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FUJIWARA Yasufumi

Background

1981.3

Bachelor of Engineering, Faculty of Engineering Science, Osaka University

1983.3

Master of Engineering, Graduate School of Engineering Science, Osaka University

1986.9

Doctor of Engineering, Graduate School of Engineering Science, Osaka University

1985.8-1991.1

Assistant Professor, Osaka University

1991.1-1993.3

Lecturer, Osaka University

1993.4-1997.3

Associate Professor, Faculty of Engineering, Nagoya University

1995.11-1996.1

Visiting Associate Professor, The University of Illinois at Urbana-Champaign

1997.4-2003.6

Associate Professor, Graduate School of Engineering, Nagoya University

2003.7-

Professor, Graduate School of Engineering, Osaka University

2003.7-2004.3

Part-time Lecturer, Graduate School of Engineering, Nagoya University

2006.4-2008.3

Visiting Professor, Tokyo University of Science

2006.4-2006.9

Part-time Lecturer, Department of Arts and Science, Osaka Kyoiku University

2007.4-2007.9

Part-time Lecturer, Department of Arts and Science, Osaka Kyoiku University

2007.10-2008.3

Part-time Lecturer, Graduate School of Engineering, Kyoto University

Research Keywords

Electronic materials, crystal growth, solid state physics

Research Themes

Bottom-up controlled synthesis and device applications of new quantum materials, Atomically-controlled growth and light-emitting device applications of rare-earth doped semiconductors, Characterization of optical, magnetic and transport properties of rare-earth doped semiconductors, Atomically-controlled growth and characterization of semiconductor quantum structures, plasma-enhanced chemical vapor deposition and device applications of functional oxides thin films, Atomically-controlled growth and device applications of silicide semiconductors

Academic Societies

The Japan Society of Applied Physics, The Japan Institute of Metals, The Society of Materials Science, Japan

Awards

2008.12

Young Researcher Award, The IUMRS International Conference in Asia 2008

2005.12

Certificate of Award for Encouragement of Research Society of Japan, 16th Symposium of Materials Research Society of Japan

2005.3

Best Award for Organization of Fusion Research for VBL Information and System Project, Osaka University

2004.3

Excellence Award for Koto Business Competition in Himeji, The Himeji Chamber of Commerce and Industry

2002.3

Academic Prize, The NAGAI Foundation for Science and Technology

1981.3

Kusumoto Award, Osaka University

Current Publications

Influence of plasma gases on insulating properties of low-temperature deposited SiOCH films by remote plasma-enhanced chemical vapor deposition, K. Yamaoka, N. Okada, Y. Yoshizako, Y. Terai and Y. Fujiwara, Japanese Journal of Applied Physics 46(4B) (2007) pp. 1997-2000., 2007.4

Magnetic properties of Er,O-codoped GaAs at low temperature, S. Takemoto, T. Terao, Y. Terai, M. Yoshida, A. Koizumi, H. Ohta, Y. Takeda, N. Fujimura and Y. Fujiwara, Physica Status Solidi (c) 3(12) (2006) pp. 4082-4085, 2007.1

Growth of bulk β-FeSi₂ crystals by annealing of well aligned solidification structures, A. Mishina, T. Akahori, Y. Terai, I. Yamauchi and Y. Fujiwara, Physica B 376-377 (2006) pp. 795-798, 2006.12

Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs, K. Nakamura, S. Takemoto, Y. Terai, M. Suzuki, A. Koizumi, Y. Takeda, M. Tonouchi and Y. Fujiwara, Physica B 376-377 (2006) pp. 556-559, 2006.12

Room-temperature operation of injection-type 1.5 μm light-emitting diodes with Er,O-codoped GaAs, Y. Fujiwara, Materials Transactions 46(9) (2005) pp. 1969-1974, 2005.9