J. Takatsu, B. Mitchell, A. Koizumi, S. Yamanaka, M. Matsuda, T. Gregorkiewicz, T. Kojima, and Y. Fujiwara: "Detection of In segregation in InGaN by using Eu as a probe"
Journal of Crystal Growth 468 (2017) pp. 831-834. https://doi.org/10.1016/j.jcrysgro.2016.12.101
R. Fuji, B. Mitchell, A. Koizumi, T. Inaba, and Y. Fujiwara: "Surface morphology and optical properties of Eu3+ ions incorporated into N-polar GaN grown by organometallic vapor phase epitaxy,"
Journal of Crystal Growth 468 (2017) pp. 862-865. https://doi.org/10.1016/j.jcrysgro.2017.01.015
T. Inaba, B. Mitchell, A. Koizumi, and Y. Fujiwara: "Emission enhancement and its mechanism of Eu-doped GaN by strain engineering,"
Optical Materials Express 7 (2017) pp. 1381-1387. https://doi.org/10.1364/OME.7.001381
W. Zhu, B. Mitchell, D. Timmerman, A. Koizumi, T. Gregorkiewicz, and Y. Fujiwara: "High-power Eu-doped GaN red LED based on a multilayer structure grown at lower temperatures by organometallic vapor phase epitaxy,"
MRS Advances 2 (2017) pp. 159-164. https://doi.org/10.1557/adv.2017.67
E. Jong, G. Yamashita, L. Gomez, M. Ashida, Y. Fujiwara, and T. Gregorkiewicz: "Multiexciton lifetime in All-inorganic CsPbBr3 perovskite nanocrystals,"
The Journal of Physical Chemistry C 121 (2017) pp. 1941-1947. http://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b10551
B. Mitchell, A. Koizumi, T. Nunokawa, Y. Kuboshima, T. Mogi, S. Higashi, K. Kikukawa, H. Ofuchi, T. Honma, and Y. Fujiwara: "Synthesis and characterization of a novel liquid Eu precursor EuCppm2 allowing for the control of the Eu oxidation state ratio in GaN thin films grown by OMVPE,"
Materials Chemistry and Physics 193 (2017) pp. 140-146. https://doi.org/10.1016/j.matchemphys.2017.02.021
C. de Weerd, L. Gomez, J. Lin, Y. Fujiwara, K. Suenaga, and T. Gregorkiewicz: "Hybridization of single nanocrystals of Cs4PbBr6 and CsPbBr3,"
The Journal of Physical Chemistry C 121 (2017) pp. 19490-19496. http://pubs.acs.org/doi/ipdf/10.1021/acs.jpcc.7b05752
I. E. Fragkos, C.-K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu: "Pathway towards high-efficiency Eu-doped GaN light-emitting diodes,"
Scientific Reports 7 (2017) pp. 14648/1-13. https://www.nature.com/articles/s41598-017-15302-y.pdf
I. E. Fragkos, C.-K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu: "Physics of efficiency droop in GaN:Eu light-emitting diodes,"
Scientific Reports 7 (2017) pp. 16773/1-12. http://www.nature.com/articles/s41598-017-17033-6.pdf
I. I. Fragkos, C. K. Tan, Y. Zhong, V. Dierolf, Y. Fujiwara, and N. Tansu: "On the identification and understanding of limiting factors in IQE of GaN:Eu based PIN diodes for red light emission"
SPIE Photonics West 2017, Physics and Simulation of Optoelectronic Devices XXV, 10098-5, San Francisco, USA, January 30-February 2 (2017).
I. Fragkos, Y. Zhong, C. K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu: "Enhancement of internal quantum efficiency of GaN:Eu based red light emitters through surface plasmon engineering"
SPIE Photonics West 2017, Physics and Simulation of Optoelectronic Devices XXV, 10124-22, San Francisco, USA, January 30-February 2 (2017).
Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell1, T. Kojima, and T. Gregorkiewicz: [Invited Talk] "Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN"
Workshop on Frontier Photonic and Electronic Materials and Devices 2017, German-Japanese-Spanish Joint Workshop, Mo-14, Hotel Punta Rotja, Mallorca, Spain, March 5-8 (2017).
Y. Fujiwara: [Invited Talk] "Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN"
2017 International Advanced Laser Application Summit Forum, Shenzhen University, Shenzhen, China, May 21-22 (2017).
B. Mitchell, V. Dierolf, and Y. Fujiwara: [Invited Talk] "Toward GaN-Based Red LEDs: The Influence of Local and Extended Defect Environments on the Optical and Material Properties of GaN:Eu"
231st ECS Meeting, H01-1283, New Orleans, USA, May 28-June 2 (2017).
J. Takatsu and Y. Fujiwara: "Effects of defect environment on the emission from Eu3+ ions in InGaN"
Interdisciplinary Symposium for Up-and coming Material Scientists: Global Challenges to Attaining a Sustaionable Future, P66, Osaka University Hall, Osaka, Japan, June 8-9 (2017).
M. Ogawa, N. Fujioka, K. Sakuragi, T. Kishina, T. Kojima, and Y. Fujiwara: "High-Q photonic crystal double-heterostructure nanocavity with Er,O-codoped GaAs"
Interdisciplinary Symposium for Up-and coming Material Scientists: Global Challenges to Attaining a Sustaionable Future, P71, Osaka University Hall, Osaka, Japan, June 8-9 (2017).
Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Kojima, and T. Gregorkiewicz: [Invited talk] "Challenge to highly efficient wavelength-stable red light-emitting diodes using Eu-doped GaN"
12th International Conference on Nitride Semiconductors, B.4.1, Strausbourg, France, July 24-28 (2017).
J. Takatsu, R. Fuji, and Y. Fujiwara: "Photoluminescence properties and surface morphologies of Tm-doped GaN grown by organometallic vapor phase epitaxy"
29th International Conference on Defects in Semiconductors, TuP-63, Matsue, Japan, July 31-August 4 (2017).
T. Inaba, T. Kojima, G Yamashita, M. Ashida, and Y. Fujiwara: "Quantitative evaluation of energy transfer efficiency for Eu-doped GaN grown at different V/III ratios"
29th International Conference on Defects in Semiconductors, TuP-64, Matsue, Japan, July 31-August 4 (2017).
M. Ishii, T. Inaba, and Y. Fujiwara: "Repeated emission of Eu by multi-path energy transfer from defects in GaN:Eu red LED"
29th International Conference on Defects in Semiconductors, TuP-77, Matsue, Japan, July 31-August 4 (2017).
W. Zhu, R. Wei, B. Mitchell, Y. Fujiwara, and V. Dierolf: "Behavior of Eu ions in GaN under intense excitation conditions"
29th International Conference on Defects in Semiconductors, ThB3-1, Matsue, Japan, July 31-August 4 (2017).
W. Zhu, B. Mitchell, J. Poplawsky, D. Timmerman, T. Gregorkiewicz, and Y. Fujiwara: "Reduction of threading dislocations related surface pits by GaN/Eu-doped GaN multi-layer structure and its contribution to GaN:Eu RED LED performance"
29th International Conference on Defects in Semiconductors, ThB3-2, Matsue, Japan, July 31-August 4 (2017).
T. Yamada, T. Inaba, T. Kojima, and Y. Fujiwara: "Enhancement of Eu emission in Eu-doped GaN red LED by localized surface plasmon"
29th International Conference on Defects in Semiconductors, ThB3-3, Matsue, Japan, July 31-August 4 (2017).
G. Yoshii, H. Kamei, T. Nakajima, and Y. Fujiwara: "Emission via resonantly excited Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition,"
29th International Conference on Defects in Semiconductors, ThP-65, Matsue, Japan, July 31-August 4 (2017).
J.Tatebayashi, H. Kogame, T. Kojima, and Y. Fujiwara: "Energy transfer processes in Eu-doped GaN by two-wavelength excited photoluminescence measurements,"
8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), PT37, Qingdao, China, September 24-27 (2017).
Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Gregorkiewicz, and J. Tatebayashi: [Invited talk] "New development of Eu-doped GaN narrow-band red light-emitting diodes,"
6th International Workshop on Epitaxial Growth and Fundmental Properties of Semiconductor Nanostructures, Como, Italy, September 25-28 (2017).
Y. Fujiwara, T. Inaba, W. Zhu, B. Mitchell, T. Gregorkiewicz, and J. Tatebayashi: [Invited talk] "Intrinsic and extrinsic control of Eu luminescence in GaN for highly efficient wavelength-stable narrow-band red light-emitting diodes,"
Satellite Workshop of Kanamori Memorial Symposium - Recent Progress in Materials Science for Spintronics and Energy Applications-, Osaka University, Osaka, October 2-3 (2017).
T. Inaba, K. Shiomi, T. Kojima, and Y. Fujiwara: "Enhanced light output from Eu-doped GaN red LED by a microcavity,"
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017), TP9, Banff, Canada, October 8-12 (2017).
W. Zhu, R. Wei, D. Timmerman, T. Gregorkiewicz, B. Mitchell, V. Dierolf, and Y. Fujiwara: "Color tunablility of Eu-Doped GaN LEDs achieved through a re-excitation driven up-conversion process,"
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017), TP10, Banff, Canada, October 8-12 (2017).
Y. Fujiwara: [Invited talk] "New development of narrow-band red LEDs using Eu-doped GaN - Intrinsic control and extrinsic control -,"
International Thin Films Conference (TACT2017), C-I-0630, National Dong Hwa University, Hualien, Taiwan, October 15-18 (2017).
K. Shiojima, T. Shigemune, A. Koizumi, T. Kojima, Y. Kashiwagi, M. Saitoh,
T. Hasegawa, M. Chigane, and Y. Fujiwara: "Effect of surface treatment in printed Ag Schottky contacts on n-GaN epitaxial layers by using Ag nanoink,
Advanced Metallization Conference 2017, 27th Asian Session, 7-4, The University of Tokyo, Japan, October 19-20 (2017)
Y. Fujiwara: [Invited talk] "Towards highly efficient GaN-based red light-emitting diodes,"
AEARU Advanced Materials Science Workshop 2017, Osaka University, Osaka, Japan, November 1 (2017).