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Dislocation plasticity controlled by electron spin resonance
Roman Morgunov@(Institute of Problem of Chemical Physics, Russia)

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“úŽžF2009”N8ŒŽ21“úi‹àj13:10-14:30
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Experimental results devoted to resonant microwave and static magnetic field effects on plasticity of diamagnetic crystals will be presented. In dielectric and semiconductor crystals spin-dependent interaction between paramagnetic dopant ions and its sensitivity to magnetic fields will be considered. Short intermidiate stages of the defects interaction depend on ions spin orientations and could be controlled by external magnetic field. Plasticity and dislocation mobility in crystals are sensitive indicators of the spin-dependent processes between dopant ions. On the basis of these considerations the new effects will be described: changes of the plasticity in static magnetic field, microwave field magnetoplasticity and isotope effects on mechanical properties.