. Shiomi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "GaN:Eu,O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors,"
ACS Applied Electronic Materials 2 (2020) pp. 732-738. https://doi.org/10.1021/acsaelm.9b00806
S. Ichikawa, N. Yoshioka, J. Tatebayashi, and Y. Fujiwara: "Room-temperature operation of near-infrared light emitting diode based on Tm-doped GaN with ultra-stable emission wavelength,"
Journal of Applied Physics 127 (2020) pp. 113103/1-9. https://doi.org/10.1063/1.5140715
M. Ogawa. J. Tatebayashi, N. Fujioka, R. Higashi, M. Fujita, S. Noda, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Quantitative evaluation of enhanced Er luminescence in GaAs-based two-dimensional photonic crystal nanocavities,"
Applied Physics Letters 116 (2020) pp. 181102/1-5. https://doi.org/10.1063/1.5142778
R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs,"
Journal of Applied Physics 127 (2020) pp. 233101/1-6. https://doi.org/10.1063/1.5144159
D. Denier van der Gon, D. Timmerman, Y. Matsude, S. Ichikawa, M. Ashida, P. Schall, and Y. Fujiwara: "Size dependence of quantum efficiency of red emission from GaN:Eu structures for application in micro-LEDs,"
Optics Letters 45 (2020) pp. 3973-3976. https://doi.org/10.1364/OL.397848
D. Timmerman, B. Mitchell, S. Ichikawa, J. Tatebayashi, M. Nagai, M. Ashida, and Y. Fujiwara: "Carrier dynamics and excitation of Eu3+ ions in GaN,"
Physical Review B 101 (2020) pp. 245306/1-5. https://doi.org/10.1103/PhysRevB.101.245306
D. Timmerman, E. Matsubara, L. Gomez, M. Ashida, T. Gregorkiewicz, and Y. Fujiwara: "Direct visualization and determination of the multiple exciton generation rate,"
ACS Omega 5 (2020) pp. 21506-21512. https://dx.doi.org/10.1021/acsomega.0c02067
B. Mitchell, H. Austin, D. Timmerman, V. Dierolf, and Y. Fujiwara: "Temporally modulated energy shuffling in highly interconnected nano-systems,"
Nanophotonics 9 (2020) pp. 0484/1-26. https://doi.org/10.1515/nanoph-2020-0484
D.Timmerman, Y. Matsude, Y. Sasaki, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Purcell-enhanced radiative rate of Eu3+ ions in GaN microdisks,"
Physical Review Applied 14 (2020) pp. 064059/1-7. https://doi.org/10.1103/PhysRevApplied.14.064059
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] "Semiconductors intra-center photonics; red LED using Eu-doped GaN with control of photon fields,"
SPIE Photonics West 2020, 11302-28, Moscone Center, San Francisco, USA, February 1-6 (2020).
B. Mitchell, V. Dierolf, and Y. Fujiwara: [Invited Talk] "Electrically controlled RGB color tunability in a single GaN-based LED material through manipulation of Eu3+ emission,"
SPIE Photonics West 2020, 11302-29, Moscone Center, San Francisco, USA, February 1-6 (2020).
S. Copelman, H. Austin, Y. Fujiwara, V. Dierolf, and B. Mitchell: "Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN,"
SPIE Photonics West 2020, 11302-68, Moscone Center, San Francisco, USA, February 1-6 (2020).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi: [Invited Talk] "High brightness and RGB integration of Eu-doped GaN-based red LEDs for ultrahigh-resolution micro-LED display,"
Society for Information Display's 2020 Virtual Display Week International Symposium, 47.3, on-line, August 3-7 (2020).
J. Tetabayashi, S. Ichikawa, and Y. Fujiwara: [Invited Talk] "Enhanced Eu luminescence in GaN:Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities,"
27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD20) -TFT Technologies and FPD Materials-, S3-3, on-line, September 1-4 (2020).
T. Iwaya, S. Ichikawa, M. Murakami, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Strongly enhanced red emission from Eu-doped GaN in a two-dimensional photonic-crystal nanocavity,"
2020 International Conference on Solid State Devices and Materials (SSDM2020), E-2-04, on-line, September 27-30 (2020).
A. Takeo, S. Ichikawa, S. Maeda, J. Tatebayashi, and Y. Fujiwara: "First demonstration of amplified spontaneous emission from Eu ions doped in GaN,"
2020 International Conference on Solid State Devices and Materials (SSDM2020), E-2-06, on-line, September 27-30 (2020).
D. Timmerman, M. Ashida, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Ultrafast carrier dynamics and excitation efficiency of Eu3+ ions in GaN:Eu"
Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ¡¢14a-A303-2¡¢¾åÃÒÂç³Ø»Í륥ã¥ó¥Ñ¥¹¡¢ÅìµþÅÔÀéÂåÅĶ衢3·î12-15Æü (2020).
D. Denier van der Gon, D. Timmerman, Y. Matsude, S. Ichikawa, J. Tatebayashi, Y. Fujiwara: "Size dependence of quantum efficiency of red emission from GaN:Eu for application in micro-LEDs"
Âè67²ó±þÍÑʪÍý³Ø²ñ½Õµ¨³Ø½Ñ¹Ö±é²ñ¡¢14a-A303-3¡¢¾åÃÒÂç³Ø»Í륥ã¥ó¥Ñ¥¹¡¢ÅìµþÅÔÀéÂåÅĶ衢3·î12-15Æü (2020).
N. Yokoyama, R. Tanabe, T. Hikosaka, S. Nunoue, S. Ichikawa, Y. Fujiwara, M. Uemukai, T. Tanikawa, and R. Katayama: "Fabrication of GaN polarity-inverted structure by inductively coupled plasma reactive ion etching and surface activated bonding"
39th Electronic Materials Symposium, P1-7, ¥ª¥ó¥é¥¤¥ó¡¢10·î7-9Æü (2020).
A. Takeo, S. Ichikawa, S. Maeda, J. Tatebayashi, and Y. Fujiwara: "Suppression of efficiency-droop for Eu-doped GaN using amplified spontaneous emission"
39th Electronic Materials Symposium, P2-21, ¥ª¥ó¥é¥¤¥ó¡¢10·î7-9Æü (2020).
T. Iwaya, S. Ichikawa, M. Murakami, J. Tatebayashi, and Y. Fujiwara: "Impact of fabrication errors on laser oscillation in GaN:Eu-based photonic crystal cavities"
39th Electronic Materials Symposium, P2-22, ¥ª¥ó¥é¥¤¥ó¡¢10·î7-9Æü (2020).
N. Nishiyama, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara: "Formation and optical characteristics of Tm,Yb-codoped ZnO nanowires on silicon substrates by sputtering-assisted MOCVD"
39th Electronic Materials Symposium, P3-11, ¥ª¥ó¥é¥¤¥ó¡¢10·î7-9Æü (2020).