A. Kiyoi, N. Kawabata, K. Nakamura, and Y. Fujiwara: "Influence of oxygen on trap-limited diffusion of hydrogen in proton-irradiated n-type silicon for power devices,"
Journal of Applied Physics 129 (2021) pp.025701/1-8. https://aip.scitation.org/doi/pdf/10.1063/5.0035260
S. Ichikawa, K. Shiomi, T. Morikawa, D. Timmerman, Y. Sasaki, J. Tatebayashi, and Y. Fujiwara: "Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut,"
Applied Physics Express 14 (2021) pp. 031008/1-4. https://doi.org/10.35848/1882-0786/abe603
J. Tatebayashi, M. Mishina, N. Nishiyama, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Formation and optical characteristics of ZnO:Eu/ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition,"
Japanese Journal of Applied Physics 60 (2021) pp. SCCE05/1-5. https://doi.org/10.35848/1347-4065/abebbb
S. Ichikawa, Y. Sasaki, T. Iwaya, M. Murakami, M. Ashida, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Enhanced red emission of Eu,O-codoped GaN embedded in a photonic crystal Nanocavity with hexagonal air hole,"
Physical Review Applied 15 (2021) pp. 034086/1-11. https://doi.org/10.1103/PhysRevApplied.15.034086
T. Nambu, T. Nagata, S. Umeda, K. Shiomi, Y. Fujiwara, T. Hikosaka, A. Mannan, F. R. G. Bagsican, K. Serita, I. Kawayama, M. Tonouchi, M. Uemukai1, T. Tanikawa, and R. Katayama: "Monolithic microcavity second harmonic generation device using low birefringence paraelectric material without polarity-inverted structure,"
Applied Physics Express 14 (2021) pp. 061004/1-5. https://doi.org/10.35848/1882-0786/abff9e
D. Timmerman, T. Iwaya, and Y. Fujiwara: "High-Q 1D rod-based nanocavities,"
Optics Letters 46 (2021) pp. 4260-4263. https://doi.org/10.1364/OL.434904
A. Kiyoi, N. Kawabata, K. Nakamura, and Y. Fujiwara: "Effect of carbon, oxygen, and intrinsic defects on hydrogen-1 related donor concentration in proton irradiated n-type silicon,"
Journal of Applied Physics 130 (2021) pp. 115704/1-8. https://doi.org/10.1063/5.0055769
T. Iwaya, S. Ichikawa, M. Murakami, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Design considerations of III-nitride-based two-dimensional photonic crystal cavities with crystallographically induced disorder,"
Applied Physics Express 14 (2021) pp. 122002/1-4. https://doi.org/10.35848/1882-0786/ac3545
A. Takeo, S. Ichikawa, S. Maeda, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Droop-free amplified red emission from Eu ions in GaN,"
Japanese Journal of Applied Physics 60 (2021) pp. 120905/1-6. https://iopscience.iop.org/article/10.35848/1347-4065/ac3b88
S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Demonstration of macrostep-free GaN bipolar device structures on vicinal (0001) substrates using Eu-doped GaN interlayers,"
8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), C10-01-06, on-line, March 1-3 (2021).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi: [Invited Talk] "Eu-doped GaN-based red LED for ultrahigh-resolution micro-LED displays,"
SPIE Photonics West 2021, 11686-36'', on-line, March 6-11 (2021).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi: [Invited Talk] "Semiconductors intracenter photonics; GaN-based red LED for next-generation micro-LED display,"
2021 ASEAN Joint Workshop, on-line, March 23-24 (2021).
J. Tatebayashi, T. Nakajima, N. Nishiyama, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Formation and optical characteristics of ZnO:Tm,Yb/ZnO nanowires towards photovoltaic applications,"
International Conference on Nano-photonics and Nano-optoelectronics 2021 (ICNN2021), ICNN-7-01, on-line, April 19-21 (2021).
Y. Fujiwara, D. Timmerman, S. Ichikawa, and J. Tatebayashi: [Invited Talk] "Purcell-effect-enhanced red emission from Eu ions in GaN cavities,"
10th Laser Display and Lighting Conference 2021 (LDC2021), LDC-6-03, on-line, April 19-22 (2021).
Z. Fang, R. Homi, M. Ogawa, Hirotake Kajii1, M. Kondow, J. Tatebayashi, and Y. Fujiwara: "Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er,O-codoped GaAs,"
31st International Conference on Defects in Semiconductors (ICDS-31), on-line, July 26-30 (2021).
D. Timmerman, S. Ishihara, D. D. Gon, S. Ichikawa, and Y. Fujiwara: "Size-dependent quantum efficiency of red emission from GaN:Eu micro-structures,"
31st International Conference on Defects in Semiconductors (ICDS-31), on-line, July 26-30 (2021).
H. Austin, B. Mitchell, K. Ortiz, M. Waite, D. Timmerman, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Defect mediated color-tunability in Eu-doped GaN-based LEDs,"
31st International Conference on Defects in Semiconductors (ICDS-31), on-line, July 26-30 (2021).
T. Otabara, J. Tatebayashi, S. Hasegawa, S. Ichikawa, M. Ashida, and Y. Fujiwara: "Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires grown by organometallic vapor phase epitaxy,"
34th International Microprocesses and Nanotechnology Conference (MNC 2021), 28B-3-2, on-line, October 26-29 (2021).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi: [Invited Talk] "Eu-doped GaN-based red LEDs as a key technology for micro-LED displays with ultrahigh resolution,"
28th International Display Workshops (IDW¡Ç21), PH1-1, on-line, December 1-3 (2022).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:¡Ú¾·ÂÔ¹Ö±é¡Û "New development of Eu-doped GaN red LED for ultrahigh-resolution micro-LED display"
40th Electronic Materials Symposium, SP-5, ¥ª¥ó¥é¥¤¥ó¡¢10·î11-13Æü (2021).
Y. Nakayama, M. Ogawa, Y. Harada, J. Tatebayashi, T. Kita, and Y. Fujiwara: "Anti-Stokes photoluminescence of GaAs:Er,O for laser cooling in photonic crystal nano-cavity"
40th Electronic Materials Symposium, P1-A08, ¥ª¥ó¥é¥¤¥ó¡¢10·î11-13Æü (2021).
S. Kobayashi, S. Ichikawa, K. Shiomi, J. Tatebayashi, and Y. Fujiwara: "Demonstration of Eu-doped GaN resonant cavity LEDs using conductive AlInN/GaN DBR mirrors with high reflectivity"
40th Electronic Materials Symposium, P1-A013, ¥ª¥ó¥é¥¤¥ó¡¢10·î11-13Æü (2021).
R. Komai, S. Ichikawa, H. Hanzawa, J. Tatebayashi, and Y. Fujiwara: "Efficient excitation states with above-bandgap energy in Tb-doped AlxGa1-xN grown by OMVPE"
40th Electronic Materials Symposium, P2-A08, ¥ª¥ó¥é¥¤¥ó¡¢10·î11-13Æü (2021).
S. Umeda, H. Honda, T. Nambu, S. Ichikawa, Y. Fujiwara, K. Shojiki, H. Miyake, M. Uemukai, T. Tanikawa, and R. Katayama: "Improved fabrication of transverse quasi-phase-matched double-layer polarity inverted AlN waveguide for 230-nm second harmonic generation"
40th Electronic Materials Symposium, P2-A014, ¥ª¥ó¥é¥¤¥ó¡¢10·î11-13Æü (2021).
T. Otabara, J. Tatebayashi, S. Hasegawa, S. Ichikawa, M. Ashida, and Y. Fujiwara: "Growth and optical characteristics of GaN:Eu/GaN core-shell nanowires by organometallic vapor phase epitaxy"
40th Electronic Materials Symposium, P2-B06, ¥ª¥ó¥é¥¤¥ó¡¢10·î11-13Æü (2021).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi: "Eu-doped GaN red LEDs for next-generation micro-LED displays,"
Journal of the Imaging Society of Japan 60 (2021).