T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Enhanced light output of Eu, O-codoped GaN caused by reconfiguration of luminescent sites during post-growth thermal annealing,"
Applied Physics Letters 122 (2023) pp. 032102/1-5. https://doi.org/10.1063/5.0136880
T. Otabara, J. Tatebayashi, T. Yoshimura, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective-area organometallic vapor phase epitaxy,"
Japanese Journal of Applied Physics 62 (2023) pp. SG1018/1-6.
S. Suzuki, M. Matsubara, H. Minamiyama, M. Dhamrin, Y. Fujiwara, and Y. Uraoka: "In-situ X-ray diffraction analysis of SiGe liquid phase growth on Si using Al-Ge paste,"
Materials Chemistry and Physics 301 (2023) pp. 127639/1-9. https://doi.org/10.1016/j.matchemphys.2023.127639
S. Yamada, M. Kato, S. Ichikawa, M. Yamada, T. Naito, Y. Fujiwara, and K. Hamaya: "Half-metallic Heusler alloy/GaN heterostructure for semiconductor spintronics devices,"
Adanced Electronic Materials 9 (2023) 2300045/1-9. https://doi.org/10.1002/aelm.202300045
H. Honda, S. Umeda, K. Shojiki, H. Miyake, S. Ichikawa, J. Tatebayashi, Y. Fujiwara, K. Serita, H. Murakami, M. Tonouchi, M. Uemukai, T. Tanikawa, R. Katayama: "229 nm far-ultraviolet second harmonic generation in vertically polarity inverted AlN bilayer channel waveguide,"
Applied Physics Express 16 (2023) pp. 062006/1-4. https://iopscience.iop.org/article/10.35848/1882-0786/acda79
T. Nambu, T. Nakahara, Y. Yasuda, Y. Fujiwara, M. Tonouchi, M. Uemukai, T. Tanikawa, and R. Katayama: "Second harmonic generation from a-plane GaN vertical monolithic microcavity pumped with femtosecond laser,"
Applied Physics Express 16 (2023) pp. 072005/1-6. https://iopscience.iop.org/article/10.35848/1882-0786/ace242
J. Tatebayashi, K. Nishimura, S. Ichikawa, S. Yamada, Y. Nakajima, K. Sato, K. Hamaya, and Y. Fujiwara: "Red electroluminescence from light emitting diodes based on Eu-doped ZnO embedded in p-GaN/Al2O3/n-ZnO heterostructures,"
ECS Journal of Solid State Science and Technology 12 (2023) pp. 076017/1-9. https://iopscience.iop.org/article/10.1149/2162-8777/ace655
T. Taniguchi, D. Timmerman, S. Ichikawa, J. Tatebayashi, and Y. Fujiwara: "Electrically driven europium doped GaN microdisk,"
Optics Letters 48 (2023) pp. 4590-4592. https://doi.org/10.1364/OL.494616
J. Tatebayashi, T. Otabara, T. Yoshimura, R. Hada, R. Yoshida, S. Ichikawa, and Y. Fujiwara: "Formation and optical characteristics of GaN:Eu/GaN nanowires for applications in light-emitting diodes,"
ECS Journal of Solid State Science and Technology 12 (2023) pp. 096003/1-10. https://iopscience.iop.org/article/10.1149/2162-8777/acf6ff
Z. Fang, J. Tatebayashi, R. Homi, M. Ogawa, H. Kajii, M. Kondow, K. Kitamura, B. Mitchell, S. Ichikawa, and Y. Fujiwara: "Enhancement of Er luminescence from bridge-type photonic crystal nanocavities with Er, O-codoped GaAs,"
Optics Continuum 2 (2023) pp. pp. 2178-2185. https://doi.org/10.1364/OPTCON.501666
F. Murakami, A. Takeo, B. Mitchell, V. Dierolf, Y. Fujiwara, and M. Tonouchi: "Enhanced optoelectronic devices based on dilute rare-earth-doped superlattice structures revealed through terahertz emission spectroscopy,"
Communications Materials 4 (2023) pp. 100/1-10. https://www.nature.com/articles/s43246-023-00428-6
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Towards ultrahigh-resolution micro-LED displays using a monolithic vertically stacked full-color LED,"
SPIE Photonics West 2020, 12421-62, Moscone Center, San Francisco, USA, January 30-February 2 (2023).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Monolithic Vertically Stacked RGB LEDs for Small Micro-LED Displays with Ultrahigh Definition,"
2023 International Conference on Electronics Packaging (ICEP2023), TE1-2, Civic Auditorium Sears Home Yume Hall, Kumamoto, Japan, April 19-22 (2023).
Z. Fang, J. Tatebayashi, H. Kajii, S. Ji, S. Iwamoto, M. Kondow, and Y. Fujiwara: "Enhanced vertical light extraction in nanobeam photonic crystal nanocavities based on Er,O-codoped GaAs,"
International Conference on Nano-photonics and Nano-optoelectronics 2023 (ICNN2023), ICNN2-04, Pacifico Yokohama Conference Center, Yokohama, Japan, April 19-21 (2023).
J. Tatebayashi, T. Otabara, T. Yoshimura, D. Timmerman, S. Ichikawa, and Y. Fujiwara: "Demonstration of GaN:Eu/GaN nanowire light emitting diodes grown by selective metalorganic vapor phase epitaxy,"
International Conference on Nano-photonics and Nano-optoelectronics 2023 (ICNN2023), ICNN5-03, Pacifico Yokohama Conference Center, Yokohama, Japan, April 19-21 (2023).
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "III-Nitride-based high-Q (> 10000) two-dimensional photonic crystal nanocavities in the red region,"
International Conference on Nano-photonics and Nano-optoelectronics 2023 (ICNN2023), ICNN6-05, Pacifico Yokohama Conference Center, Yokohama, Japan, April 19-21 (2023).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Towards small, ultrahigh-definition micro-LED displays using monolithic vertically stacked RGB LEDs,"
SID' Display Week Symposium, 37-4, Los Angeles Convention Center, Los Angels, USA, May 21-25 (2023).
Y. Fujiwara, S. Ichikawa, D. Timmerman, and J. Tatebayashi:[Invited talk] "Eu-doped GaN red LEDs as a key component for micro-LED displays with ultrahigh resolution,"
International Conference on Processing & Manufacturing of Advanced Materials: Processing, Fabrication, Properties, Applications (Thermec2023), Vienna, Austria, July 2-7 (2023).
Y. Fujiwara:[Plenary talk] "Semiconductors intra-center photonics,"
3rd International Conference on Dielectric Photonic Devices and Systems Beyond Visible (D-Photon2023), Bari, Italy, July 13-15 (2023).
Y. Fujiwara:[Featured Invited talk] "Full-color LEDs on one chip as a key technology to realize small, ultrahigh-definition micro-LED displays,"
23rd International Meeting on Information Display (IMID2023), E13-1, BEXCO, Busan, Korea, August 22-25 (2023).
H. Austin, B. Mitchell, F. Murakami, J. Tatebayashi, M. Tonouchi, Y. Fujiwara, and V. Dierolf: "Carrier Confinement for Improved Color Tunability of Eu-doped GaN LEDs,"
32nd International Conference on Defects in Semiconductors (ICDS-23), TuP-3, Rehoboth Beach, Delaware, USA, September 10-15 (2023).
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Enhanced light output of Eu,O-codoped GaN caused by luminescent site reconfiguration during post-growth thermal annealing,"
32nd International Conference on Defects in Semiconductors (ICDS-23), Rehoboth Beach, Delaware, USA, September 10-15 (2023).
F. Murakami1 A. Takeo, B. Mitchell, V. Dierolf, Y. Fujiwara, and M. Tonouchi: "Ultrafast carrier dynamics in GaN:Eu LED structures studied by terahertz emission spectroscopy,"
32nd International Conference on Defects in Semiconductors (ICDS-23), Rehoboth Beach, Delaware, USA, September 10-15 (2023).
T. Ishihara, S. Ichikawa, G. Tanaka, K. Miyanaga, T. Uemura, N. Kanzaki, J. Tatebayashi, and Y. Fujiwara: "Monolithic integration of small blue and red LEDs for next-generation micro-LED displays with ultrahigh definition,"
14th International Conference on Nitride Semiconductors (ICDS-14), OD2-4, Hilton Fukuoka Sea Hawk, Fukuoka, Japan. November 12-17 (2023).
Y. Murata, S. Ichikawa, S. Toda, Y. Fujiwara, and K. Kojima: "Design of highly efficient InGaN-based circularly polarized LEDs integrated with Si3N4 metasurface,"
14th International Conference on Nitride Semiconductors (ICDS-14), LN2-6, Hilton Fukuoka Sea Hawk, Fukuoka, Japan. November 12-17 (2023).
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Enhanced luminous efficiency of Eu,O-codoped GaN due to luminescent site reconfiguration induced by high-temperature thermal annealing,"
14th International Conference on Nitride Semiconductors (ICDS-14), CH16-4, Hilton Fukuoka Sea Hawk, Fukuoka, Japan. November 12-17 (2023).
K. Nishimura, J. Tatebayashi, S. Ichikawa, S. Yamada, Y. Nakajima, K. Sato, K. Hamaya, and Y. Fujiwara: "Red electroluminescence from Eu-doped ZnO in p-GaN/Al2O3/n-ZnO heterostructure,"
14th International Conference on Nitride Semiconductors (ICDS-14), MoP-GR-47, Hilton Fukuoka Sea Hawk, Fukuoka, Japan. November 12-17 (2023).
T. Iwaya, S. Ichikawa, D. Timmerman, J. Tatebayashi, and Y. Fujiwara: "Eu,O-codoped GaN-based high-Q two-dimensional photonic crystal cavities in the red region,"
2023 MRS Fall Meeting, Symposium “Emerging Material Platforms and Fundamental Approaches for Plasmonics, Nanophotonics and Metasurfaces”, EL08.03.04, Boston, Massachusetts, USA, November 26-December 1 (2023).
K. Yamada, J. Tatebayashi, K. Nishimura, S. Ichikawa, S. Yamada, Y. Nakajima, K. Sato, K. Hamaya, and Y. Fujiwara: "Red electroluminescence from Eu-doped ZnO embedded in p-GaN/Al2O3/n-ZnO heterostructures,"
42nd Electronic Materials Symposium, Th1-18、The Kashihara、奈良県橿原市、10月11-13日 (2023).
S. Yamazaki, S. Ichikawa, T. Iwaya, J. Tatebayashi, and Y. Fujiwara: "Demonstration of Tb-doped AlGaN-based visible light-emitting diodes with high emission wavelength stability,"
42nd Electronic Materials Symposium, Th4-3、The Kashihara、奈良県橿原市、10月11-13日 (2023).
Top/研究成果/2023年
