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Atomic-scale
observation of interfacial roughness and As-P exchange in InGaAs/InP multiple
quantum well 2004.5
希土類元素発光中心の形成と光デバイスへの展開―結晶成長による原子配置の制御とデバイス作製― 2004.4
希土類添加V-X族半導体による電流注入型発光デバイス
2004.2
Composition dependence of energy structure and lattice structure
in InGaAs/GaP 2004.1
Room-temperature electroluminescence properties of Er,O-codoped
GaAs injection-type light emitting diodes grown by organometallic vapor phase
epitaxy 2003.12
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