A. Lesage, D. Timmerman, D. M. Lebrun, Y. Fujiwara, and T. Gregorkiewicz: "Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si nanocrystals,"
Applied Physics Letters 113 (2018) pp. 031109/1-4.
J. Tatebayashi, G. Yoshii, T. Nakajima, M. Mishina, and Y. Fujiwara: "Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition,"
Journal of Crystal Growth 503 (2018) pp. 13-19.
C. de Weerd, L. Gomez, A. Capretti, D. M. Lebrun, E. Matsubara, J. Lin, M. Ashida, F. C.M. Spoor, L. D.A. Siebbeles, A. J. Houtepen, K. Suenaga, Y. Fujiwara, and T. Gregorkiewicz: "Efficient carrier multiplication in CsPbI3 perovskite nanocrystals,"
Nature Communications 9 (2018) pp. 4199/1-9.
Y. Anzai, M. Yamamoto, S. Genchi, K. Watanabe, T. Taniguchi, S. Ichikawa, Y. Fujiwara, and H. Tanaka: "Broad range thickness identification of hexagonal boron nitride by colors,"
Applied Physics Express 12 (2019) pp. 055007/1-5.
J. Tatebayashi, T. Yamada, T. Inaba, S. Ichikawa, and Y. Fujiwara: "Enhanced luminescence efficiency of GaN:Eu-based lightemitting diodes by localized surface plasmons utilizing gold nanoparticles,"
Japanese Journal of Applied Physics 58 (2019) pp. SCCC09/1-6.
A. Lesage, D. Timmerman, T. Inaba, T. Gregorkiewicz, and Y. Fujiwara: "Enhanced light extraction efficiency of Eu-related emission from a nano-patterned GaN layer grown by MOCVD,"
Scientific Reports 9 (2019) pp. 4231/1-6.
B. Mitchell, R. Wei, J. Takatsu, D. Timmerman, T. Gregorkiewicz, W. Zhu, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, and V. Dierolf: "Color-tunablility in GaN LEDs based on atomic emission manipulation under current injection,"
ACS Photonics 6 (2019) pp. 1153-1161.
R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi,
S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Picosecond time-resolved dynamics of energy transfer between GaN and the various excited states of Eu3+ ions,"
Physical Review B 100 (2019) pp. 081201(R)/1-5.
J. Tatebayashi, T. Yamada, T. Inaba, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Localized-surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes utilizing silver nanoparticles,"
Applied Physics Express (2019).
N. Fujioka, M. Ogawa, T. Kishina, R. Higashi, M. Kondow, J. Tatebayashi and Y. Fujiwara: "Observation of anomalous Er emission in a Er,O-codoped GaAs-based two dimensional photonic crystal nanocavity,"
International Conference on Nano-photonics and Nano-optoelectronics 2018 (ICNN2018), Pacifco Yokohama, Japan, April 23-27 (2018).
K. Shiomi, T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Demonstration of red vertical-microcavity LEDs with Eu-doped GaN as an active layer,"
6th International Conference on Light-Emitting Devices and Their Industrial Applications 2018 (LEDIA2018), Pacifco Yokohama, Japan, April 23-27 (2018).
Y. Fujiwara, T. Inaba, K. Shiomi, and J. Tatebayashi: [Invited Talk] "Enhanced light output power from Eu-doped GaN narrow-band red light-emitting diodes by actively controlling photon fields"
233 Electrochemical Society (ECS) meetings, H01 ¡ÈWide Bandgap Semiconductor Materials and Device¡É, 1401, Seattle, USA, May 13-17 (2018).
J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara, and R. Katayama: "GaN rib waveguide directional coupler for waveguide Mach-Zehnder interferometer,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), 4C-1.6, Nara Kasugano International Forum, Japan, June 3-8 (2018).
T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara, and R. Katayama: "Design and fabrication of GaN monolithic doubly-resonant microcavity SHG device,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), 7B-1.4, Nara Kasugano International Forum, Japan, June 3-8 (2018).
J. Takatsu, R. Fuji, J. Tatebayashi, and Y. Fujiwara: "Morphological and optical properties of Tm-doped AlGaN on GaN and AlN templates grown by organometallic vapor phase epitaxy,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), 7C-1.1, Nara Kasugano International Forum, Japan, June 3-8 (2018).
T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Growth of thick (~600 nm) Al0.82In0.18N by temperature-modulation epitaxy for realization of GaN-based photonic crystal slab nanocavities,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), P2-24, Nara Kasugano International Forum, Japan, June 3-8 (2018).
G. Yoshii, T. Nakajima, M. Mishina, J. Tatebayashi, and Y. Fujiwara: "Formation and optical properties of Tm,Yb-codoped ZnO nanowires grown by sputtering-assisted metalorganic chemical vapor deposition,"
19th International Conference on Metalorganic Vapor Phase Epiaxy (ICMOVPEXIX), P2-54, Nara Kasugano International Forum, Japan, June 3-8 (2018).
V. Dierolf, R. Wei, B. Mitchell, and Y. Fujiwara: [Invited Talk] "Excitation of europium ions in gallium nitride: Mechanism, kinetics, and optimization,"
12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018), I15, Nara Kasugano International Forum, Japan, July 8-13 (2018).
Y. Sasaki, T. Inaba, J. Tatebayashi, and Y. Fujiwara: "Fabrication and optical properties of GaN:Eu-based microdisks,"
12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018), O44, Nara Kasugano International Forum, Japan, July 8-13 (2018).
Y. Fujiwara: [Invited Talk] "Development of semiconductors intra-center photonics,"
Light Conference 2018, Changchun, China, July 15-18 (2018).
Y. Fujiwara: [Invited Talk] "Towards semiconductors intracenter photonics,"
19th International Workshop on Inorganic and Organic Electroluminescence (EL2018) & 2018 International Conference on the Science and Technology of Emitting Displays and Lighting, IL-2, Meiji University, Tokyo, Japan, September 11-13 (2018).
Y. Fujiwara: [Invited Talk] "Development of semiconductors intra-center photonics,"
2nd JSPS workshop on Japan-Sweden frontiers in photon and spin functionalities of nanomaterials, Noboribetsu, Hokkaido, Japan, October 24-26 (2018).
Delphine M. Lebrun, H. Kogame, W. Zhu, B. Mitchell, and Y. Fujiwara: "Investigation of energy transfer between europium centers in GaN:Eu using combined excitation emission spectroscopy,"
International Workshop on Nitride Semiconductors 2018 (IWN2018), MoP-OD-30, Kanazawa, Japan, November 11-16 (2018).
S. Ichikawa, W. Zhu, B. Mitchell, T. Morikawa, J. Tatebayashi, T. Gregorkiewicz, and Y. Fujiwara: "Novel in-situ technique for dislocation-reduction during GaN growth using multi-layered GaN:Eu structure,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), GR8-2, Kanazawa, Japan, November 11-16 (2018).
S. Ichikawa, T. Morikawa, J. Tatebayashi, and Y. Fujiwara: "Drastic surface-smoothing on vicinal (0001) GaN film via strong surfactant effect of doped-Eu,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), GR8-3, Kanazawa, Japan, November 11-16 (2018).
Y. Matsude, T. Yamada, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Fabrication of two-dimensional GaN:Eu plasmonic crystals toward highly efficient red emitters,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), CR4-1, Kanazawa, Japan, November 11-16 (2018).
J. Tatebayashi, T. Yamada, T. Inaba, Y. Matsude, S. Ichikawa and Y. Fujiwara: "Surface-plasmon-enhanced GaN:Eu-based light-emitting diodes utilizing silver nanoparticles,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), OD6-4, Kanazawa, Japan, November 11-16 (2018).
T. Nambu, T. Komatsu, M. Uemukai, K. Shiomi, Y. Fujiwara, R. Katayama, J. Tajima, T. Hikosaka, and S. Nunoue: "Fabrication of GaN monolithic doubly-resonant microcavity SHG device on Si substrate,"
19th International Workshop on Inorganic and Organic Electroluminescence International Workshop on Nitride Semiconductors 2018 (IWN2018), OD7-2, Kanazawa, Japan, November 11-16 (2018).
M. Ogawa, N. Fujioka, T. Kishina, R. Higashi, M. Kondow, J. Tatebayashi and Y. Fujiwara: "Enhanced light emission in photonic crystal nanocavities with Er,O-codoped GaAs,"
International Symposium for Materials Scientists ¡ÈInspiration for Innovation by Interaction¡É (ISMS III), P28, Osaka University, Toyonaka, Osaka, Japan, December 3-4 (2018).
J. Takatsu, R. Fuji, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Morphological and optical properties of Tm-doped AlGaN on GaN and AlN templates grown by organometallic vapor phase epitaxy,"
International Symposium for Materials Scientists ¡ÈInspiration for Innovation by Interaction¡É (ISMS III), P29, Osaka University, Toyonaka, Osaka, Japan, December 3-4 (2018).
Y. Fujiwara, T. Inaba, K. Shiomi, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Wavelength-stable and narrow-band red LED for monolithic Mmicro-LED display,"
27th International Display Workshops (IDW'18), FMC1-2, Nagoya Congress Center, Nagoya, Japan, December 12-14 (2018).
S. Ichikawa, J. Takatsu, R. Fuji, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Excitation and relaxation processes of narrow-band blue emission in Tm-doped AlGaN revealed by time-resolved photoluminescence spectroscopy"
11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 12th International Conference on Plasma-Nano Technology & Science (ISPlasma 2019/IC-PLANTS2019), 19P3-35, Nagoya Insitute of Technology, Nagoya, Japan, March 17-21 (2019).
Y. Fujiwara, S. Ichikawa, J. Tatebayashi: [Invited Talk] "New development in red light-emitting diodes (LEDs) using Eu-doped GaN for monolithic micro-LED displays"
2019 Internional Conference on display technology (ICDT2019), 16.3, Kunshan, Suzhou, China, March 26-29 (2019).
Y. Fujiwara, T. Inaba, K. Shiomi, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics; manipulation of Eu luminescence in Eu-doped GaN by control of photon fields"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-LDC-JS-2-01, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
Y. Sasaki, T. Inaba, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Manipulation of Eu luminescence in GaN:Eu-based microdisks"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-4-02, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa, and R. Katayama: [Invited Talk] "First demonstration of GaN monolithic doubly-resonant microcavity SHG device on Si pedestal structure"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-7-01, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
Y. Morioka, S. Yamaguchi, K. Shojiki, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, M. Uemukai, and R. Katayama: "Development Focusing grating coupler for AlN deep UV waveguide SHG device"
7th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2019), LEDIA-8-02, Pacifico Yokohama, Yokohama, Japan, April 23-25 (2019).
M. Ogawa, T. Kishina, R. Higashi, M. Fujita, S. Noda, J. Tatebayashi, and Y. Fujiwara: "Numerical analysis of luminescence enhancement in L3-type photonic crystal nanocavities with Er,O-codoped GaAs"
International Conference on Nano-photonics and Nano-optoelectronics (ICNN2019), ICNN-4-05, Pacifico Yokohama, Yokohama, Japan, April 24-26 (2019).
S. Yamada, Y. Goto, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and K. Hamaya: "High-quality epitaxial growth of half-metallic Co2FeSi films on a Co-terminated GaN (0001) surface"
Compound Semiconductor Week 2019 (CSW2019), TuP-A-5, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, S. Ichikawa, J. Tatebayashi, V. Dierolf, and Y. Fujiwara: "Picosecond time-resolved excitation dynamics and emission manipulation of Eu3+ ions doped in GaN"
Compound Semiconductor Week 2019 (CSW2019), TuP-G-11, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
J. Tatebayashi, T. Nakajima, M. Mishina, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Control of the energy transfer between Tm3+ and Yb3+ ions in ZnO nanowires for photovoltaic applications"
Compound Semiconductor Week 2019 (CSW2019), WeC2-5, Nara Kasugano International Forum (IRAKA), Nara, Japan, May 19-23 (2019).
Y. Fujiwara, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics"
Collaborative Conference on Materials Research 2019 (CCMR2019), KINTEX, Gyeonggi Goyang, Seoul, Korea, June 2-7 (2019).
Y. Fujiwara, K. Shiomi, Y. Sasaki, T. Inaba, S. Ichikawa, J. Tatebayashi: [Invited Talk] "Development of semiconductors intra-center photonics"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), A10.01, Bellevue, USA, July 7-12 (2019).
S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Control of growth kinetics towards enhanced red emissions from strongly excited Eu-doped GaN"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), G09.03, Bellevue, USA, July 7-12 (2019).
S. Yamaguchi., A. Yamauchi., T. Onodera., M. Uemukai., Y. Hayashi., H. Miyake., T. Hikosaka., S. Nunoue., K. Shiomi., Y. Fujiwara, and R. Katayama: "Demonstration of transverse quasi-phase-matched AlN waveguide SHG device fabricated by surface-activated bonding and silicon removal"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), D01.06, Bellevue, USA, July 7-12 (2019).
M. Uemukai, T. Nambu, T. Nagata, T. Hikosaka, S. Nunoue, K. Shiomi, Y. Fujiwara, K. Ohnishi, T. Tanikawa, and R. Katayama: "Demonstration of GaN monolithic doubly-resonant microcavity SHG device"
13th International Conference on Nitride Semiconductors 2019 (ICNS-13), M01.02, Bellevue, USA, July 7-12 (2019).
R. Wei, B. Mitchell, D. Timmerman, T. Gregorkiewicz, W. Zhu, J. Tatebayashi, S. Ichikawa, Y. Fujiwara, and V. Dierolf: "Incorporation Site Dependent Excitation Dynamics of Eu3+ ions in Eu-doped GaN"
30th International Conference on Defects in Semiconductors (ICDS-30), FrAII-4, Seattle, USA, July 21-26 (2019).
B. Mitchell, R. Wei, D. Timmerman, T. Gregorkiewicz, Y. Fujiwara, and V. Dierolf: "Color-tunablility in Eu doped GaN LEDs based on atomic emission manipulation under current injection"
30th International Conference on Defects in Semiconductors (ICDS-30), PII-7, Seattle, USA, July 21-26 (2019).
J. Tatebayashi, R. Higashi, M. Ogawa, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Observation of strongly enhanced Er-related luminescence coupled with cavity modes in Er,O-codoped GaAs microdisks"
30th International Conference on Defects in Semiconductors (ICDS-30), PII-18, Seattle, USA, July 21-26 (2019).
J. Tatebayashi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: [Invited Talk] "Enhancement of Eu luminescence in GaN:Eu via introduction of nanostructures and nanocavities"
Asia Pacific Society for Materials Research 2019 (APSMR2019) Annual Meeting, Hokkaido, Japan, July 26-29 (2019).
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] "Manipulation of Eu emission from GaN using control of photon fields"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
J. Tatebayashi, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Localized surface-plasmon-enhanced GaN:Eu-based red light-emitting diodes with silver nanoparticles"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
D. Timmerman, E. Matsubara, L. Gomez, T. Gregorkiewicz, M. Ashida, and Y. Fujiwara: "Direct determination of multiple exciton generation rate"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
M.Uemukai, S. Yamaguchi, A. Yamauchi, D. Tazuke, A. Higuchi, R. Tanabe, T. Tanikawa, T. Hikosaka, S. Nunoue, Y. Hayashi, H. Miyake, Y. Fujiwara, and R. Katayama: "InGaN laser pumped nitride semiconductor transverse quasi-phase-matched waveguide second harmonic generation devices"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
Y. Morioka, M. Uemukai, T. Tanikawa, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara, and R. Katayama: "Input focusing grating coupler for AlN deep UV waveguide SHG device"
7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconducto Nanostructures, Kobe, Japan, September 24-27 (2019).
Y. Fujiwara, S. Ichikawa, D. Timmerman, D. Lebrun, and J. Tatebayashi: [Invited Talk] "Manipulation of Eu emission from GaN by control of photon fields toward micro-LED display"
4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019), Hanoi, Vietnam, October 13-16 (2019).
D. Timmerman, E. Matsubara, L. Gomez, T. Gregorkiewicz, M. Ashida, and Y. Fujiwara: [Invited Talk] "Excitation dynamics and efficiency of luminescence of Eu in GaN"
4th International Conference on Advanced Materials and Nanotechnology (ICAMN 2019), Hanoi, Vietnam, October 13-16 (2019).